Volume 72; Issue 24

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Applied Physics Letters
Volume 72; Issue 24

Applied Physics Letters

Volume 72; Issue 24

1

Spectrally-resolved near-field investigation of proton implanted vertical cavity surface emitting lasers

Kim, Jeongyong, Pride, David E., Boyd, Joseph T., Jackson, Howard E.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 429 KB

english, 1998

2

Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

Wei, Su-Huai, Zhang, S. B., Zunger, Alex

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 340 KB

english, 1998

3

High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope

Kitamura, Shinichi, Iwatsuki, Masashi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 682 KB

english, 1998

4

Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

Peng, C. S., Zhao, Z. Y., Chen, H., Li, J. H., Li, Y. K., Guo, L. W., Dai, D. Y., Huang, Q., Zhou, J. M., Zhang, Y. H., Sheng, T. T., Tung, C. H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 585 KB

english, 1998

5

Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation

Rinnert, H., Vergnat, M., Marchal, G., Burneau, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 368 KB

english, 1998

6

Metalâsemiconductorâmetal near-infrared light detector based on epitaxial Ge/Si

Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., Palange, E., Evangelisti, F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 439 KB

english, 1998

7

Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process

Passlack, M., Droopad, R., Yu, Z., Overgaard, C., Bowers, B., Abrokwah, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 311 KB

english, 1998

8

Band edge versus deep luminescence of In[sub x]Ga[sub 1âx]N layers grown by molecular beam epitaxy

Grandjean, N., Massies, J., Leroux, M., De Mierry, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

9

Electronic states tuning of InAs self-assembled quantum dots

GarcÄ±Ìa, J. M., Mankad, T., Holtz, P. O., Wellman, P. J., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

10

High definition aperture probes for near-field optical microscopy fabricated by focused ion beam milling

Veerman, J. A., Otter, A. M., Kuipers, L., van Hulst, N. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 502 KB

english, 1998

11

Minority carrier diffusion length and lifetime in GaN

BandicÌ, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 435 KB

english, 1998

12

High-power Î»â8âÎ¼m quantum cascade lasers with near optimum performance

Gmachl, Claire, Tredicucci, Alessandro, Capasso, Federico, Hutchinson, Albert L., Sivco, Deborah L., Baillargeon, James N., Cho, Alfred Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 966 KB

english, 1998

13

Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

Park, Seoung-Hwan, Chuang, Shun-Lien

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 407 KB

english, 1998

14

Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

Mamor, M., Auret, F. D., Goodman, S. A., Meyer, W. E., Myburg, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 286 KB

english, 1998

15

Green photoluminescence from Er-containing amorphous SiN thin films

A. R. Zanatta, L. A. O. Nunes

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 311 KB

english, 1998

16

Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

Smorchkova, I. P., Samarth, N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 307 KB

english, 1998

17

Determination of the ordered structures of Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3] and Ba(Mg[sub 1/3]Nb[sub 2/3])O[sub 3] by atomic-resolution Z-contrast imaging

Yan, Y., Pennycook, S. J., Xu, Z., Viehland, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 683 KB

english, 1998

18

Electrical evaluation of damage on the sidewalls of InP mesa structures fabricated by reactive ion etching with methane and hydrogen

Yamamoto, Norio, Mawatari, Hiroyasu, Kishi, Kenji

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 334 KB

english, 1998

19

A photoconductive, miniature terahertz source

Lai, Richard K., Hwang, Jiunn-Ren, Norris, Theodore B., Whitaker, John F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 506 KB

english, 1998

20

Topography measurements of the critical thickness of ZnSe grown on GaAs

Horsburgh, G., Prior, K. A., Meredith, W., Galbraith, I., Cavenett, B. C., Whitehouse, C. R., Lacey, G., Cullis, A. G., Parbrook, P. J., Möck, P., Mizuno, K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 475 KB

english, 1998

21

Boltzmann machine neuron device using quantum-coupled single electrons

Wu, Nan-Jian, Shibata, Naoto, Amemiya, Yoshihito

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

22

Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing

Janz, S., Buchanan, M., van der Meer, P., Wasilewski, Z. R., Xu, D.-X., Piva, P., Mitchell, I. V., Akano, U. G., Fiore, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 326 KB

english, 1998

23

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

Raghunathan, R., Baliga, B. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 427 KB

english, 1998

24

High sensitivity spin-valve strain sensor

Mamin, H. J., Gurney, B. A., Wilhoit, D. R., Speriosu, V. S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

25

Focused ion-beam fabrication of fiber probes with well-defined apertures for use in near-field scanning optical microscopy

Pilevar, Saeed, Edinger, Klaus, Atia, Walid, Smolyaninov, Igor, Davis, Christopher

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 490 KB

english, 1998

26

Polymer-based highly multimode electro-optic waveguide modulator

Sun, De-Gui, Chen, Ray T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 789 KB

english, 1998

27

Low noise operation of integrated YBa[sub 2]Cu[sub 3]O[sub 7] magnetometers in static magnetic fields

Krey, S., David, B., Eckart, R., Dössel, O.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 315 KB

english, 1998

28

Self-regulated growth of tilted superlattices by atomic layer epitaxy

Hartmann, J. M., Charleux, M., Cibert, J., Mariette, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 362 KB

english, 1998

29

Metalorganic molecular-beam-epitaxy-grown In[sub 0.77]Ga[sub 0.23]As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength

Mitsuhara, Manabu, Ogasawara, Matsuyuki, Oishi, Mamoru, Sugiura, Hideo

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 448 KB

english, 1998

30

Fabrication of multiperiod Si/SiO[sub 2]/Ge layered structure through chemical bond manipulation

Prabhakaran, K., Matsumoto, T., Ogino, T., Masumoto, Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.47 MB

english, 1998

31

Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode

Mizutani, Natsuhiko, Miyazawa, Sei-ichi, Nakanishi, Masahiro, Majima, Masao, Nitta, Jun, Sekiguchi, Yoshinobu, Nojiri, Hidetoshi, Handa, Yuichi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 247 KB

english, 1998

32

Stability of ultrasmooth surface morphology of (110) YBa[sub 2]Cu[sub 3]O[sub 7−δ] homoepitaxial films and Nb/Au/(110) YBa[sub 2]Cu[sub 3]O[sub 7−δ] junctions

Usagawa, Toshiyuki, Wen, Jianguo, Ishimaru, Yoshihiro, Koyama, Satoshi, Utagawa, Tadashi, Enomoto, Youichi

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 734 KB

english, 1998

33

Effects of inhomogeneous oxygen content in (La,Gd)[sub 0.7]Ca[sub 0.3]MnO[sub 3+δ] perovskites

Sun, J. R., Rao, G. H., Zhang, Y. Z.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 287 KB

english, 1998

34

Perpendicular magnetization and dipolar antiferromagnetism in double layer nanostripe arrays of Fe(110) on W(110)

Hauschild, J., Gradmann, U., Elmers, H. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 377 KB

english, 1998

35

Reduction of effects of Fabry–Perot fringing in wavelength modulation experiments

Dharamsi, A. N., Shea, P. C., Bullock, A. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 289 KB

english, 1998

36

Atomic force measurement of low-frequency dielectric noise

Walther, L. E., Vidal Russell, E., Israeloff, N. E., Gomariz, H. Alvarez

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

37

Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

Tu, R. C., Su, Y. K., Chen, H. J., Huang, Y. S., Chou, S. T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 270 KB

english, 1998

38

Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP

Zeng, L., Yang, B. X., Cavus, A., Lin, W., Luo, Y. Y., Tamargo, M. C., Guo, Y., Chen, Y. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 323 KB

english, 1998

39

Materials integration of gallium arsenide and silicon by wafer bonding

Kopperschmidt, P., Senz, S., Kästner, G., Hesse, D., Gösele, U. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 650 KB

english, 1998

40

Theoretical analysis of the resistively coupled single-electron transistor

Korotkov, Alexander N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 347 KB

english, 1998

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