Volume 70; Issue 7

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Applied Physics Letters
Volume 70; Issue 7

Applied Physics Letters

Volume 70; Issue 7

1

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Sugimoto, Yasunobu, Kiyoku, Hiroyuki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 306 KB

english, 1997

2

Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

Gluschenkov, O., Myoung, J. M., Shim, K. H., Kim, K., Figen, Z. G., Gao, J., Eden, J. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

3

High-resistance layers in n-type 4H-silicon carbide by hydrogen ion implantation

Nadella, Ravi K., Capano, M. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 257 KB

english, 1997

4

Large magnetic entropy change in La[sub 0.75]Ca[sub 0.25]MnO[sub 3]

Guo, Z. B., Zhang, J. R., Huang, H., Ding, W. P., Du, Y. W.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 348 KB

english, 1997

5

Hole perpendicular transport in GaAs–AlGaAs superlattices

Dong, Bing, Lei, X. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

6

Severe gain suppression due to dynamic carrier heating in quantum well lasers

Grupen, Matt, Hess, Karl

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 345 KB

english, 1997

7

X-ray diffraction study of alternating nanocrystalline silicon/amorphous silicon multilayers

Wu, X. L., Tong, S., Liu, X. N., Bao, X. M., Jiang, S. S., Feng, D., Siu, G. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

8

Abrupt discontinuous relationships between supercooling and melt overheating

Tong, H. Y., Shi, F. G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 306 KB

english, 1997

9

Scalability of small-aperture selectively oxidized vertical cavity lasers

Choquette, Kent D., Chow, W. W., Hadley, G. R., Hou, H. Q., Geib, K. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 315 KB

english, 1997

10

Exciton spectral splitting near room temperature from high contrast semiconductor microcavities

Graham, L. A., Deng, Q., Deppe, D. G., Huffaker, D. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

11

Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

Borghesi, A., Giardini, M. E., Marazzi, M., Sassella, A., De Santi, G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 309 KB

english, 1997

12

Comment on “Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions” [Appl. Phys. Lett. 69, 1276 (1996)]

Siegle, H., Loa, I., Thurian, P., Eckey, L., Hoffmann, A., Broser, I., Thomsen, C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 287 KB

english, 1997

13

Nonlinear ac susceptibility of high temperature superconducting rings

Mrowka, F., Wurlitzer, M., Esquinazi, P., Brandt, E. H., Lorenz, M., Zimmer, K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

14

Transport of argon ions in an inductively coupled high-density plasma reactor

Sadeghi, N., van de Grift, M., Vender, D., Kroesen, G. M. W., de Hoog, F. J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

15

Picosecond hot electron light emission from submicron complementary metal–oxide–semiconductor circuits

Tsang, J. C., Kash, J. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 384 KB

english, 1997

16

Improved atomic force microscopy resolution using an electric double layer

Sokolov, I. Yu., Henderson, G. S., Wicks, F. J., Ozin, G. A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 704 KB

english, 1997

17

Anisotropic piezoelectric effect in lateral surface superlattices

Skuras, E., Long, A. R., Larkin, I. A., Davies, J. H., Holland, M. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

18

Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

Marsi, M., Couprie, M. E., Nahon, L., Garzella, D., Hara, T., Bakker, R., Billardon, M., Delboulbé, A., Indlekofer, G., Taleb-Ibrahimi, A.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

19

Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors

Dimitriadis, C. A., Brini, J., Kamarinos, G.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 336 KB

english, 1997

20

Cu enhanced oxidation of SiGe and SiGeC

Jaquez, E. J., Bair, A. E., Alford, T. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 316 KB

english, 1997

21

Erratum: “Further evidence for the quantum confined electrochemistry model of the formation mechanism of p[sup −]-type porous silicon” [Appl. Phys. Lett. 69, 3399 (1996)]

Jia, L., Zhang, S. L., Wong, S. P., Wilson, I. H., Hark, S. K., Liu, Z. F., Cai, S. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 284 KB

english, 1997

22

A study on specific optic impedance of materials

Mohanan, S., Vaidyan, V. K., Kurian, K. V.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 244 KB

english, 1997

23

Acoustic excitation of the circular Bragg–Fresnel lens in backscattering geometry

Souvorov, A., Snigireva, I., Snigirev, A., Aristova, E., Hartman, Ya.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 983 KB

english, 1997

24

Room temperature electro-optic effect in CdHgTe multiple quantum well heterostructures at 1.5 μm

Mula, Guido, Pelekanos, N. T., Gentile, P., Magnea, N., Pautrat, J. L.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 260 KB

english, 1997

25

High-gain p-i-n infrared photosensors with Bragg reflectors on amorphous silicon–germanium alloy

Ho, Jyh-Jier, Fang, Y. K., Wu, Kuen-Hsien, Tsai, C. S.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 258 KB

english, 1997

26

Image upconversion via unidirectional anti-Stokes generation by reverse-circularly polarized pump beams

Xia, X.-W., Wada, S., Akagawa, K., Tashiro, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 260 KB

english, 1997

27

A high strain two-stack two-color quantum well infrared photodetector

Tidrow, M. Z., Chiang, J. C., Li, Sheng S., Bacher, K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 256 KB

english, 1997

28

Measurement of saturation intensities in ion doped solids by transient nonlinear refraction

Pilla, V., Impinnisi, P. R., Catunda, T.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 273 KB

english, 1997

29

GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

Wang, C. A., Choi, H. K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 242 KB

english, 1997

30

Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

Koshiba, S., Tanaka, Ichiro, Nakamura, Y., Noge, H., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 365 KB

english, 1997

31

Increased critical current density in Nb–Ti wires having Nb artificial pinning centers

Heussner, R. W., Marquardt, J. D., Lee, P. J., Larbalestier, D. C.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 333 KB

english, 1997

32

A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

Guo, Lingjie, Leobandung, Effendi, Chou, Stephen Y.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 417 KB

english, 1997

33

Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements

Fang, W., Hattendorf, M., Chuang, S. L., Minch, J., Chang, C. S., Bethea, C. G., Chen, Y. K.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

34

“Plug and play” systems for quantum cryptography

Muller, A., Herzog, T., Huttner, B., Tittel, W., Zbinden, H., Gisin, N.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

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