Volume 73; Issue 9

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Applied Physics Letters
Volume 73; Issue 9

Applied Physics Letters

Volume 73; Issue 9

1

Raman study of silicon nanocrystals formed in SiNx films by excimer laser or thermal annealing

Volodin, V. A., Efremov, M. D., Gritsenko, V. A., Kochubei, S. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 380 KB

english, 1998

2

Alignment of carbon nanotubes in a polymer matrix by mechanical stretching

Jin, L., Bower, C., Zhou, O.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 611 KB

english, 1998

3

Cobalt nanoclusters in silica glass: Nonlinear optical and magnetic properties

Cattaruzza, E., Gonella, F., Mattei, G., Mazzoldi, P., Gatteschi, D., Sangregorio, C., Falconieri, M., Salvetti, G., Battaglin, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 488 KB

english, 1998

4

High-power (>10 W) continuous-wave operation from 100-Î¼m-aperture 0.97-Î¼m-emitting Al-free diode lasers

Al-Muhanna, A., Mawst, L. J., Botez, D., Garbuzov, D. Z., Martinelli, R. U., Connolly, J. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 321 KB

english, 1998

5

Aluminum based cathode structure for enhanced electron injection in electroluminescent organic devices

Jabbour, G. E., Kippelen, B., Armstrong, N. R., Peyghambarian, N.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 345 KB

english, 1998

6

Minority-carrier lifetime and efficiency of Cu(In,Ga)Se[sub 2] solar cells

Ohnesorge, B., Weigand, R., Bacher, G., Forchel, A., Riedl, W., Karg, F. H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 344 KB

english, 1998

7

Noise gain and detectivity of n-type GaAs/AlAs/AlGaAs quantum well infrared photodetectors

SchoÌnbein, C., Schneider, H., Rehm, R., Walther, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 339 KB

english, 1998

8

Computer simulations on near-field scanning optical microscopy: Can subwavelength resolution be obtained using uncoated optical fiber probes?

von Freymann, G., Schimmel, Th., Wegener, M., Hanewinkel, B., Knorr, A., Koch, S. W.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 318 KB

english, 1998

9

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Haffouz, S., Lahrèche, H., Vennéguès, P., de Mierry, P., Beaumont, B., Omnès, F., Gibart, P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.00 MB

english, 1998

10

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

Kononchuk, O., Korablev, K. G., Yarykin, N., Rozgonyi, G. A.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 306 KB

english, 1998

11

Direct observation of the interaction between a vortex lattice and dislocations in a superconducting Nb crystal

Horiuchi, Shigeo, Cantoni, Marco, Uchida, Masaya, Tsuruta, Tadamasa, Matsui, Yoshio

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 344 KB

english, 1998

12

Raman study of BaFe[sub 12]O[sub 19] thin films

Kreisel, J., Pignard, S., Vincent, H., Sénateur, J. P., Lucazeau, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 334 KB

english, 1998

13

Green photoluminescence from cubic In[sub 0.4]Ga[sub 0.6]N grown by radio frequency plasma-assisted molecular beam epitaxy

Müllhäuser, J. R., Brandt, O., Trampert, A., Jenichen, B., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 484 KB

english, 1998

14

Optical limiting performances of asymmetric pentaazadentate porphyrin-like cadmium complexes

Sun, Wenfang, Byeon, Clare C., McKerns, Michael M., Lawson, Chris M., Gray, Gary M., Wang, Duoyuan

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 330 KB

english, 1998

15

Bond-length strain in buried Ga[sub 1−x]In[sub x]As thin-alloy films grown coherently on InP(001)

Woicik, J. C., Gupta, J. A., Watkins, S. P., Crozier, E. D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 340 KB

english, 1998

16

Corrugated infrared hot-electron transistors

Chen, C. J., Choi, K. K., Chang, W. H., Tsui, D. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 333 KB

english, 1998

17

Frequency dependence of radar cross section for arbitrarily shaped scatterers

Liu, Hongwei, Antar, Yahia M. M., Shi, Zhendong, Wu, Zhengde

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 343 KB

english, 1998

18

Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures

Huang, Y. S., Sun, W. D., Malikova, L., Pollak, Fred H., Low, T. S., Chang, James S. C.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 325 KB

english, 1998

19

Micro-Raman fingerprint of grain boundary in [100] oriented diamond films: Stress distribution and diamond phases

Rossi, Maria Cristina

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 542 KB

english, 1998

20

Structured luminescent porous silicon layers produced with laser assisted chemical etching

Starovoitov, A., Bayliss, S.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 586 KB

english, 1998

21

GaN epitaxial lateral overgrowth and optical characterization

Li, X., Bishop, S. G., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 650 KB

english, 1998

22

Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment

Li, L., Han, B.-K., Hicks, R. F.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 665 KB

english, 1998

23

Compensation ratio-dependent concentration of a V[sub In]H[sub 4] complex in n-type liquid encapsulated Czochralski InP

Fung, S., Zhao, Y. W., Beling, C. D., Xu, X. L., Gong, M., Sun, N. F., Sun, T. N., Chen, X. D., Zhang, R. G., Liu, S. L., Yang, G. Y., Qian, J. J., Sun, M. F., Liu, X. L.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

24

A superconducting tunnel junction x-ray detector with performance limited by statistical effects

le Grand, J. B., Mears, C. A., Hiller, L. J., Frank, M., Labov, S. E., Netel, H., Chow, D., Friedrich, S., Lindeman, M. A., Barfknecht, A. T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 324 KB

english, 1998

25

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

Jayapalan, J., Skromme, B. J., Vaudo, R. P., Phanse, V. M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 329 KB

english, 1998

26

Band gap and band alignment of strain reduced Si/Si[sub 1−x−y]Ge[sub x]C[sub y] multiple quantum well structures obtained by photoluminescence measurements

Hartmann, R., Gennser, U., Sigg, H., Grützmacher, D., Ensslin, K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 340 KB

english, 1998

27

On the nitridation of silicon by low energy nitrogen bombardment

Petravić, M., Williams, J. S., Conway, M., Deenapanray, P. N. K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 254 KB

english, 1998

28

Interdiffusion of In and Ga in InGaN quantum wells

McCluskey, M. D., Romano, L. T., Krusor, B. S., Johnson, N. M., Suski, T., Jun, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 330 KB

english, 1998

29

Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

Zhang, B. P., Li, Y. Q., Yasuda, T., Wang, W. X., Segawa, Y., Edamatsu, K., Itoh, T.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 278 KB

english, 1998

30

Quantum interference in SiO[sub 2]: A conduction-band mass reappraisal

Ludeke, R., Wen, H. J., Schenk, Andreas

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 266 KB

english, 1998

31

Thermally stable rhenium Schottky contacts to n-GaN

Venugopalan, H. S., Mohney, S. E.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 266 KB

english, 1998

32

Dynamic properties and nonequilibrium processes in electron-beam scribed YBa[sub 2]Cu[sub 3]O[sub 7] Josephson junctions

Davidson, B. A., Nordman, J. E., Hinaus, B. M., Rzchowski, M. S., Siangchaew, K., Libera, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 288 KB

english, 1998

33

Impact ionization in Al[sub x]Ga[sub 1−x]As/GaAs superlattices

Pearsall, T. P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 246 KB

english, 1998

34

Magnetoresistance due to domain walls in an epitaxial microfabricated Fe wire

Rüdiger, U., Yu, J., Kent, A. D., Parkin, S. S. P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 390 KB

english, 1998

35

Recombination dynamics in n-Al[sub x]Ga[sub 1−x]As/n-In[sub 0.5]Ga[sub 0.5]P type-II heterostructures

Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 285 KB

english, 1998

36

A highly transmittive semiconductor base for ballistic electron emission microscopy

Heer, R., Smoliner, J., Strasser, G., Gornik, E.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 257 KB

english, 1998

37

Thermal stability and electrical properties of Zr/Si[sub 1−x−y]Ge[sub x]C[sub y] contacts after rapid thermal annealing

Aubry-Fortuna, V., Eyal, A., Chaix-Pluchery, O., Barthula, M., Meyer, F., Eizenberg, M.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

38

GaN/Al[sub x]Ga[sub 1−x]N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale

Grandjean, N., Massies, J.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

39

Photoreflectance of GaSb/Al[sub 0.4]Ga[sub 0.6]Sb single quantum wells

Geddo, M., Ferrini, R., Patrini, M., Franchi, S., Baraldi, A., Magnanini, R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

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