Volume 76; Issue 8

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Applied Physics Letters
Volume 76; Issue 8

Applied Physics Letters

Volume 76; Issue 8

1

Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H– and 6H–SiC

Waters, Richard, Van Zeghbroeck, Bart

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 424 KB

english, 2000

2

Photoluminescence spectra from Î´-doped barrier layers in modulation-doped InAlAs/InGaAs field-effect transistor structures

Watanabe, Kazuo, Yokoyama, Haruki

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 375 KB

english, 2000

3

Valence band structure of cubic AlGaN/GaN superlattices

Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., Sipahi, G. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 246 KB

english, 2000

4

Accurate determination of quasi-Fermi-level separation of semiconductor lasers

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 353 KB

english, 2000

5

Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si

Miesner, C., RoÌthig, O., Brunner, K., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 281 KB

english, 2000

6

Blue light generation in an external ring cavity using both cavity and grating feedback

Sun, X. G., Switzer, G. W., Carlsten, J. L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

7

Refractive indices and absorption coefficients of Mg[sub x]Zn[sub 1âx]O alloys

Teng, C. W., Muth, J. F., OÌzguÌr, UÌ., Bergmann, M. J., Everitt, H. O., Sharma, A. K., Jin, C., Narayan, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 265 KB

english, 2000

8

Nonlinear optical absorption in undoped and cerium-doped BaTiO[sub 3] thin films using Z-scan technique

Zhang, W. F., Huang, Y. B., Zhang, M. S., Liu, Z. G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 262 KB

english, 2000

9

Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

Hetterich, M., Dawson, M. D., Egorov, A. Yu., Bernklau, D., Riechert, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 371 KB

english, 2000

10

A model for fatigue in ferroelectric perovskite thin films

Dawber, Matthew, Scott, J. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

11

Comparison of memory effect between YMnO[sub 3] and SrBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films deposited on Si substrates

H. N. Lee, Y. T. Kim, S. H. Choh

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

12

Strongly enhanced Tb luminescence from titania xerogel solids mesoscopically confined in porous anodic alumina

Gaponenko, N. V., Davidson, J. A., Hamilton, B., Skeldon, P., Thompson, G. E., Zhou, X., Pivin, J. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

13

An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN

Hou, Y. T., Teo, K. L., Li, M. F., Uchida, Kazuo, Tokunaga, Hiroki, Akutsu, Nakao, Matsumoto, Koh

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 303 KB

english, 2000

14

Many-body effects on excitons properties in GaN/AlGaN quantum wells

Traetta, Giampiero, Cingolani, Roberto, Di Carlo, Aldo, Della Sala, Fabio, Lugli, Paolo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 301 KB

english, 2000

15

The elastic constants of single crystal β-Si[sub 3]N[sub 4]

Vogelgesang, R., Grimsditch, M., Wallace, J. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 288 KB

english, 2000

16

Epitaxial growth of AlN and Al[sub 0.5]Ga[sub 0.5]N layers on aluminum nitride substrates

Schowalter, L. J., Shusterman, Y., Wang, R., Bhat, I., Arunmozhi, G., Slack, G. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 370 KB

english, 2000

17

Compositionally step-varied (Pb, Ca)TiO[sub 3] thin films with enhanced dielectric and ferroelectric properties

Bao, Dinghua, Zhang, Liangying, Yao, Xi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 392 KB

english, 2000

18

Strongly reduced bias dependence in spin–tunnel junctions obtained by ultraviolet light assisted oxidation

Boeve, H., Girgis, E., Schelten, J., De Boeck, J., Borghs, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

19

Ductile quasicrystalline alloys

Inoue, A., Zhang, T., Chen, M. W., Sakurai, T., Saida, J., Matsushita, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 614 KB

english, 2000

20

Blue emitting Sr[sub 2]Ga[sub 2]S[sub 5]:Ce phosphor thin films grown by multisource deposition

Okamoto, Shinji, Tanaka, Kastu, Inoue, Youji

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

21

Oxygen-deficiency-activated charge ordering in La[sub 2/3]Sr[sub 1/3]MnO[sub 3−δ] thin films

Li, J., Ong, C. K., Liu, J.-M., Huang, Q., Wang, S. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 510 KB

english, 2000

22

Spatially localized dynamic properties of individual interfaces in semiconducting oxides

Huey, Bryan D., Bonnell, Dawn A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 422 KB

english, 2000

23

Erratum: “High-T[sub c] second-order gradiometer for magnetocardiography in an unshielded environment” [Appl. Phys. Lett. 75, 1979 (1999)]

Kouznetsov, K. A., Borgmann, J., Clarke, John

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 273 KB

english, 2000

24

Determination of the concentration of hot-carrier-induced bulk defects in laser-recrystallized polysilicon thin film transistors

Brown, T. M., Migliorato, P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 313 KB

english, 2000

25

Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

Sopanen, M., Xin, H. P., Tu, C. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 342 KB

english, 2000

26

Peculiar noise properties of phonons generated by femtosecond laser pulses in antimony

Misochko, O. V., Kisoda, K., Sakai, K., Nakashima, S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

27

Effect of current crowding on vacancy diffusion and void formation in electromigration

Tu, K. N., Yeh, C. C., Liu, C. Y., Chen, Chih

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 356 KB

english, 2000

28

Room-temperature observation of the Coulomb blockade effects in Al two-terminal diodes fabricated using a focused ion-beam nanoparticle process

Kim, T. W., Kang, S. O., Choo, D. C., Shim, J. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 290 KB

english, 2000

29

Efficient n-type doping of diamond using surfactant-mediated epitaxial growth

Yu, Byung Deok, Miyamoto, Yoshiyuki, Sugino, Osamu

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 234 KB

english, 2000

30

Mapping the fluorescence yield on turbid media

Qu, Jianan Y., Huang, Zhijian, Hua, Jianwen

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 437 KB

english, 2000

31

The initial stages of growth of CuPt[sub B] ordered Ga[sub 0.52]In[sub 0.48]P/GaAs and Ga[sub 0.47]In[sub 0.53]As/InP

Hanna, Mark C., Cheong, Hyeonsik M., Mascarenhas, Angelo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 407 KB

english, 2000

32

Bulk and surface recombination in InAs/AlAs[sub 0.16]Sb[sub 0.84] 3.45 μm light emitting diodes

Kane, M. J., Braithwaite, G., Emeny, M. T., Lee, D., Martin, T., Wright, D. R.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 345 KB

english, 2000

33

Arsenic impurities in GaN

Van de Walle, Chris G., Neugebauer, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

34

Microvolume field-effect pH sensor for the scanning probe microscope

Manalis, S. R., Cooper, E. B., Indermuhle, P. F., Kernen, P., Wagner, P., Hafeman, D. G., Minne, S. C., Quate, C. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 350 KB

english, 2000

35

Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes

Misra, M., Sampath, A. V., Moustakas, T. D.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 310 KB

english, 2000

36

Optical absorption and anomalous photoconductivity in undoped n-type GaN

Chung, S. J., Jeong, M. S., Cha, O. H., Hong, C.-H., Suh, E.-K., Lee, H. J., Kim, Y. S., Kim, B. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 291 KB

english, 2000

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