Volume 70; Issue 21

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Applied Physics Letters
Volume 70; Issue 21

Applied Physics Letters

Volume 70; Issue 21

1

Luminescences from localized states in InGaN epilayers

Chichibu, S., Azuhata, T., Sota, T., Nakamura, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 327 KB

english, 1997

2

Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells

Smith, M., Lin, J. Y., Jiang, H. X., Khan, A., Chen, Q., Salvador, A., Botchkarev, A., Kim, W., Morkoc, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 443 KB

english, 1997

3

Comparison of high field electron transport in GaN and GaAs

Foutz, B. E., Eastman, L. F., Bhapkar, U. V., Shur, M. S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 392 KB

english, 1997

4

Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures

Billeb, A., Grieshaber, W., Stocker, D., Schubert, E. F., Karlicek, R. F.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 415 KB

english, 1997

5

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

Ougazzaden, A., Le Bellego, Y., Rao, E. V. K., Juhel, M., Leprince, L., Patriarche, G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 423 KB

english, 1997

6

Infrared distributed Bragg reflectors based on amorphous SiC/SiO[sub 2] heterostructures

Convertino, A., Valentini, A., Giugno, P. V., Cingolani, R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 348 KB

english, 1997

7

Composition dependence of the ultraviolet absorption edge in lithium niobate

KovaÌcs, L., Ruschhaupt, G., PolgaÌr, K., Corradi, G., WoÌhlecke, M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

8

Observation of bistability in GaAs/AlAs superlattices

Zhang, Yaohui, Klann, Robert, Ploog, Klaus H., Grahn, Holger T.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 154 KB

english, 1997

9

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

Ledentsov, N. N., Bimberg, D., Shernyakov, Yu. M., Kochnev, V., Maximov, M. V., Sakharov, A. V., Krestnikov, I. L., Egorov, A. Yu., Zhukov, A. E., Tsatsul’nikov, A. F.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 378 KB

english, 1997

10

Many-body effects on modulation-doped InAs/GaAs quantum dots

Lee, Joo In, Lee, Hyung Gyoo, Shin, Eun-joo, Yu, Sungkyu, Kim, Dongho, Ihm, Gukhyung

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 341 KB

english, 1997

11

Thermoelectric transport in quantum well superlattices

Broido, D. A., Reinecke, T. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 345 KB

english, 1997

12

Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms

Aziz, Michael J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 336 KB

english, 1997

13

Franz–Keldysh effect in lateral GaAs/AlGaAs based npn structures

Baumgartner, P., Engel, C., Böhm, G., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

14

Anisotropic magnetic coupling of permalloy micron dots forming a square lattice

C. Mathieu, C. Hartmann, M. Bauer, O. Buettner, S. Riedling, B. Roos, S. O. Demokritov, B. Hillebrands, B. Bartenlian, C. Chappert, D. Decanini, F. Rousseaux, E. Cambril, A. MuÌller, B. Hoffmann, U.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 419 KB

english, 1997

15

A mechanism of the exchange anisotropy in Co[sub 1−x]Mn[sub x]/Mn bilayers: Interfacial influences

Zhao, H. W., Lu, M., Sui, Y. X., Zhai, H. R., Feng, Duan, Chen, Y., Dong, G. S., Jin, X. F.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 362 KB

english, 1997

16

Colossal magnetoresistance in epitaxial La[sub (1−x−y)]Na[sub y]MnO[sub 3] thin film

Sahana, M., Singh, R. N., Shivakumara, C., Vasanthacharya, N. Y., Hegde, M. S., Subramanian, S., Prasad, V., Subramanyam, S. V.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 351 KB

english, 1997

17

In situ monitoring of molecular beam epitaxy using specularly scattered ion beam current oscillations

Labanda, J. G. C., Barnett, S. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 324 KB

english, 1997

18

Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength

Debray, J. P., Lugagne-Delpon, E., Le Roux, G., Oudar, J. L., Quillec, M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1001 KB

english, 1997

19

The formation of nanostructures on silicon surfaces in the presence of hydrogen

Teschke, O., Soares, D. M., Nunes, L. A. O.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 495 KB

english, 1997

20

Origin of direct current drift in electro-optic polymer modulator

Park, Heuk, Hwang, Wol-Yon, Kim, Jang-Joo

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 362 KB

english, 1997

21

Biaxially aligned buffer layers of cerium oxide, yttria stabilized zirconia, and their bilayers

Gnanarajan, S., Katsaros, A., Savvides, N.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 370 KB

english, 1997

22

A broadband antireflection coating for enhanced holographic recording and readout in bismuth silicon oxide

Karim, Z., Kyriakakis, C., Tanguay, A. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

23

Noise-free avalanche multiplication in Si solid state photomultipliers

Kim, Jungsang, Yamamoto, Yoshihisa, Hogue, Henry H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 358 KB

english, 1997

24

Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode

Allard, L. B., Liu, H. C., Buchanan, M., Wasilewski, Z. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

25

Stress release at Y[sub 2]BaCuO[sub 5] inclusions in fast melt processed YBa[sub 2]Cu[sub 3]O[sub 7−x] observed by micro-Raman spectroscopy

Provoost, R., Rosseel, K., Moshchalkov, V. V., Silverans, R. E., Bruynseraede, Y., Dierickx, D., Van der Biest, O.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

26

Flux pinning by collective stacking faults in Y[sub 0.6]Ho[sub 0.4]Ba[sub 2]Cu[sub 3]O[sub y] prepared by powder melting process

Feng, Yong, Wen, J. G., Koshizuka, N., Zhou, Lian

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 583 KB

english, 1997

27

Dielectric-base transistors with doped channel

Hato, Tsunehiro, Yoshida, Akira, Yoshida, Chikako, Suzuki, Hideo, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1.30 MB

english, 1997

28

Dislocation blocking in In[sub x]Ga[sub 1−x]As (x

MacPherson, G., Goodhew, P. J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 494 KB

english, 1997

29

High peak-current-density strained-layer In[sub 0.3]Ga[sub 0.7]As/Al[sub 0.8]Ga[sub 0.2]As resonant tunneling diodes grown by metal-organic chemical vapor deposition

Mirabedini, Ali R., Mawst, Luke J., Botez, Dan, Marsland, Robert A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 441 KB

english, 1997

30

Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films

Fujita, Ken, Watanabe, Heiji, Ichikawa, Masakazu

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 528 KB

english, 1997

31

Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy

Liu, Kun, Zhang, Bo, Wan, Mingfang, Chu, J. H., Johnston, C., Roth, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

32

Modification of the second-order optical nonlinearities in AlGaAs asymmetric multiple quantum well waveguides by quantum well intermixing

Street, M. W., Whitbread, N. D., Hamilton, C. J., Vögele, B., Stanley, C. R., Hutchings, D. C., Marsh, J. H., Aitchison, J. S., Kennedy, G. T., Sibbett, W.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 263 KB

english, 1997

33

Dual Hall effects in inhomogeneous doubly connected GaAs/AlGaAs heterostructure devices

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 280 KB

english, 1997

34

Effects of in situ doping from B[sub 2]H[sub 6] and PH[sub 3] on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition

Doris, B., Fretwell, J., Erskine, J. L., Banerjee, S. K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 484 KB

english, 1997

35

Exchange induced unidirectional anisotropy observed using Cr–Al antiferromagnetic films

Klemmer, T. J., Inturi, V. R., Minor, M. K., Barnard, J. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 288 KB

english, 1997

36

Grain boundary evolution of YBa[sub 2]Cu[sub 3]O[sub 7−δ] in the vicinity of steps on patterned (001) LaAlO[sub 3] substrates

Gustafsson, M., Olsson, E., Yi, H. R., Winkler, D., Claeson, T.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 559 KB

english, 1997

37

Relaxed Si[sub 1−x]Ge[sub x]/Si[sub 1−x−y]Ge[sub x]C[sub y] buffer structures with low threading dislocation density

Osten, H. J., Bugiel, E.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 503 KB

english, 1997

38

The effects of high pressure on carbon nitride—in situ measurements of micro photoluminescence and infrared spectra

Zhao, J., Che, R. Z., Xu, J. R., Kang, N.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 268 KB

english, 1997

39

Real space transfer in a velocity modulated transistor structure

Cohen, E. B., Webb, K. J., Janes, D. B., Melloch, M. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 279 KB

english, 1997

40

Enhanced electroabsorption in tensile-strained Ga[sub y]In[sub 1−y]As/Al[sub x]In[sub 1−x]As/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

Schwander, T., Anhegger, M., Bürger, N., Feifel, T., Hirche, K., Korn, M., Panzlaff, K., Schröter, S., Warth, M., König, P., Hangleiter, A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

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