Volume 76; Issue 21

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Applied Physics Letters
Volume 76; Issue 21

Applied Physics Letters

Volume 76; Issue 21

1

Quantitative determination of the magnetization and stray field of a single domain Co/Pt dot with magnetic force microscopy

Lohau, J., Kirsch, S., Carl, A., Wassermann, E. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 323 KB

english, 2000

2

Microlaser made of disordered media

Cao, H., Xu, J. Y., Seelig, E. W., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 458 KB

english, 2000

3

Locally enhanced Raman spectroscopy with an atomic force microscope

Anderson, Mark S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

4

Doping-dependent optical gain in GaN

Ramvall, Peter, Aoyagi, Yoshinobu, Kuramata, Akito, Hacke, Peter, Domen, Kay, Horino, Kazuhiko

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 361 KB

english, 2000

5

Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening

Xie, Qianghua, Brown, J. L., Jones, R. L., Van Nostrand, J. E., Leedy, K. D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 507 KB

english, 2000

6

Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

Shahedipour, F., Wessels, B. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 260 KB

english, 2000

7

A promising pathway to make multiwalled carbon nanotubes

Setlur, A. A., Doherty, S. P., Dai, J. Y., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 717 KB

english, 2000

8

Well-width dependence of the quantum efficiencies of GaN/Al[sub x]Ga[sub 1âx]N multiple quantum wells

Zeng, K. C., Li, J., Lin, J. Y., Jiang, H. X.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 356 KB

english, 2000

9

Silicon nanowires grown on iron-patterned silicon substrates

Gu, Qian, Dang, Haiyan, Cao, Jien, Zhao, Jianhong, Fan, Shoushan

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 551 KB

english, 2000

10

Softening and mode crossing of the lowest-frequency A[sub 1](transverse-optical) phonon in single-crystal PbTiO[sub 3]

Cho, Seong M., Jang, Hyun M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 229 KB

english, 2000

11

Epitaxial Fe (001) micro tiling: Size and interaction effects

Costa-Krämer, J. L., Martı́n, J. I., Menéndez, J. L., Cebollada, A., Anguita, J. V., Briones, F., Vicent, J. L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 326 KB

english, 2000

12

Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

Xu, Dapeng, Yang, Hui, Li, J. B., Zhao, D. G., Li, S. F., Zhuang, S. M., Wu, R. H., Chen, Y., Li, G. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 234 KB

english, 2000

13

Vertical motional narrowing of exciton polaritons in GaN based multiple quantum wells

Malpuech, Guillaume, Kavokin, Alexey

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 337 KB

english, 2000

14

Trajectory overlaps and local magnification in three-dimensional atom probe

Vurpillot, F., Bostel, A., Blavette, D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 512 KB

english, 2000

15

Defect in the circular-circularly rubbed liquid crystal cell with off-center alignment

Zhuang, Zhizhong, Suh, Seong-Woo, Kim, Young Jin, Patel, J. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 369 KB

english, 2000

16

Room-temperature triangular-lattice two-dimensional photonic band gap lasers operating at 1.54 μm

Hwang, Jeong-Ki, Ryu, Han-Youl, Song, Dae-Sung, Han, Il-Young, Song, Hyun-Woo, Park, Hong-Kyu, Lee, Yong-Hee, Jang, Dong-Hoon

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 444 KB

english, 2000

17

Plasma drift and nonuniformity effects in plasma immersion ion implantation

Keidar, M., Monteiro, O. R., Brown, I. G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

18

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

McCartney, M. R., Ponce, F. A., Cai, Juan, Bour, D. P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 425 KB

english, 2000

19

Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements

Grandidier, B., de la Broise, X., Stiévenard, D., Delerue, C., Lannoo, M., Stellmacher, M., Bourgoin, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 412 KB

english, 2000

20

Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

Sanz-Hervás, A., Cho, Soohaeng, Majerfeld, A., Kim, B. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 296 KB

english, 2000

21

An enhanced resolution technique for determination of the distribution of localized states in semiconductors from transient photocurrents

Main, C., Reynolds, S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 299 KB

english, 2000

22

Doping dependence of the Josephson coupling in Bi[sub 2]Sr[sub 2]Ca[sub 1−x]Gd[sub x]Cu[sub 2]O[sub 8+δ] single crystals

Li, X.-G., Zhao, X., Fan, X. J., Sun, X. F., Wu, W. B., Zhang, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 309 KB

english, 2000

23

Cluster formation by barrier discharge in simulated engine exhaust gas at high temperature

Hoard, John W., Kalashnikov, Evgenii V., Szente, Joseph J., Podsiadlik, Diane H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

24

Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source

Schroer, E., Privitera, V., Priolo, F., Napolitani, E., Carnera, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 296 KB

english, 2000

25

Dielectric properties of pulsed-laser-deposited calcium titanate thin films

Hao, Jianhua, Si, Weidong, Xi, X. X., Guo, Ruyan, Bhalla, A. S., Cross, L. E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

26

Atomic force microscopy using an integrated comb-shape electrostatic actuator for high-speed feedback motion

Akiyama, T., Staufer, U., de Rooij, N. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 565 KB

english, 2000

27

Growth oscillation decay rates for control of III–V molecular beam epitaxy near stoichiometry

Owen, J. H. G., Barvosa-Carter, W., Zinck, J. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 517 KB

english, 2000

28

Influence of Cs and Ag metal vapor on output characteristics of a HyBrID copper vapor laser

Ohzu, Akira, Kato, Masaaki, Maruyama, Yoichiro

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 343 KB

english, 2000

29

Thermal stability of IrMn and MnFe exchange-biased magnetic tunnel junctions

Samant, Mahesh G., Lüning, Jan, Stöhr, Joachim, Parkin, Stuart S. P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 311 KB

english, 2000

30

In[sub 0.34]Al[sub 0.66]As[sub 0.85]Sb[sub 0.15]/δ(n[sup +])-InP heterostructure field-effect transistors

Lin, Y. S., Hsu, W. C., Yeh, C. Y., Shieh, H. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 304 KB

english, 2000

31

Trapping levels in nanocrystalline porous silicon

Ciurea, M. L., Drãghici, M., Lazanu, S., Iancu, V., Nassiopoulou, A., Ioannou, V., Tsakiri, V.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

32

Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption

Shtrichman, I., Mizrahi, U., Gershoni, D., Ehrenfreund, E., Maranowski, K. D., Gossard, A. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

33

Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Chen, Y., Schmidt, J., Šiller, L., Barnard, J. C., Palmer, R. E., Burke, T. M., Smith, M. P., Brown, S. J., Ritchie, D. A., Pepper, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 375 KB

english, 2000

34

Acoustic microscope based on magneto-elastic wave phase conjugator

Brysev, A., Krutyansky, L., Pernod, P., Preobrazhensky, V.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 429 KB

english, 2000

35

High duty cycle and continuous terahertz emission from germanium

Bründermann, Erik, Chamberlin, Danielle R., Haller, Eugene E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

36

Epitaxial Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3] thin films synthesized by metal-organic chemical vapor deposition

Bai, G. R., Streiffer, S. K., Baumann, P. K., Auciello, O., Ghosh, K., Stemmer, S., Munkholm, A., Thompson, Carol, Rao, R. A., Eom, C. B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 272 KB

english, 2000

37

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

Monier, C., Pearton, S. J., Chang, P. C., Baca, A. G., Ren, F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 246 KB

english, 2000

38

Ultrahard carbon nanocomposite films

Siegal, M. P., Tallant, D. R., Provencio, P. N., Overmyer, D. L., Simpson, R. L., Martinez-Miranda, L. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 315 KB

english, 2000

39

Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

Li, X., Bohn, P. W., Kim, Jeongyong, White, J. O., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 354 KB

english, 2000

40

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., Temkin, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 275 KB

english, 2000

41

Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

42

Organic light-emitting diodes using an in situ thermally polymerized hole transporting layer

Jiang, Xuezhong, Liu, Sen, Liu, Michelle S., Ma, Hong, Jen, Alex K.-Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 239 KB

english, 2000

43

Correlation between strain and dielectric properties in ZrTiO[sub 4] thin films

Kim, Taeseok, Oh, Jeongmin, Park, Byungwoo, Hong, Kug Sun

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 241 KB

english, 2000

44

Effect of uniaxial stress on the polarization of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films

Lü, Xiaomei, Zhu, Jinsong, Li, Xuelian, Zhang, Zhigang, Zhang, Xuesong, Wu, Di, Yan, Fen, Ding, Yong, Wang, Yening

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 265 KB

english, 2000

45

Nano-icosahedral quasicrystalline phase formation from a supercooled liquid state in Zr–Fe–Ni ternary metallic glass

Saida, Junji, Li, Chunfei, Matsushita, Mitsuhide, Inoue, Akihisa

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

46

Ferroelectric properties of Sr[sub 2]Bi[sub 4]Ti[sub 5]O[sub 18] thin films

Zhang, S. T., Xiao, C. S., Fang, A. A., Yang, B., Sun, B., Chen, Y. F., Liu, Z. G., Ming, N. B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 278 KB

english, 2000

47

The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO[sub 2] interface

Vanheusden, K., Devine, R. A. B.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 273 KB

english, 2000

48

Metal-oxide-silicon diodes on deuterium-implanted silicon substrate

Misra, D., Jarwal, R. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 302 KB

english, 2000

49

Accumulation hole layer in p-GaN/AlGaN heterostructures

Shur, M. S., Bykhovski, A. D., Gaska, R., Yang, J. W., Simin, G., Khan, M. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 389 KB

english, 2000

50

Growth and fabrication with single-walled carbon nanotube probe microscopy tips

Cheung, Chin Li, Hafner, Jason H., Odom, Teri W., Kim, Kyoungha, Lieber, Charles M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 507 KB

english, 2000

51

Stabilization of strained alloy film growth by a difference in atomic mobilities

Spencer, B. J., Voorhees, P. W., Tersoff, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 303 KB

english, 2000

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