Volume 72; Issue 10

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Applied Physics Letters
Volume 72; Issue 10

Applied Physics Letters

Volume 72; Issue 10

1

Self-organized formation of hexagonal pore arrays in anodic alumina

Jessensky, O., Muller, F., Gosele, U.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 538 KB

english, 1998

2

Silicon single-electron quantum-dot transistor switch operating at room temperature

Zhuang, Lei, Guo, Lingjie, Chou, Stephen Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 438 KB

english, 1998

3

Novel microwave plasma reactor for diamond synthesis

FuÌner, M., Wild, C., Koidl, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 525 KB

english, 1998

4

Explanation for carrier removal and type conversion in irradiated silicon solar cells

Yamaguchi, T., Taylor, S. J., Watanabe, S., Ando, K., Yamaguchi, M., Hisamatsu, T., Matsuda, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 396 KB

english, 1998

5

Growth of epitaxial Al[sub x]Ga[sub 1âx]N films by pulsed laser deposition

Huang, Tzu-fang, Harris, James S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 471 KB

english, 1998

6

An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

Poborchii, Vladimir V., Kolobov, Alexander V., Tanaka, Kazunobu

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 306 KB

english, 1998

7

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray, T. F. Kuech

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 289 KB

english, 1998

8

Spatial resolution of capacitance-voltage profiles in quantum well structures

Moon, C. R., Choe, Byung-Doo, Kwon, S. D., Lim, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

9

Gain of the mode locked p-Ge laser in the low field region

Hovenier, J. N., Klaassen, T. O., Wenckebach, W. Th., Muravjov, A. V., Pavlov, S. G., Shastin, V. N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

10

Electrical characteristics of plasma oxidized Si[sub 1−x−y]Ge[sub x]C[sub y] metal–oxide–semiconductor capacitors

Ray, S. K., Bera, L. K., Maiti, C. K., John, S., Banerjee, S. K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 324 KB

english, 1998

11

Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition

Gurtovoi, V. L., Valyaev, V. V., Shapoval, S. Yu., Pustovit, A. N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

12

Fabrication of a low-operating voltage diamond thin film metal–semiconductor–metal photodetector by laser writing lithography

Jiang, Wei, Ahn, Jaeshin, Xu, Feng-Lan, Liaw, Chin-Yi, Chan, Yuen-Chuen, Zhou, Yan, Lam, Yee-Loy

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 432 KB

english, 1998

13

Liquid source metal–organic chemical-vapor deposition of high-quality YBa[sub 2]Cu[sub 3]O[sub 7−x] films on polycrystalline silver substrates

Studebaker, D. B., Zhang, J., Marks, T. J., Wang, Y. Y., Dravid, V. P., Schindler, J. L., Kannewurf, C. R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 638 KB

english, 1998

14

Chemical vapor deposition of ultrathin Ta[sub 2]O[sub 5] films using Ta[N(CH[sub 3])[sub 2]][sub 5]

Son, K.-A., Mao, A. Y., Sun, Y.-M., Kim, B. Y., Liu, F., Kamath, A., White, J. M., Kwong, D. L., Roberts, D. A., Vrtis, R. N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

15

Excitonic photoluminescence in a shallow quantum well under electric field

Tignon, J., Heller, O., Roussignol, Ph., Delalande, C., Bastard, G., Thierry-Mieg, V., Planel, R., Palmier, J. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 315 KB

english, 1998

16

SrBi[sub 2]Ta[sub 2]O[sub 9] memory capacitor on Si with a silicon nitride buffer

Han, Jin-Ping, Ma, T. P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 335 KB

english, 1998

17

A high-speed free-space traveling wave photodetector

Merlet, Thomas, Dolfi, Daniel, Collot, Philippe, Nagle, Julien, Huignard, Jean-Pierre

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 343 KB

english, 1998

18

Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p–n junction

Emel’yanov, A. M., Sobolev, N. A., Yakimenko, A. N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 324 KB

english, 1998

19

Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

Ensinger, W., Volz, K., Schrag, G., Stritzker, B., Rauschenbach, B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 575 KB

english, 1998

20

Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy

Götz, W., Romano, L. T., Walker, J., Johnson, N. M., Molnar, R. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 339 KB

english, 1998

21

Growing a periodic microstructure on the superconductor crystal surface by electrocrystallization

Zheng, X. G., Taira, M., Suzuki, M., Xu, C. N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 549 KB

english, 1998

22

Deep level defects in n-type GaN grown by molecular beam epitaxy

Wang, C. D., Yu, L. S., Lau, S. S., Yu, E. T., Kim, W., Botchkarev, A. E., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 336 KB

english, 1998

23

Electrical properties and crystal structures of (Ba,Sr)TiO[sub 3] films and BaRuO[sub 3] bottom electrodes prepared by sputtering

Chu, Chung Ming, Lin, Pang

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 386 KB

english, 1998

24

Electron paramagnetic resonance and photoluminescence studies of chromium in SrS

Kreissl, J., Troppenz, U., Hüttl, B., Schrottke, L., Fouassier, C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

25

Annealing of ion implanted gallium nitride

Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C., Stall, R. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

26

Carbon doping of InSb using CBr[sub 4] during growth by gas-source molecular beam epitaxy

Schoenfeld, W. V., Antonell, M. J., Abernathy, C. R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 325 KB

english, 1998

27

Nanometer scale surface clustering on ZnSe epilayers

Smathers, J. B., Kneedler, E., Bennett, B. R., Jonker, B. T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 385 KB

english, 1998

28

Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures

Caputo, D., de Cesare, G., Nascetti, A., Palma, F., Petri, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 262 KB

english, 1998

29

Mechanical parametric amplification in piezoresistive gallium arsenide microcantilevers

Dâna, A., Ho, F., Yamamoto, Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 509 KB

english, 1998

30

Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition

Kim, Kihong, Song, Juho, Kwon, Daehyuk, Lee, G. S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 273 KB

english, 1998

31

Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

Bennett, Brian R., Yang, M. J., Shanabrook, B. V., Boos, J. B., Park, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 260 KB

english, 1998

32

Improvement of (Pb[sub 1−x]La[sub x])(Zr[sub y]Ti[sub 1−y])[sub 1−x/4]O[sub 3] ferroelectric thin films by use of SrRuO[sub 3]/Ru/Pt/Ti bottom electrodes

Liu, Kuo-Shung, Tseng, Tzu-Feng, Lin, I-Nan

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 278 KB

english, 1998

33

Favorable formation of the C49-TiSi[sub 2] phase on Si(001) determined by first-principles calculations

Yu, B. D., Miyamoto, Yoshiyuki, Sugino, Osamu, Sasaki, T., Ohno, T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 277 KB

english, 1998

34

Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy

Chan, C. H., Chen, M. C., Lin, H. H., Chen, Y. F., Jan, G. J., Chen, Y. H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 270 KB

english, 1998

35

Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma

Cismaru, C., Shohet, J. L., Nauka, K., Friedmann, J. B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 333 KB

english, 1998

36

Fiber image guide with subwavelength resolution

Ghaemi, H. F., Li, Yao, Thio, Tineke, Wang, T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 462 KB

english, 1998

37

Boundary condition effects on field-induced deformation modes in polymer dispersed liquid crystals

Yamaguchi, Takeshi, Kawata, Yasushi, Mori, Yasushi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 370 KB

english, 1998

38

Leakage current models of thin film silicon-on-insulator devices

Shin, Hank, Hong, Stella, Wetteroth, Tom, Wilson, Syd R., Schroder, Dieter K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 324 KB

english, 1998

39

c-axis oriented ferroelectric thin films of Si-substituted PbTiO[sub 3] on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

Purandare, S. C., Palkar, V. R., John, J., Multani, M. S., Pinto, R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 311 KB

english, 1998

40

A novel self-consistent simulator for current-density–voltage characteristics of semiconductor field emitters

DasGupta, A., Arslan, D., Sigurdardottir, A., Hartnagel, H. L.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 344 KB

english, 1998

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