Volume 76; Issue 14

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Applied Physics Letters
Volume 76; Issue 14

Applied Physics Letters

Volume 76; Issue 14

1

Observation of Bragg reflection in photonic crystals synthesized from air spheres in a titania matrix

Richel, A., Johnson, N. P., McComb, D. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 523 KB

english, 2000

2

Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy

Ko, H. J., Chen, Y. F., Zhu, Z., Yao, T., Kobayashi, I., Uchiki, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 291 KB

english, 2000

3

Detection of luminescent single ultrasmall silicon nanoparticles using fluctuation correlation spectroscopy

Akcakir, O., Therrien, J., Belomoin, G., Barry, N., Muller, J. D., Gratton, E., Nayfeh, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

4

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

Collet, J., Tharaud, O., Chapoton, A., Vuillaume, D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 527 KB

english, 2000

5

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Lee, Byoung Hun, Kang, Laegu, Nieh, Renee, Qi, Wen-Jie, Lee, Jack C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 367 KB

english, 2000

6

Velocity overshoot onset in nitride semiconductors

Rodrigues, C. G., Freire, V. N., Vasconcellos, A. R., Luzzi, R.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

7

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M., Jimbo, T.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 383 KB

english, 2000

8

Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer

Valcheva, E., Paskova, T., Tungasmita, S., Persson, P. O. Å., Birch, J., Svedberg, E. B., Hultman, L., Monemar, B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 414 KB

english, 2000

9

Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Chu, L., Zrenner, A., Böhm, G., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 243 KB

english, 2000

10

Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation

Craciun, V., Singh, R. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 307 KB

english, 2000

11

Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

Matkin, L. S., Gleeson, H. F., Mach, P., Huang, C. C., Pindak, R., Srajer, G., Pollmann, J., Goodby, J. W., Hird, M., Seed, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 301 KB

english, 2000

12

Enhancement of silicon oxidation rate due to tensile mechanical stress

Yen, Jui-Yuan, Hwu, Jenn-Gwo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 339 KB

english, 2000

13

Selective growth of high quality GaN on Si(111) substrates

Seon, M., Prokofyeva, T., Holtz, M., Nikishin, S. A., Faleev, N. N., Temkin, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 345 KB

english, 2000

14

High-performance blue light-emitting diode based on a binaphthyl-containing polyfluorene

Jiang, Xuezhong, Liu, Sen, Ma, Hong, Jen, Alex K.-Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

15

A catchment model of high electric field conduction in high concentration narrow-gap semiconductors

Rowe, A. C. H., Gatzke, C., Stradling, R. A., Solin, S. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 314 KB

english, 2000

16

Near-field fluorescence imaging by localized field enhancement near a sharp probe tip

Hamann, Hendrik F., Gallagher, Alan, Nesbitt, David J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 636 KB

english, 2000

17

Highly ordered films of quaterthiophene grown by seeded supersonic beams

Iannotta, S., Toccoli, T., Biasioli, F., Boschetti, A., Ferrari, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 512 KB

english, 2000

18

Thermal imaging through ordered bundles of infrared-transmitting silver-halide fibers

Rave, E., Shemesh, D., Katzir, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 324 KB

english, 2000

19

Defect annihilation in AlN thin films by ultrahigh temperature processing

Fan, Z. Y., Rong, G., Newman, N., Smith, David J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 476 KB

english, 2000

20

Influence of molybdenum on the formation of C54 TiSi[sub 2]: Template phenomenon versus grain-size effect

Zhang, S.-L., d’Heurle, F. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 294 KB

english, 2000

21

Thin film characterization by atomic force microscopy at ultrasonic frequencies

Crozier, K. B., Yaralioglu, G. G., Degertekin, F. L., Adams, J. D., Minne, S. C., Quate, C. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 314 KB

english, 2000

22

Polarization of [sup 129]Xe with high power external-cavity laser diode arrays

Zerger, J. N., Lim, M. J., Coulter, K. P., Chupp, T. E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 384 KB

english, 2000

23

Mesoscopic electronic devices made by local oxidation of a titanium film covering gold islands

Vullers, R. J. M., Ahlskog, M., Cannaerts, M., Van Haesendonck, C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 379 KB

english, 2000

24

Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process

Breitschädel, O., Hsieh, J. T., Kuhn, B., Scholz, F., Schweizer, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 401 KB

english, 2000

25

Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si[sub 3]N[sub 4]/n-Si substrates

Pintilie, L., Pentia, E., Pintilie, I., Botila, T.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 358 KB

english, 2000

26

Enhancement of ion extraction from a cold plasma with radio-frequency plasma heating

Ohzu, Akira, Suzuki, Yoji, Maruyama, Yoichiro, Arisawa, Takashi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

27

Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors

Polishchuk, Igor, Hu, Chenming

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 318 KB

english, 2000

28

Spectral diffusion of the exciton transition in a single self-organized quantum dot

Seufert, J., Weigand, R., Bacher, G., Kümmell, T., Forchel, A., Leonardi, K., Hommel, D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 312 KB

english, 2000

29

Electrical and magnetic properties of La[sub 0.5]Sr[sub 0.5]CoO[sub 3] thin films

Luo, G. P., Wang, Y. S., Chen, S. Y., Heilman, A. K., Chen, C. L., Chu, C. W., Liou, Y., Ming, N. B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 252 KB

english, 2000

30

Waveguide ultrasonic force microscopy at 60 MHz

Inagaki, K., Kolosov, O. V., Briggs, G. A. D., Wright, O. B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 282 KB

english, 2000

31

Carrier transport in GaAs/AlAs type-II superlattices under electric field: Switch from X–X to Γ–Γ transfer

Hosoda, M., Ohtani, N., Kuroyanagi, K., Domoto, C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 523 KB

english, 2000

32

Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

Zalm, P. C., van den Berg, J. A., van Berkum, J. G. M., Bailey, P., Noakes, T. C. Q.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 223 KB

english, 2000

33

Dielectric function of aggregates of small metallic particles embedded in host insulating matrix

Grechko, Leonid G., Pustovit, Vitaly N., Whites, Keith W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 243 KB

english, 2000

34

Defect-enhanced solid-state amorphization in Zr[sub 100−x]Al[sub x]/Ni thin-film diffusion couples

Gimbel, M., Schneider, S., Spiecker, E., Seibt, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 268 KB

english, 2000

35

Improved contact performance of GaN film using Si diffusion

Lin, C. F., Cheng, H. C., Chi, G. C., Bu, C. J., Feng, M. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 281 KB

english, 2000

36

Control of color and efficiency of light-emitting diodes based on polyfluorenes blended with hole-transporting molecules

Sainova, D., Miteva, T., Nothofer, H. G., Scherf, U., Glowacki, I., Ulanski, J., Fujikawa, H., Neher, D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 323 KB

english, 2000

37

Dynamic photoluminescence change of porous Si upon exposure to thermoelectrons/D atoms and D[sub 2]O

Wadayama, T., Arigane, T., Hayamizu, K., Shibahara, T., Hino, D., Hatta, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 234 KB

english, 2000

38

Low-dose nitrogen implants in 6H–silicon carbide

Saks, N. S., Agarwal, A. K., Mani, S. S., Hegde, V. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 238 KB

english, 2000

39

Second-harmonic generation from realistic film–substrate interfaces: The effects of strain

Lyubchanskii, I. L., Dadoenkova, N. N., Lyubchanskii, M. I., Rasing, Th., Jeong, Jae-Woo, Shin, Sung-Chul

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 240 KB

english, 2000

40

Epitaxial Y[sub 2]O[sub 3] films grown on Si(111) by pulsed-laser ablation

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 425 KB

english, 2000

41

Metastable phases of cobalt-ironsilicide formed by sequential implantation of Co and Fe in Si (111)

Dézsi, I., Fetzer, Cs., Kiss, M., Pattyn, H., Vantomme, A., Langouche, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

42

Field-effect transistor made of individual V[sub 2]O[sub 5] nanofibers

Kim, G. T., Muster, J., Krstic, V., Park, J. G., Park, Y. W., Roth, S., Burghard, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 678 KB

english, 2000

43

Phase-modulated beams technique for thin photorefractive films characterization

Barmenkov, Yu. O., Kir’yanov, A. V., Starodumov, A. N., Kozhevnikov, N. M., Lemmetyinen, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 342 KB

english, 2000

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