Volume 74; Issue 3

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Applied Physics Letters
Volume 74; Issue 3

Applied Physics Letters

Volume 74; Issue 3

1

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Register, Leonard F., Rosenbaum, Elyse, Yang, Kevin

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 340 KB

english, 1999

2

Band gap energy in nanocrystalline ZrO[sub 2]:16%Y thin films

Kosacki, Igor, Petrovsky, Vladimir, Anderson, Harlan U.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 386 KB

english, 1999

3

Magnetic and transport properties of IIIâV based magnetic semiconductor (GaMn)As: Growth condition dependence

Shimizu, Hiromasa, Hayashi, Toshiaki, Nishinaga, Tatau, Tanaka, Masaaki

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 372 KB

english, 1999

4

Enhanced electro-optic poling in guestâhost systems using conductive polymer-based cladding layers

Drummond, James P., Clarson, Stephen J., Zetts, John S., Hopkins, F. Kenneth, Caracci, Stephen J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 280 KB

english, 1999

5

Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching

Li, Xin Jian, Zhu, De Liang, Chen, Qian Wang, Zhang, Yu Heng

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 812 KB

english, 1999

6

Proton bombardment-induced electron traps in epitaxially grown n-GaN

Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 278 KB

english, 1999

7

Sixfold-coordinated carbon as a postdiamond phase

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 276 KB

english, 1999

8

Stress evolution during metalorganic chemical vapor deposition of GaN

Hearne, S., Chason, E., Han, J., Floro, J. A., Figiel, J., Hunter, J., Amano, H., Tsong, I. S. T.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 286 KB

english, 1999

9

Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes

Bour, D. P., Kneissl, M., Romano, L. T., Donaldson, R. M., Dunnrowicz, C. J., Johnson, N. M., Evans, G. A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 394 KB

english, 1999

10

Change in electromechanical properties of 0.9PMN:0.1PT relaxor ferroelectric induced by uniaxial compressive stress directed perpendicular to the electric field

Zhao, J., Glazounov, A. E., Zhang, Q. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 344 KB

english, 1999

11

Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

Palinginis, Kimon C., Lubianiker, Yoram, Cohen, J. David, Ilie, Adelina, Kleinsorge, Britta, Milne, William I.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 345 KB

english, 1999

12

Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

Weber, A., Gauthier-Lafaye, O., Julien, F. H., Brault, J., Gendry, M., Désieres, Y., Benyattou, T.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 727 KB

english, 1999

13

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Tachibana, K., Someya, T., Arakawa, Y.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 1.74 MB

english, 1999

14

Fabry–Perot cavity chemical sensors by silicon micromachining techniques

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 709 KB

english, 1999

15

Structural properties and Raman modes of zinc blende InN epitaxial layers

A. Tabata, A. P. Lima, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, V. Lemos, B. Schöttker, T. Frey, D. Schikora, K. Lischka

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 260 KB

english, 1999

16

Improved energy transfer in electrophosphorescent devices

D. F. O’brien, M. A. Baldo, M. E. Thompson, S. R. Forrest

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 546 KB

english, 1999

17

Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n[sup +]-type doped GaAs

Wang, D. P., Wang, K. R., Huang, K. F., Huang, T. C., Chu, A. K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 337 KB

english, 1999

18

Application of neutron interferometry to the measurement of thin film density

Wallace, W. E., Jacobson, D. L., Arif, M., Ioffe, A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 309 KB

english, 1999

19

Intraband absorption in Ge/Si self-assembled quantum dots

Boucaud, P., Le Thanh, V., Sauvage, S., Débarre, D., Bouchier, D.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 440 KB

english, 1999

20

Longitudinal magnetoresistance of CrO[sub 2] thin films

Suzuki, Katsuhiko, Tedrow, P. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 296 KB

english, 1999

21

Suppression of the face-centered-cubic-hexagonal-close-packed stacking fault in Co/Cu(111) ultrathin films by pulsed laser deposition

Zheng, M., Shen, J., Mohan, Ch. V., Ohresser, P., Barthel, J., Kirschner, J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 432 KB

english, 1999

22

Molecular doping of gallium nitride

Pankove, J. I., Torvik, J. T., Qiu, C.-H., Grzegory, I., Porowski, S., Quigley, P., Martin, B.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 301 KB

english, 1999

23

Excited-state absorption and optical-limiting properties of organometallic fullerene–C[sub 60] derivatives

Song, Yinglin, Fang, Guangyu, Wang, Yuxiao, Liu, Shutian, Li, Chunfei, Song, Licheng, Zhu, Yinghuai, Hu, Qingmei

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 306 KB

english, 1999

24

Magnetic dissipation microscopy in ambient conditions

Proksch, Roger, Babcock, Ken, Cleveland, Jason

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 495 KB

english, 1999

25

Elastic strain in In[sub 0.18]Ga[sub 0.82]N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

Wu, M. F., Vantomme, A., Hogg, S. M., Langouche, G., Van der Stricht, W., Jacobs, K., Moerman, I.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 332 KB

english, 1999

26

Scanning localized viscoelastic image using a quartz crystal resonator combined with an atomic force microscopy

Kim, Jong Min, Chang, Sang Mok, Muramatsu, Hiroshi

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 1.38 MB

english, 1999

27

Mechanism of shape formation of three-dimensional periodic nanostructures by bias sputtering

Kawakami, Shojiro, Kawashima, Takayuki, Sato, Takashi

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 2.13 MB

english, 1999

28

Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidized

Sun, J. J., Soares, V., Freitas, P. P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 801 KB

english, 1999

29

Visible light emission from dyes excited by simultaneous absorption of two different frequency beams of light

Rapaport, Alexandra, Ayrault, Karine, St. Matthew-Daniel, Eyitope, Bass, Michael

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 318 KB

english, 1999

30

Influence of dynamical scattering in crystalline poly(vinylidene fluoride-trifluoroethylene) copolymers

Borca, C. N., Choi, Jaewu, Adenwalla, Shireen, Ducharme, Stephen, Dowben, P. A., Robertson, Lee, Fridkin, V. M., Palto, S. P., Petukhova, N.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 346 KB

english, 1999

31

High birefringence and wide nematic range bis-tolane liquid crystals

Wu, Shin-Tson, Hsu, C.-S., Shyu, K.-F.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 325 KB

english, 1999

32

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

Bertram, F., Riemann, T., Christen, J., Kaschner, A., Hoffmann, A., Thomsen, C., Hiramatsu, K., Shibata, T., Sawaki, N.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 445 KB

english, 1999

33

Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation

Komuro, Shuji, Katsumata, Tooru, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 269 KB

english, 1999

34

Hotspot mixing: A framework for heterodyne mixing in superconducting hot-electron bolometers

Floet, D. Wilms, Miedema, E., Klapwijk, T. M., Gao, J. R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 294 KB

english, 1999

35

Charge storage in Co nanoclusters embedded in SiO[sub 2] by scanning force microscopy

Schaadt, D. M., Yu, E. T., Sankar, S., Berkowitz, A. E.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 406 KB

english, 1999

36

Band gaps and band offsets in strained GaAs[sub 1−y]Sb[sub y] on InP grown by metalorganic chemical vapor deposition

Peter, M., Herres, N., Fuchs, F., Winkler, K., Bachem, K.-H., Wagner, J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 270 KB

english, 1999

37

Erratum: “Microscopic characterization of hot-electron spreading and trapping in SiO[sub 2] films using ballistic electron emission microscopy” [Appl. Phys. Lett. 73, 1871 (1998)]

Kaczer, B., Im, H.-J., Pelz, J. P., Wallace, R. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 209 KB

english, 1999

38

The contribution of vacancies to carbon out-diffusion in silicon

Scholz, R. F., Werner, P., Gösele, U., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 270 KB

english, 1999

39

Demonstration of microwave generation by a ferroelectric-cathode tube

Drori, R., Einat, M., Shur, D., Jerby, E., Rosenman, G., Advani, R., Temkin, R. J., Pralong, C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 252 KB

english, 1999

40

Dielectric properties of fullerene films

Su, J. S., Chen, Y. F., Chiu, K. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 244 KB

english, 1999

41

Extended x-ray absorption fine structure study on the cerium(IV)-induced DNA hydrolysis: Implication to the roles of 4f orbitals in the catalysis

Shigekawa, Hidemi, Ishida, Masahiko, Miyake, Koji, Shioda, Ryu, Iijima, Yoshitoki, Imai, Takamitsu, Takahashi, Hideyuki, Sumaoka, Jun, Komiyama, Makoto

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 273 KB

english, 1999

42

“Compliant” twist-bonded GaAs substrates: The potential role of pinholes

Kopperschmidt, P., Senz, St., Scholz, R., Gösele, U.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 872 KB

english, 1999

43

Experimental observation of two-dimensional electron gas in the CdS quantum wells of CdS/ZnSe heterostructures

Kažukauskas, V., Grün, M., Petillon, St., Storzum, A., Klingshirn, C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 315 KB

english, 1999

44

Tailoring of electron energy distributions in low-pressure inductive discharges

Haas, F. A., Braithwaite, N. St. J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 361 KB

english, 1999

45

Nanometer patterning of epitaxial CoSi[sub 2]/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Zhao, Q. T., Klinkhammer, F., Dolle, M., Kappius, L., Mantl, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 604 KB

english, 1999

46

Ultraviolet emission of silicon quantum tips

Zheng, W. H., Xia, Jian-bai, Lam, S. D., Cheah, K. W., Rakhshandehroo, M. R., Pang, S. W.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 422 KB

english, 1999

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