Volume 75; Issue 16

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Applied Physics Letters
Volume 75; Issue 16

Applied Physics Letters

Volume 75; Issue 16

1

Coherence based contrast enhancement in x-ray radiography with a photoelectron microscope

Hwu, Y., Lai, B., Mancini, D. C., Je, J. H., Noh, D. Y., Bertolo, M., Tromba, G., Margaritondo, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 719 KB

english, 1999

2

The role of oxygen on the stability of gettering of metals to cavities in silicon

Williams, J. S., Conway, M. J., Wong-Leung, J., Deenapanray, P. N. K., Petravic, M., Brown, R. A., Eaglesham, D. J., Jacobson, D. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 427 KB

english, 1999

3

Violet/blue light-emitting cerium silicates

Choi, Won Chel, Lee, Ho Nyung, Kim, Eun Kyu, Kim, Yong, Park, Chong-Yun, Kim, Hong Seung, Lee, Jeong Yong

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 576 KB

english, 1999

4

Conductance spikes in single-walled carbon nanotube field-effect transistor

Liu, Kun, Burghard, Marko, Roth, Siegmar, Bernier, Partrick

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 450 KB

english, 1999

5

Stress measurements using ultraviolet micro-Raman spectroscopy

Dombrowski, K. F., De Wolf, I., Dietrich, B.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 245 KB

english, 1999

6

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

LuÌscher, S., Fuhrer, A., Held, R., Heinzel, T., Ensslin, K., Wegscheider, W.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 378 KB

english, 1999

7

Possible cooling by resonant Fowler-Nordheim emission

Korotkov, Alexander N., Likharev, Konstantin K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 293 KB

english, 1999

8

Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Kozodoy, Peter, Smorchkova, Yulia P., Hansen, Monica, Xing, Huili, DenBaars, Steven P., Mishra, Umesh K., Saxler, A. W., Perrin, R., Mitchel, W. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 277 KB

english, 1999

9

Intermixing in quantum-dot ensembles with sharp adjustable shells

Fafard, S., Allen, C. NÄ±Ì.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 267 KB

english, 1999

10

Time-resolved soft x-ray absorption spectroscopy of silicon using femtosecond laser plasma x rays

Nakano, Hidetoshi, Goto, Yoshinori, Lu, Peixiang, Nishikawa, Tadashi, Uesugi, Naoshi

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 308 KB

english, 1999

11

Domain structure of magnetic layers deposited on patterned silicon

Landis, S., Rodmacq, B., Dieny, B., Dal’Zotto, B., Tedesco, S., Heitzmann, M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 534 KB

english, 1999

12

Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

Chien, F. S.-S., Wu, C.-L., Chou, Y.-C., Chen, T. T., Gwo, S., Hsieh, W.-F.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 633 KB

english, 1999

13

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

Saarinen, K., Nissilä, J., Hautojärvi, P., Likonen, J., Suski, T., Grzegory, I., Lucznik, B., Porowski, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 235 KB

english, 1999

14

Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip

Lu, Y. F., Mai, Z. H., Qiu, G., Chim, W. K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 934 KB

english, 1999

15

Damage nucleation and vacancy-induced structural transformation in Si grain boundaries

Maiti, A., Pantelides, S. T., Chisholm, M. F., Pennycook, S. J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 389 KB

english, 1999

16

High-displacement spiral piezoelectric actuators

Mohammadi, F., Kholkin, A. L., Jadidian, B., Safari, A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

17

Surface micro-roughness and transport properties of Si delta-doped GaAs/In[sub x]Ga[sub 1−x]As/GaAs (0.1≤×≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B

Zervos, M., Elliott, M., Westwood, D. I.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 340 KB

english, 1999

18

Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode

Li, T., Beck, A. L., Collins, C., Dupuis, R. D., Campbell, J. C., Carrano, J. C., Schurman, M. J., Ferguson, I. A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 409 KB

english, 1999

19

In situ video observation of 180° domain kinetics in congruent LiNbO[sub 3] crystals

Gopalan, Venkatraman, Jia, Q. X., Mitchell, T. E.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 407 KB

english, 1999

20

Efficient operation of a high-power X-band traveling wave tube amplifier

Wang, Pingshan, Xu, Zhou, Ivers, James D., Nation, John A., Naqvi, Shahid, Schachter, Levi

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 289 KB

english, 1999

21

Photostimulated luminescence in a rare earth-doped fluorobromozirconate glass ceramic

Edgar, A., Spaeth, J.-M., Schweizer, S., Assmann, S., Newman, P. J., MacFarlane, D. R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 283 KB

english, 1999

22

Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice

Georgiev, Nikolai, Mozume, Teruo

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 289 KB

english, 1999

23

Carrier pocket engineering applied to “strained” Si/Ge superlattices to design useful thermoelectric materials

Koga, T., Sun, X., Cronin, S. B., Dresselhaus, M. S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 539 KB

english, 1999

24

Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography

Geyer, W., Stadler, V., Eck, W., Zharnikov, M., Gölzhäuser, A., Grunze, M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 400 KB

english, 1999

25

Characterization of silicon-silicon bonds on the Si(100) surfaces

Alfonso, Dominic R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

26

Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy

Meoded, T., Shikler, R., Fried, N., Rosenwaks, Y.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 390 KB

english, 1999

27

High-power truncated-inverted-pyramid (Al[sub x]Ga[sub 1−x])[sub 0.5]In[sub 0.5]P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan,

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 327 KB

english, 1999

28

Studies of metal–ferroelectric–GaN structures

Li, W. P., Zhang, R., Zhou, Y. G., Yin, J., Bu, H. M., Luo, Z. Y., Shen, B., Shi, Y., Jiang, R. L., Gu, S. L., Liu, Z. G., Zheng, Y. D., Huang, Z. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 299 KB

english, 1999

29

A two-component phosphor approach for engineering electroluminescence phosphors

Jones, T. C., Park, W., Summers, C. J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 306 KB

english, 1999

30

Red electroluminescence from ZnGaS:Mn thin films

Dimitrova, V., Draeseke, A., Tate, J., Yokoyama, T., Clark, B. L., Keszler, D. A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 288 KB

english, 1999

31

An adjustable oxide-free tunnel junction for vibrational spectroscopy of molecules

Zimmerman, Darin T., Weimer, Michael B., Agnolet, Glenn

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 298 KB

english, 1999

32

Atomic structure and composition of the barrier in the modified interface high-T[sub c] Josephson junction studied by transmission electron microscopy

Wen, J. G., Koshizuka, N., Tanaka, S., Satoh, T., Hidaka, M., Tahara, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 842 KB

english, 1999

33

Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)[sub 1−x]Ti[sub x]O[sub 3] (x=0–0.3) relaxor ferroelectric thin films on LaNiO[sub 3] electrode buffered Si

Lin, C. H., Lee, S. W., Chen, Haydn, Wu, T. B.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 407 KB

english, 1999

34

Strain relaxation of faceted Ge islands on Si(113)

Zhu, Jian-hong, Miesner, C., Brunner, K., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 464 KB

english, 1999

35

Structure determination of nanostructured Ni–Co films by anomalous x-ray scattering

Chow, G. M., Goh, W. C., Hwu, Y. K., Cho, T. S., Je, J. H., Lee, H. H., Kang, H. C., Noh, D. Y., Lin, C. K., Chang, W. D.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 313 KB

english, 1999

36

On field emission from a semiconducting substrate

Waters, Richard, Van Zeghbroeck, Bart

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 251 KB

english, 1999

37

Crystallization kinetics and glass transition of Zr[sub 41]Ti[sub 14]Cu[sub 12.5]Ni[sub 10−x]Fe[sub x]Be[sub 22.5] bulk metallic glasses

Zhuang, Yan Xin, Wang, Wei Hua, Zhang, Yong, Pan, Ming Xiang, Zhao, De Qian

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 250 KB

english, 1999

38

An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime

Xu, N. S., Yu, Z. X., Deng, S. Z., Chen, J., Wu, S. S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 366 KB

english, 1999

39

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

Maximov, M. V., Tsatsul’nikov, A. F., Volovik, B. V., Bedarev, D. A., Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Bert, N. A., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimber

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 496 KB

english, 1999

40

Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis

Garrido, J. A., Sánchez-Rojas, J. L., Jiménez, A., Muñoz, E., Omnes, F., Gibart, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 244 KB

english, 1999

41

Conduction mechanism under quasibreakdown of ultrathin gate oxide

He, Y. D., Guan, Hao, Li, M. F., Cho, Byung Jin, Dong, Zhong

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 252 KB

english, 1999

42

Large-scale synthesis of single crystalline gallium nitride nanowires

Cheng, G. S., Zhang, L. D., Zhu, Y., Fei, G. T., Li, L., Mo, C. M., Mao, Y. Q.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 395 KB

english, 1999

43

Parametric fluorescence in periodically poled silica fibers

Bonfrate, G., Pruneri, V., Kazansky, P. G., Tapster, P., Rarity, J. G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 239 KB

english, 1999

44

Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In[sub 0.2]Ga[sub 0.8]As/GaAs quantum wells

Chen, J. F., Wang, P. Y., Tsai, C. Y., Wang, J. S., Chen, N. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

45

Switching of vertical giant magnetoresistance devices by current through the device

Bussmann, K., Prinz, G. A., Cheng, S.-F., Wang, D.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 433 KB

english, 1999

46

Controlled agglomeration of Tb-doped Y[sub 2]O[sub 3] nanocrystals studied by x-ray absorption fine structure, x-ray excited luminescence, and photoluminescence

Soo, Y. L., Huang, S. W., Kao, Y. H., Chhabra, V., Kulkarni, B., Veliadis, J. V. D., Bhargava, R. N.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 314 KB

english, 1999

47

Controlled Li doping of Si nanowires by electrochemical insertion method

Zhou, G. W., Li, H., Sun, H. P., Yu, D. P., Wang, Y. Q., Huang, X. J., Chen, L. Q., Zhang, Z.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 526 KB

english, 1999

48

Energy spectrum of surface states of lattice-matched In[sub 0.52]Al[sub 0.48]As surface intrinsic-n[sup +] structure

Hwang, J. S., Hwang, W. C., Yang, Z. P., Chang, G. S., Chyi, J. I., Yeh, N. T.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 243 KB

english, 1999

49

Electron energy dependence of metal-oxide-semiconductor degradation

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 281 KB

english, 1999

50

LaNiO[sub 3] buffer layers for high critical current density YBa[sub 2]Cu[sub 3]O[sub 7−δ] and Tl[sub 2]Ba[sub 2]CaCu[sub 2]O[sub 8−δ] films

Carlson, C. M., Parilla, P. A., Siegal, M. P., Ginley, D. S., Wang, Y.-T., Blaugher, R. D., Price, J. C., Overmyer, D. L., Venturini, E. L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 642 KB

english, 1999

51

A low-voltage, low-capacitance, vertical ruthenium–lithium–ruthenium sandwich layer thin-film-edge dispenser field emitter electron source

Hsu, David S. Y., Gray, Henry F.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 402 KB

english, 1999

52

Theory of the charge-transport properties of naphthyl diamine used in organic light-emitting devices

Zhang, R. Q., Lee, C. S., Lee, S. T.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 342 KB

english, 1999

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