Volume 72; Issue 4

Applied Physics Letters

Volume 72; Issue 4
1

Electron-irradiation-induced deep level in n-type GaN

Year:
1998
Language:
english
File:
PDF, 48 KB
english, 1998
6

High energy products in rapidly annealed nanoscale Fe/Pt multilayers

Year:
1998
Language:
english
File:
PDF, 441 KB
english, 1998
9

Ultraviolet and violet GaN light emitting diodes on silicon

Year:
1998
Language:
english
File:
PDF, 364 KB
english, 1998
11

Excess silicon at the Si[sub 3]N[sub 4]/SiO[sub 2] interface

Year:
1998
Language:
english
File:
PDF, 329 KB
english, 1998
20

The behavior of As precipitates in low-temperature-grown GaAs

Year:
1998
Language:
english
File:
PDF, 314 KB
english, 1998
23

Doping of Al[sub x]Ga[sub 1−x]N

Year:
1998
Language:
english
File:
PDF, 249 KB
english, 1998
24

Analytic expression for triple-point electron emission from an ideal edge

Year:
1998
Language:
english
File:
PDF, 291 KB
english, 1998
30

Deep levels in Er-doped liquid phase epitaxy grown silicon

Year:
1998
Language:
english
File:
PDF, 259 KB
english, 1998
32

Nanometer-scale imaging with an ultrafast scanning tunneling microscope

Year:
1998
Language:
english
File:
PDF, 373 KB
english, 1998