Volume 73; Issue 2

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Applied Physics Letters
Volume 73; Issue 2

Applied Physics Letters

Volume 73; Issue 2

1

Contacting carbon nanotubes selectively with low-ohmic contacts for four-probe electric measurements

Bachtold, A., Henny, M., Terrier, C., Strunk, C., Schonenberger, C., Salvetat, J.-P., Bonard, J.-M., Forro, L.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 419 KB

english, 1998

2

In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Held, R., Vancura, T., Heinzel, T., Ensslin, K., Holland, M., Wegscheider, W.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 989 KB

english, 1998

3

Semiconducting Ge clathrates: Promising candidates for thermoelectric applications

Nolas, G. S., Cohn, J. L., Slack, G. A., Schujman, S. B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 312 KB

english, 1998

4

Free-electron-laser near-field nanospectroscopy

Cricenti, A., Generosi, R., Perfetti, P., Gilligan, J. M., Tolk, N. H., Coluzza, C., Margaritondo, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 549 KB

english, 1998

5

The effect of surface segregation on the light-emission intensity of Si/SiGe/Si heterostructures

Kimura, Yoshinobu, Nakagawa, Kiyokazu, Miyao, Masanobu

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

6

Calculated and measured transmittance of metallodielectric photonic crystals incorporating flat metal elements

Kao, A., McIntosh, K. A., McMahon, O. B., Atkins, R., Verghese, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 308 KB

english, 1998

7

Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

Nelson, J. S., Schultz, P. A., Wright, A. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 276 KB

english, 1998

8

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

L. S. Yu, D. J. Qiao, Q. J. Xing, S. S. Lau, K. S. Boutros, J. M. Redwing

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 343 KB

english, 1998

9

Texture control and interfacial structures of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films on Pt

Lee, Jeong Soo, Kim, Hyun Ha, Kwon, Hyun Ja, Jeong, Young Woo

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 576 KB

english, 1998

10

Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures

Huang, Y. S., Sun, W. D., Pollak, Fred H., Freeouf, J. L., Calder, I. D., Mallard, R. E.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 396 KB

english, 1998

11

Ultrahigh Si[sup +] implant activation efficiency in GaN using a high-temperature rapid thermal process system

Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., Rieger, D. J., Han, J., Drummond, T. J., Shul, R. J., Wilson, R. G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

12

Direct assessment of tunable Schottky barriers by internal photoemission spectroscopy

Gigli, G., Lomascolo, M., De Vittorio, M., Cingolani, R., Cola, A., Quaranta, F., Sorba, L., Mueller, B., Franciosi, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 328 KB

english, 1998

13

Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II–VI laser diodes

Kijima, Satoru, Okuyama, Hiroyuki, Sanaka, Yumi, Kobayashi, Takashi, Tomiya, Shigetaka, Ishibashi, Akira

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 491 KB

english, 1998

14

Generation of tunable coherent extreme ultraviolet radiation beyond 19 eV by resonant four-wave mixing in argon

Palm, H., Merkt, F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 333 KB

english, 1998

15

Oxygen vacancy mobility determined from current measurements in thin Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] films

Zafar, Sufi, Jones, Robert E., Jiang, Bo, White, Bruce, Chu, Peir, Taylor, D., Gillespie, Sherry

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 315 KB

english, 1998

16

In situ diagnostics of film thickness and surface roughness of diamond films on a Ti–6Al–4V alloy by optical pyrometry

Catledge, Shane A., Comer, Walton, Vohra, Yogesh K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 348 KB

english, 1998

17

High-precision film thickness determination using a laser-based ultrasonic technique

Banet, Matthew J., Fuchs, Martin, Rogers, John A., Reinold, James H., Knecht, Jeffrey M., Rothschild, Mordechai, Logan, Randy, Maznev, A. A., Nelson, Keith A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 433 KB

english, 1998

18

540 mW of blue output power at 425 nm generated by intracavity frequency doubling an upconversion-pumped Er[sup 3+]:YLiF[sub 4] laser

Möbert, P. E.-A., Heumann, E., Huber, G., Chai, B. H. T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 352 KB

english, 1998

19

Direct formation of self-assembled quantum dots under tensile strain by heteroepitaxy of PbSe on PbTe (111)

Pinczolits, M., Springholz, G., Bauer, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 678 KB

english, 1998

20

The influence of mechanical stress on the dielectric breakdown field strength of thin SiO[sub 2] films

Jeffery, Steve, Sofield, Carl J., Pethica, John B.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 320 KB

english, 1998

21

Optical shutter driven photochemically from anisotropic polymer network containing liquid crystalline and azobenzene molecules

Kurihara, Seiji, Masumoto, Kohji, Nonaka, Takamasa

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

22

Electronic properties of defects introduced in p-type Si[sub 1−x]Ge[sub x] during ion etching

Goodman, S. A., Auret, F. D., Mamor, M., Greiner, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 343 KB

english, 1998

23

Microprobe spectroscopy of localized exciton states in II–VI quantum wells

Cingolani, R., Sogawa, F., Arakawa, Y., Vanzetti, L., Sorba, L., Franciosi, A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

24

Excess noise caused by transverse inhomogeneity of conductive channels

Bulashenko, O. M., Rubı́, J. M., Kochelap, V. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

25

Optical gain in GaN epilayers

Hess, S., Taylor, R. A., Ryan, J. F., Beaumont, B., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

26

In situ determination of the terminating layer of La[sub 0.7]Sr[sub 0.3]MnO[sub 3] thin films using coaxial impact-collision ion scattering spectroscopy

Yoshimoto, M., Maruta, H., Ohnishi, T., Sasaki, K., Koinuma, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 345 KB

english, 1998

27

Temperature dependence of field emission characteristics of phosphorus-doped polycrystalline diamond films

Sugino, Takashi, Kuriyama, Kenji, Kimura, Chiharu, Kawasaki, Seiji

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 244 KB

english, 1998

28

Stress relaxation and stability in thick amorphous carbon films deposited in layer structure

Gioti, M., Logothetidis, S., Charitidis, C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

29

Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic Al[sub x]Ga[sub 1−x]N

Wu, J., Yaguchi, H., Onabe, K., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 262 KB

english, 1998

30

Large (50 μm)[sup 2] metal–semiconductor–metal photodetectors with 18 GHz bandwidth at 3 V bias; Reduction of hole pileup

DeCorby, R. G., MacDonald, R. I., Noad, J., Gouin, F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 275 KB

english, 1998

31

Spatially resolved exciton trapping in a voltage-controlled lateral superlattice

Zimmermann, S., Schedelbeck, G., Govorov, A. O., Wixforth, A., Kotthaus, J. P., Bichler, M., Wegscheider, W., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 2.31 MB

english, 1998

32

Twin peak distribution of electron emission profile and impact ionization of ambient molecules during laser ablation of silver target

Issac, Riju C., Gopinath, Pramod, Varier, Geetha K., Nampoori, V. P. N., Vallabhan, C. P. G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 267 KB

english, 1998

33

Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering

Behr, D., Wagner, J., Ramakrishnan, A., Obloh, H., Bachem, K.-H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 258 KB

english, 1998

34

Atomic ordering and the surface morphology of thin films

Léonard, François, Desai, Rashmi C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 278 KB

english, 1998

35

Excitonic luminescence in CuInSe[sub 2]

Schön, J. H., Bucher, E.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 265 KB

english, 1998

36

Evidence for surfactant mediated nucleation and growth of diamond

Lannon, J. M., Gold, J. S., Stinespring, C. D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 251 KB

english, 1998

37

Nondestructive measurement of separated propagation loss for multimode waveguides

Lee, Ching-Ting

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 437 KB

english, 1998

38

Persistent photoconductivity in Cu(In,Ga)Se[sub 2] heterojunctions and thin films prepared by sequential deposition

Rau, U., Schmitt, M., Parisi, J., Riedl, W., Karg, F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 251 KB

english, 1998

39

The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

Reddy, C. V., Balakrishnan, K., Okumura, H., Yoshida, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 310 KB

english, 1998

40

Near single crystal-level dielectric loss and nonlinearity in pulsed laser deposited SrTiO[sub 3] thin films

Li, Hong-Cheng, Si, Weidong, West, Alexander D., Xi, X. X.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

41

Hall mobility in poly(4,4[sup ʹ]-dipentoxy-2,2[sup ʹ]bithiophene) as a function of the doping level

Camaioni, Nadia, Casalbore-Miceli, Giuseppe, Geri, Alessandro, Nicoletti, Sergio

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

42

Wavelength shifting and amplification of optical pulses through cascaded second-order processes in periodically poled lithium niobate

Banfi, G. P., Datta, P. K., Degiorgio, V., Fortusini, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 349 KB

english, 1998

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