Volume 77; Issue 10

Applied Physics Letters

Volume 77; Issue 10
5

Thermal expansion of bulk and homoepitaxial GaN

Year:
2000
Language:
english
File:
PDF, 313 KB
english, 2000
7

Infrared absorption peak due to Ta=O bonds in Ta[sub 2]O[sub 5] thin films

Year:
2000
Language:
english
File:
PDF, 275 KB
english, 2000
14

Hydrogen passivation of deep levels in n–GaN

Year:
2000
Language:
english
File:
PDF, 246 KB
english, 2000
17

Maximized sp[sup 3] bonding in carbon nitride phases

Year:
2000
Language:
english
File:
PDF, 299 KB
english, 2000
18

Probing the near fields of the super-resolution near-field optical structure

Year:
2000
Language:
english
File:
PDF, 643 KB
english, 2000
20

Bilayer quantum transistor

Year:
2000
Language:
english
File:
PDF, 362 KB
english, 2000
24

High-performance all-polymer integrated circuits

Year:
2000
Language:
english
File:
PDF, 404 KB
english, 2000
37

Sm–Co–Cu–Ti high-temperature permanent magnets

Year:
2000
Language:
english
File:
PDF, 343 KB
english, 2000
43

Lateral epitaxy overgrowth of GaN with NH[sub 3] flow rate modulation

Year:
2000
Language:
english
File:
PDF, 563 KB
english, 2000
48

Ion-beam-induced porosity of GaN

Year:
2000
Language:
english
File:
PDF, 459 KB
english, 2000