Volume 72; Issue 3

Applied Physics Letters

Volume 72; Issue 3
3

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Year:
1998
Language:
english
File:
PDF, 362 KB
english, 1998
11

Trapping of size-selected Ag clusters at surface steps

Year:
1998
Language:
english
File:
PDF, 403 KB
english, 1998
21

Nearly noise-free transistor operated in the 2–18 GHz range

Year:
1998
Language:
english
File:
PDF, 346 KB
english, 1998
24

Observation of voltage-locked states in strongly coupled stacked Josephson junctions

Year:
1998
Language:
english
File:
PDF, 260 KB
english, 1998
25

High carrier mobility in polycrystalline thin film diamond

Year:
1998
Language:
english
File:
PDF, 385 KB
english, 1998
27

Variation of the relative permittivity of charged dielectrics

Year:
1998
Language:
english
File:
PDF, 252 KB
english, 1998