Volume 76; Issue 23

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Applied Physics Letters
Volume 76; Issue 23

Applied Physics Letters

Volume 76; Issue 23

1

From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy

Klar, P. J., Gruning, H., Heimbrodt, W., Koch, J., Hohnsdorf, F., Stolz, W., Vicente, P. M. A., Camassel, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 304 KB

english, 2000

2

Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

Zhou, L., Lanford, W., Ping, A. T., Adesida, I., Yang, J. W., Khan, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 274 KB

english, 2000

3

Dependencies of secondary electron yields on work function for metals by electron and ion bombardment

Kudo, M., Sakai, Y., Ichinokawa, T.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 344 KB

english, 2000

4

The benzene molecule as a molecular resonant-tunneling transistor

Di Ventra, M., Pantelides, S. T., Lang, N. D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 263 KB

english, 2000

5

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

Garrido, J. A., Foutz, B. E., Smart, J. A., Shealy, J. R., Murphy, M. J., Schaff, W. J., Eastman, L. F., MunÌoz, E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

6

Improved temperature performance of Al[sub 0.33]Ga[sub 0.67]As/GaAs quantum-cascade lasers with emission wavelength at Î»â11âÎ¼m

Kruck, P., Page, H., Sirtori, C., Barbieri, S., Stellmacher, M., Nagle, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 352 KB

english, 2000

7

Magnetic entropy change in Ni[sub 51.5]Mn[sub 22.7]Ga[sub 25.8] alloy

Hu, Feng-xia, Shen, Bao-gen, Sun, Ji-rong

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 299 KB

english, 2000

8

Simulation of a picosecond laser ablation plasma

Mao, Samuel S., Mao, Xianglei, Greif, Ralph, Russo, Richard E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 352 KB

english, 2000

9

Higher-harmonics generation in tapping-mode atomic-force microscopy: Insights into the tipâsample interaction

Hillenbrand, R., Stark, M., Guckenberger, R.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 604 KB

english, 2000

10

Formation of periodic steps with a unit-cell height on 6HâSiC (0001) surface by HCl etching

Nakamura, Shun-ichi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Tanaka, Satoru, Teraguchi, Nobuaki, Suzuki, Akira

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 843 KB

english, 2000

11

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 Î¼m

Fiore, A., Borri, P., Langbein, W., Hvam, J. M., Oesterle, U., HoudreÌ, R., Stanley, R. P., Ilegems, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 302 KB

english, 2000

12

Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications

Lee, Hoo-Jeong, Cornella, Guido, Bravman, John C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 397 KB

english, 2000

13

Model for decomposition and nanocrystallization of deeply undercooled Zr[sub 41.2]Ti[sub 13.8]Cu[sub 12.5]Ni[sub 10]Be[sub 22.5]

Löffler, Jörg F., Johnson, William L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 266 KB

english, 2000

14

Characterization of threading dislocations in GaN epitaxial layers

Hino, T., Tomiya, S., Miyajima, T., Yanashima, K., Hashimoto, S., Ikeda, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 323 KB

english, 2000

15

Strained InGaAs/AlGaAs/GaAs-quantum cascade lasers

Gianordoli, S., Schrenk, W., Hvozdara, L., Finger, N., Strasser, G., Gornik, E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 478 KB

english, 2000

16

Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant

Pozina, G., Bergman, J. P., Monemar, B., Yamaguchi, S., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 420 KB

english, 2000

17

Thermally induced local gain suppression in vertical-cavity surface-emitting lasers

Degen, C., Fischer, I., Elsäßer, W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 344 KB

english, 2000

18

Transient characteristics of self-phase modulation in liquid crystals

Ono, Hiroshi, Kikuhara, Junichi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

19

Double fitting of Maker fringes to characterize near-surface and bulk second-order nonlinearities in poled silica

Qiu, Mingxin, Vilaseca, Ramon, Botey, Muriel, Sellarès, Jordi, Pi, Francesc, Orriols, Gaspar

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

20

Polarized blue light-emission from epitaxially oriented bis(phenyloxazolyl)benzene crystals

Yamada, Yuya, Yanagi, Hisao

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 471 KB

english, 2000

21

Nano-oxidation of silicon surfaces by noncontact atomic-force microscopy: Size dependence on voltage and pulse duration

Calleja, Montserrat, Garcı́a, Ricardo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 401 KB

english, 2000

22

High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

Mukai, Kohki, Nakata, Yoshiaki, Otsubo, Koji, Sugawara, Mitsuru, Yokoyama, Naoki, Ishikawa, Hiroshi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

23

Saturation magnetization and uniaxial magnetocrystalline anisotropy for Co-based binary and Co–Ge–Cr ternary alloys

Takahashi, M., Shoji, H., Kadowaki, S., Djayaprawira, D. D., Komori, Y., Domon, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 451 KB

english, 2000

24

Power dependence of the injection lock band of angled-grating distributed feedback lasers

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 290 KB

english, 2000

25

Propagation of femtosecond optical pulses through uncoated and metal-coated near-field fiber probes

Müller, Roland, Lienau, Christoph

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 569 KB

english, 2000

26

Effect of interfacial strain on critical temperature of YBa[sub 2]Cu[sub 3]O[sub 7−δ] thin films

Zhai, H. Y., Chu, W. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 407 KB

english, 2000

27

Nickel-platinum alloy monosilicidation-induced defects in n-type silicon

Chi, D. Z., Mangelinck, D., Dai, J. Y., Lahiri, S. K., Pey, K. L., Ho, C. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 443 KB

english, 2000

28

Three-dimensional photonic band gap structure of a polymer-metal composite

Zhou, Ji, Zhou, Y., Ng, S. L., Zhang, H. X., Que, W. X., Lam, Y. L., Chan, Y. C., Kam, C. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 586 KB

english, 2000

29

Origin of preferential orthorhombic twinning in SrRuO[sub 3] epitaxial thin films

Maria, Jon-Paul, McKinstry, H. L., Trolier-McKinstry, S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 451 KB

english, 2000

30

Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

Gu, Shulin, Zhang, Rong, Sun, Jingxi, Zhang, Ling, Kuech, T. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 305 KB

english, 2000

31

Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering

Jadwisienczak, W. M., Lozykowski, H. J., Perjeru, F., Chen, H., Kordesch, M., Brown, I. G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 252 KB

english, 2000

32

Ferroelectricity and electronic defect characteristics of c-oriented Sr[sub 0.25]Ba[sub 0.75]Nb[sub 2]O[sub 6] thin films deposited on Si substrates

Yang, Y. S., Ryu, M. K., Joo, H. J., Lee, S. H., Lee, S. J., Kang, K. Y., Jang, M. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 250 KB

english, 2000

33

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

Kaschner, A., Hoffmann, A., Thomsen, C., Bertram, F., Riemann, T., Christen, J., Hiramatsu, K., Sone, H., Sawaki, N.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 417 KB

english, 2000

34

Investigation of β-SiC precipitation in Si[sub 1−y]C[sub y] epilayers by x-ray scattering at grazing incidence

Kovats, Z., Metzger, T. H., Peisl, J., Stangl, J., Mühlberger, M., Zhuang, Y., Schäffler, F., Bauer, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 259 KB

english, 2000

35

Relationship between segregation-induced intergranular fracture and melting in the nickel–sulfur system

Heuer, J. K., Okamoto, P. R., Lam, N. Q., Stubbins, J. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 340 KB

english, 2000

36

Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

Kalyanaraman, R., Haynes, T. E., Venezia, V. C., Jacobson, D. C., Gossmann, H.-J., Rafferty, C. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

37

High-T[sub c] superconductor Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub 8+δ] tunnel junction with Zn counterelectrode

Li, Shao-Xiong, Tao, Hong-Jie, Xuan, Yi, Zhao, Bo-Ru, Zhao, Zhong-Xian

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 319 KB

english, 2000

38

Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

Manz, Y. M., Schmidt, O. G., Eberl, K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 366 KB

english, 2000

39

Nanoquasicrystalline phase produced by devitrification of Hf–Pd–Ni–Al metallic glass

Louzguine, D. V., Ko, M. S., Inoue, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 353 KB

english, 2000

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