Volume 75; Issue 25

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Applied Physics Letters
Volume 75; Issue 25

Applied Physics Letters

Volume 75; Issue 25

1

Tantalum carbide ohmic contacts to n-type silicon carbide

Jang, T., Porter, L. M., Rutsch, G. W. M., Odekirk, B.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 330 KB

english, 1999

2

High-resolution submicron retarding field energy analyzer for low-temperature plasma analysis

Blain, M. G., Stevens, J. E., Woodworth, J. R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 680 KB

english, 1999

3

WS[sub 2] nanotubes as tips in scanning probe microscopy

Rothschild, A., Cohen, S. R., Tenne, R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 653 KB

english, 1999

4

Exchange-bias systems with compensated interfaces

Kiwi, Miguel, MejÄ±Ìa-LoÌpez, JoseÌ, Portugal, Ruben D., RamÄ±Ìrez, Ricardo

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 330 KB

english, 1999

5

Diminished photoluminescence polarization due to exciton ionization in strained Si[sub 1âx]Ge[sub x]/Si(001) quantum wells

Miyazaki, T., Fukatsu, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

6

Efficient route to large arrays of CN[sub x] nanofibers by pyrolysis of ferrocene/melamine mixtures

Terrones, M., Terrones, H., Grobert, N., Hsu, W. K., Zhu, Y. Q., Hare, J. P., Kroto, H. W., Walton, D. R. M., Kohler-Redlich, Ph., RuÌhle, M., Zhang, J. P., Cheetham, A. K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 698 KB

english, 1999

7

Vacuum ultraviolet absorption spectroscopy employing a microdiacharge hollow-cathode lamp for absolute density measurements of hydrogen atoms in reactive plasmas

Takashima, Seigou, Hori, Masaru, Goto, Toshio, Kono, Akihiro, Ito, Masafumi, Yoneda, Katsumi

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 314 KB

english, 1999

8

Growth of Si/3CâSiC/Si(100) heterostructures by pulsed supersonic free jets

Ikoma, Y., Endo, T., Watanabe, F., Motooka, T.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 678 KB

english, 1999

9

Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

Arzberger, M., Käsberger, U., Böhm, G., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 276 KB

english, 1999

10

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al[sub 2]O[sub 3] thin films on Si(100)

Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., Hegde, R. I., Baumvol, I. J. R., Parsons, G. N.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 323 KB

english, 1999

11

Temperature- and oxygen partial pressure-dependent electrical conductivity in nanoporous rutile and anatase

T. Dittrich, J. Weidmann, F. Koch, I. Uhlendorf, I. Lauermann

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 242 KB

english, 1999

12

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

Choopun, S., Vispute, R. D., Noch, W., Balsamo, A., Sharma, R. P., Venkatesan, T., Iliadis, A., Look, D. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 517 KB

english, 1999

13

THz emission from coherently controlled photocurrents in GaAs

Côté, D., Fraser, J. M., DeCamp, M., Bucksbaum, P. H., van Driel, H. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 236 KB

english, 1999

14

Phase jumps and interferometric surface plasmon resonance imaging

Grigorenko, A. N., Nikitin, P. I., Kabashin, A. V.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 447 KB

english, 1999

15

Biexciton photoluminescence in cubic ZnS single crystals

Liem, Nguyen Quang, Quang, Vu Xuan, Thanh, Do Xuan, Lee, Joo In, Viswanath, Annamraju Kasi, Kim, Dongho

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 294 KB

english, 1999

16

Microdischarges with plane cathodes

Biborosch, Leopold D., Bilwatsch, Oliver, Ish-Shalom, Shlomo, Dewald, Eduard, Ernst, Uwe, Frank, Klaus

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 415 KB

english, 1999

17

Correlating the location of structural defects with the electrical failure of multiwalled carbon nanotubes

de Pablo, P. J., Howell, S., Crittenden, S., Walsh, B., Graugnard, E., Reifenberger, R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 455 KB

english, 1999

18

Low-noise submillimeter-wave NbTiN superconducting tunnel junction mixers

Kawamura, Jonathan, Chen, Jian, Miller, David, Kooi, Jacob, Zmuidzinas, Jonas, Bumble, Bruce, LeDuc, Henry G., Stern, Jeff A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 354 KB

english, 1999

19

Light-emitting multifunctional rhenium (I) and ruthenium (II) 2,2[sup ʹ]-bipyridyl complexes with bipolar character

Chan, Wai Kin, Ng, Po King, Gong, Xiong, Hou, Sijian

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 305 KB

english, 1999

20

Defect-related local-electric-field impact on p–n junction parameters

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 297 KB

english, 1999

21

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

Lüerßen, D., Bleher, R., Richter, H., Schimmel, Th., Kalt, H., Rosenauer, A., Litvinov, D., Kamilli, A., Gerthsen, D., Ohkawa, K., Jobst, B., Hommel, D.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 768 KB

english, 1999

22

Low-dielectric-constant cross-linking polymers: Film electrets with excellent charge stability

Schwödiauer, Reinhard, Neugschwandtner, Gerhard S., Bauer-Gogonea, Simona, Bauer, Siegfried, Wirges, Werner

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 302 KB

english, 1999

23

Mechanism of efficient ultraviolet lasing in GaN/AlGaN separate-confinement heterostructures

Bidnyk, S., Lam, J. B., Little, B. D., Kwon, Y. H., Song, J. J., Bulman, G. E., Kong, H. S., Schmidt, T. J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 303 KB

english, 1999

24

Reconstruction of the charge collection probability in a semiconductor device from the derivative of collection efficiency data

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 303 KB

english, 1999

25

Ohmic contact to p-type GaAs using Cu[sub 3]Ge

Aboelfotoh, M. O., Borek, M. A., Narayan, J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 347 KB

english, 1999

26

Air-bridge-structured silicon nanowire and anomalous conductivity

Fujii, Hideo, Kanemaru, Seigo, Matsukawa, Takashi, Itoh, Junji

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 339 KB

english, 1999

27

Low-loss Al-free waveguides for unipolar semiconductor lasers

Sirtori, C., Kruck, P., Barbieri, S., Page, H., Nagle, J., Beck, M., Faist, J., Oesterle, U.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 313 KB

english, 1999

28

Direct far-field observation of surface-plasmon propagation by photoinduced scattering

Velinov, T., Somekh, M. G., Liu, S.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 416 KB

english, 1999

29

Metal–insulator–metal injector for ballistic electron emission spectroscopy

Heer, R., Rakoczy, D., Ploner, G., Strasser, G., Gornik, E., Smoliner, J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 346 KB

english, 1999

30

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Romano, L. T., McCluskey, M. D., Van de Walle, C. G., Northrup, J. E., Bour, D. P., Kneissl, M., Suski, T., Jun, J.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 425 KB

english, 1999

31

Shear piezoelectric coefficients of gallium nitride and aluminum nitride

Muensit, S., Goldys, E. M., Guy, I. L.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 303 KB

english, 1999

32

Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

Klein, P. B., Freitas, J. A., Binari, S. C., Wickenden, A. E.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 232 KB

english, 1999

33

Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy

Toth, M., Phillips, M. R.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 373 KB

english, 1999

34

Room-temperature electroluminescence from erbium-doped porous silicon

Lopez, Herman A., Fauchet, Philippe M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 237 KB

english, 1999

35

Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment

Hill, C. J., Bridger, P. M., Picus, G. S., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 382 KB

english, 1999

36

Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

Brandt, O., Muralidharan, R., Waltereit, P., Thamm, A., Trampert, A., von Kiedrowski, H., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 372 KB

english, 1999

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