Volume 70; Issue 4

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Applied Physics Letters
Volume 70; Issue 4

Applied Physics Letters

Volume 70; Issue 4

1

Ultra-low resistive ohmic contacts on n-GaN using Si implantation

Burm, Jinwook, Chu, Kenneth, Davis, William A., Schaff, William J., Eastman, Lester F., Eustis, Tyler J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

2

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 241 KB

english, 1997

3

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G., Erikson, H. I.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 646 KB

english, 1997

4

Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

Itskevich, I. E., Henini, M., Carmona, H. A., Eaves, L., Main, P. C., Maude, D. K., Portal, J. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 282 KB

english, 1997

5

Determining magnetic anisotropies from hysteresis loops

Weber, W., Allenspach, R., Bischof, A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 269 KB

english, 1997

6

The ring-hexavacany in silicon: A stable and inactive defect

Estreicher, S. K., Hastings, J. L., Fedders, P. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

7

A noninvasive bunch length monitor for femtosecond electron bunches

Wang, D. X., Kraft, G. A., Price, E., Wood, P. A. D., Porterfield, D. W., Crowe, T. W.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

8

Tunable electron-hole gases in gated InAs/GaSb/AlSb systems

Drndic, M., Grimshaw, M. P., Cooper, L. J., Ritchie, D. A., Patel, N. K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 665 KB

english, 1997

9

Atomic force microscope study of photo-polymerized and photo-dimerized epitaxial C[sub 60] films

Hassanien, A., Gasperič, J., Demsar, J., Muševič, I., Mihailovic, D.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1.84 MB

english, 1997

10

Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Li, X., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

11

Densities of Si determined by an image digitizing technique in combination with an electrostatic levitator

Ohsaka, K., Chung, S. K., Rhim, W. K., Holzer, J. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 317 KB

english, 1997

12

Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

Ershov, M., Liu, H. C., Buchanan, M., Wasilewski, Z. R., Ryzhii, V.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 331 KB

english, 1997

13

Precursor-mediated adsorption of tertiarybutylarsine on GaAs (001)-(4×6)

Cui, Jie, Ozeki, Masashi, Ohashi, Masafumi

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 317 KB

english, 1997

14

Scanning tunneling microscopy of the atomic structure of the GaAs (110) surface at reduced tip sample separation

Heinrich, A. J., Wenderoth, M., Rosentreter, M. A., Schneider, M. A., Ulbrich, R. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 412 KB

english, 1997

15

Flux penetration in bicrystal-substrate thin-film YBa[sub 2]Cu[sub 3]O[sub 7−δ] Josephson junctions

Hinaus, B. M., Redwing, R. D., Rzchowski, M. S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 345 KB

english, 1997

16

Luminescence, absorption, and site symmetry of Ce activated SrGa[sub 2]S[sub 4] phosphors

Warren, W. L., Vanheusden, K., Rodriguez, M. A., Seager, C. H., Tallant, D. R., Rack, P. D., Holloway, P. H., Wagner, B. K., Summers, C. J., Yocom, P. N.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 699 KB

english, 1997

17

A model for visible photon emission from reverse-biased silicon p-n junctions

Obeidat, Amjad T., Kalayjian, Zaven, Andreou, Andreas G., Khurgin, Jacob B.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 353 KB

english, 1997

18

Formation and characteristics of Pb(Zr,Ti)O[sub 3] field-effect transistor with a SiO[sub 2] buffer layer

Yu, Jun, Hong, ZhaoJian, Zhou, Wenli, Cao, Guangjun, Xie, Jifan, Li, Xingjiao, Li, Shaoping, Li, Zhuang

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 317 KB

english, 1997

19

Quantum-well activated phosphors: A new concept for electroluminescent displays

Engelmann, R., Ferguson, J., Solanki, R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 297 KB

english, 1997

20

Optical transition in SiGe self-organized dots

Chen, H., Cheng, W. Q., Xie, X. G., Huang, Q., Zhou, J. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 422 KB

english, 1997

21

Blue photoluminescence of CdAl[sub 2]S[sub 4] single crystal

Jin, Moon-Seog, Kim, Wha-Tek

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 323 KB

english, 1997

22

Evidence for hole traps at the amorphous silicon/amorphous silicon–germanium heterostructure interface

Palsule, C., Paschen, U., Cohen, J. D., Yang, J., Guha, S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 340 KB

english, 1997

23

Technique for measurement of the minority carrier mobility with a bipolar junction transistor

D’Souza, S. L., Melloch, M. R., Lundstrom, M. S., Harmon, E. S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 279 KB

english, 1997

24

Metglas thin film with as-deposited domain alignment for smart sensor and actuator applications

Lu, Yong, Nathan, Arokia

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 269 KB

english, 1997

25

Indium doping of CdTe polycrystalline films prepared by co-sputtering of CdTe–In–Cd targets

Becerril, M., Zelaya-Angel, O., Ramı́rez-Bon, R., Espinoza-Beltrán, F. J., González-Hernández, J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 257 KB

english, 1997

26

Linearity of unshielded spin-valve sensors

Sugawara, N., Takiguchi, M., Yaoi, T., Negoro, N., Kagawa, K., Okabe, A., Hayashi, K., Kano, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 253 KB

english, 1997

27

Temperature dependent segregation of metals at Si–SiO[sub 2] interfaces during oxygen ion bombardment

Williams, J. S., Short, K. T., White, A. E.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 255 KB

english, 1997

28

Three dimensional polarization dependence of OH bands absorption in potassium niobate crystals

Tong, Xiaolin, Yariv, Amnon, Zhang, Min, Agranat, Aharon

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 274 KB

english, 1997

29

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 254 KB

english, 1997

30

Fabrication of small diamond tips for scanning probe microscopy application

Oesterschulze, E., Scholz, W., Mihalcea, Ch., Albert, D., Sobisch, B., Kulisch, W.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 1.03 MB

english, 1997

31

Anomalous position of the maximum in magnetic hysteresis loops measured on (Bi,Pb)[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub 10]/Ag tapes

Koblischka, M. R., Galkin, L. Půst, A., Nálevka, P.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 335 KB

english, 1997

32

Optical studies of Ge islanding on Si(111)

Persans, P. D., Deelman, P. W., Stokes, K. L., Schowalter, L. J., Byrne, A., Thundat, T.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 256 KB

english, 1997

33

Depletion-type thin-film transistors with a ferroelectric insulator

Prins, M. W. J., Zinnemers, S. E., Cillessen, J. F. M., Giesbers, J. B.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 273 KB

english, 1997

34

Possible origin for (110)-oriented growth of grains in hydrogenated microcrystalline silicon films

Sun, Yong, Miyasato, Tatsuro, Wigmore, J. K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

35

Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition

Capellini, G., Di Gaspare, L., Evangelisti, F., Palange, E.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 782 KB

english, 1997

36

Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

Lane, B., Wu, D., Rybaltowski, A., Yi, H., Diaz, J., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

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