Volume 72; Issue 19

Applied Physics Letters

Volume 72; Issue 19
3

GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy

Year:
1998
Language:
english
File:
PDF, 385 KB
english, 1998
8

Measurements of negative ion densities by absorption spectroscopy

Year:
1998
Language:
english
File:
PDF, 376 KB
english, 1998
16

Resistivity of boron-doped diamond microcrystals

Year:
1998
Language:
english
File:
PDF, 473 KB
english, 1998
17

Relaxation times in InAs/AlSb quantum wells

Year:
1998
Language:
english
File:
PDF, 352 KB
english, 1998
19

A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures

Year:
1998
Language:
english
File:
PDF, 618 KB
english, 1998
26

Intermittent-contact scanning capacitance microscope for lithographic overlay measurement

Year:
1998
Language:
english
File:
PDF, 304 KB
english, 1998
30

Recurrent local resistance breakdown of epitaxial BaTiO[sub 3] heterostructures

Year:
1998
Language:
english
File:
PDF, 269 KB
english, 1998
32

Emission of silicon cluster ions by molecular ion bombardment

Year:
1998
Language:
english
File:
PDF, 262 KB
english, 1998
38

Observation of optically-active metastable defects in undoped GaN epilayers

Year:
1998
Language:
english
File:
PDF, 308 KB
english, 1998