Volume 70; Issue 25

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Applied Physics Letters
Volume 70; Issue 25

Applied Physics Letters

Volume 70; Issue 25

1

Absolute photoyield from chemical vapor-deposited diamond and diamond-like carbon films in the UV

Breskin, A., Chechik, R., Shefer, E., Bacon, D., Avigal, Y., Kalish, R., Lifshitz, Y.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 297 KB

english, 1997

2

Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure

Cao, N., Elenkrig, B. B., Simmons, J. G., Thompson, D. A., Puetz, N.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 397 KB

english, 1997

3

Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism

Chou, Anthony I., Lai, Kafai, Kumar, Kiran, Chowdhury, Prasenjit, Lee, Jack C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 380 KB

english, 1997

4

Studies of Mn valence conversion and oxygen vacancies in La1-xCaxMnO3-y using electron energy-loss spectroscopy

Wang, Z. L., Yin, J. S., Jiang, Y. D., Zhang, Jiming

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 575 KB

english, 1997

5

Ideal anodization of silicon

Yamani, Zain, Thompson, W. Howard, AbuHassan, Laila, Nayfeh, Munir H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 730 KB

english, 1997

6

Stoichiometry and thickness variation of YBa[sub 2]Cu[sub 3]O[sub 7âx] in pulsed laser deposition with a shadow mask

Trajanovic, Z., Choopun, S., Sharma, R. P., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 74 KB

english, 1997

7

Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

Aigouy, Lionel, Holden, Todd, Pollak, Fred H., Ledentsov, N. N., Ustinov, W. M., Kopâev, P. S., Bimberg, D.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 339 KB

english, 1997

8

Interstitial defects in silicon from 1â5 keV Si[sup +] ion implantation

Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 560 KB

english, 1997

9

UrbachâMartienssen tails in a wurtzite GaN epilayer

Chichibu, S., Mizutani, T., Shioda, T., Nakanishi, H., Deguchi, T., Azuhata, T., Sota, T., Nakamura, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 297 KB

english, 1997

10

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Look, D. C., Molnar, R. J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

11

Azimuthal surface gliding of a nematic liquid crystal

Vorflusev, V. P., Kitzerow, H.-S., Chigrinov, V. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

12

Demonstration of 110 GHz electro-optic polymer modulators

Chen, Datong, Fetterman, Harold R., Chen, Antao, Steier, William H., Dalton, Larry R., Wang, Wenshen, Shi, Yongqiang

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 450 KB

english, 1997

13

Tunneling induced transparency: Fano interference in intersubband transitions

Schmidt, H., Campman, K. L., Gossard, A. C., ImamogÌlu, A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 245 KB

english, 1997

14

Pressure and strain sensors based on intervalley electron transfer in AlGaAs

Lee, S. J., Khurgin, J. B., Wang, K. L., Alt, K., Ehrlich, M. J., Wagner, J. W.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 259 KB

english, 1997

15

Self-assembled-monolayer film islands as a self-patterned-mask for SiO[sub 2] thickness measurement with atomic force microscopy

Komeda, T., Namba, K., Nishioka, Y.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 427 KB

english, 1997

16

Multi-wavelength lasing oscillation of a Vernier-type unidirectional Er[sup 3+]-doped fiber compound ring

Zhao, Y., Shu, C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 317 KB

english, 1997

17

5-μm-wide YBa[sub 2]Cu[sub 3]O[sub 7−δ] coplanar line with low transmission loss

Hattori, W., Yoshitake, T., Tahara, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 463 KB

english, 1997

18

The impact of using AlGaAs as a carrier supplying layer in an InAlAs/InGaAs high electron mobility transistor structure on thermal stability

Tanabe, Mitsuru, Kashiwagi, Noboru, Matsuno, Toshinobu, Tamura, Akiyoshi

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

19

Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding

Alexe, Marin, Kästner, Gerhard, Hesse, Dietrich, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 680 KB

english, 1997

20

Influence of Al substitution on the structure and Co-sublattice magnetocrystalline anisotropy of Gd[sub 2]Co[sub 17] compounds

Cheng, Zhao-hua, Shen, Bao-gen, Zhang, Jun-xian, Liang, Bing, Guo, Hui-qun, Kronmüller, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

21

Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes

Nishio, Johji, Sugiura, Lisa, Fujimoto, Hidetoshi, Kokubun, Yoshihiro, Itaya, Kazuhiko

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 554 KB

english, 1997

22

Scanning laser microscopy of reactive ion etching induced n-type conversion in vacancy-doped p-type HgCdTe

Siliquini, J. F., Dell, J. M., Musca, C. A., Faraone, L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 390 KB

english, 1997

23

Effect of surface acoustic waves on low-temperature photoluminescence of GaAs

Zhuravlev, K. S., Petrov, D. V., Bolkhovityanov, Yu. B., Rudaja, N. S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

24

Cobalt doping in BaTiO[sub 3] thin films by two-target pulsed KrF laser ablation with in situ laser annealing

Ito, Atsushi, Machida, Akihiko, Obara, Minoru

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

25

Enhanced electro-optic modulation by integration of nonradiative centers in a resonant tunneling light emitting diode

Alphenaar, B. W., Baumberg, J. J., Köhler, K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 496 KB

english, 1997

26

GaAs based anti-resonant Fabry–Perot saturable absorber fabricated by metal organic vapor phase epitaxy and ion implantation

Lederer, M. J., Luther-Davies, B., Tan, H. H., Jagadish, C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 338 KB

english, 1997

27

Optical switches based on magnesium lanthanide alloy hydrides

van der Sluis, P., Ouwerkerk, M., Duine, P. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 329 KB

english, 1997

28

High-repetition-rate femtosecond optical parametric oscillator based on periodically poled lithium niobate

Burr, Kent C., Tang, C. L., Arbore, Mark A., Fejer, Martin M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 772 KB

english, 1997

29

Single-crystal Si films for thin-film transistor devices

Im, James S., Sposili, Robert S., Crowder, M. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 791 KB

english, 1997

30

Depletion of charge around mesoscopic voids in semiconductors

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

31

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Ni, W.-X., Joelsson, K. B., Du, C.-X., Buyanova, I. A., Pozina, G., Chen,, W. M., Hansson, G. V., Monemar, B., Cardenas, J., Svensson, B. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 276 KB

english, 1997

32

Effect of strain and temperature on anomalously large interdiffusion in InAsP/InP heterostructures

Tweet, D. J., Matsuhata, H., Fons, P., Oyanagi, H., Kamei, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 255 KB

english, 1997

33

Carrier trapping due to Fe[sup 3+]/ Fe[sup 2+] in epitaxial InP

Söderström, D., Marcinkevićius, S., Karlsson, S., Lourdudoss, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 288 KB

english, 1997

34

Identification and optimization of advanced phosphors using combinatorial libraries

Sun, Xiao-Dong, Gao, Chen, Wang, Jingsong, Xiang, X.-D.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 327 KB

english, 1997

35

Measurement of single interface trap capture cross sections with charge pumping

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 262 KB

english, 1997

36

Shock-induced chemical reactions in a Ni/Al powder mixture

Yang, Y., Gould, R. D., Horie, Y., Iyer, K. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 243 KB

english, 1997

37

Band offsets in Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions measured by admittance spectroscopy

Stein, B. L., Yu, E. T., Croke, E. T., Hunter, A. T., Laursen, T., Bair, A. E., Mayer, J. W., Ahn, C. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

38

Indium diffusion in n-type gallium arsenide

Li, W. M., Cohen, R. M., Simons, D. S., Chi, P. H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

39

Ion implantation induced swelling in 6H-SiC

Nipoti, R., Albertazzi, E., Bianconi, M., Lotti, R., Lulli, G., Cervera, M., Carnera, A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 255 KB

english, 1997

40

Microstructual study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Seong, Tae-Yeon, Kim, Do-Geun, Choi, Kwang-Ki, Baik, Young-Joon

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 591 KB

english, 1997

41

Polarization switching in vertical-cavity surface emitting lasers observed at constant active region temperature

Martín-Regalado, J., Chilla, J. L. A., Rocca, J. J., Brusenbach, P.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 260 KB

english, 1997

42

Polymer waveguides with optimized overlap integral for modal dispersion phase-matching

Wirges, W., Yilmaz, S., Brinker, W., Bauer-Gogonea, S., Bauer, S., Jäger, M., Stegeman, G. I., Ahlheim, M., Stähelin, M., Zysset, B., Lehr, F., Diemeer, M., Flipse, M. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 338 KB

english, 1997

43

Optical studies of GaAs quantum wells strained to GaP

Prieto, J. A., Armelles, G., Pistol, M.-E., Castrillo, P., Silveira, J. P., Briones, F.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 308 KB

english, 1997

44

In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope

Do, Lee-Mi, Kim, Kwangjoon, Zyung, Taehyoung, Shim, Hong-Ku, Kim, Jang-Joo

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 643 KB

english, 1997

45

Direct band gap structures on nanometer-scale, micromachined silicon tips

Shealy, J. R., Macdonald, N. C., Xu, Y., Whittingham, K. L., Emerson, D. T., Pitts, B. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 982 KB

english, 1997

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