Volume 77; Issue 2

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Applied Physics Letters
Volume 77; Issue 2

Applied Physics Letters

Volume 77; Issue 2

1

Edge pinning effect in single- and three-layer patterns

Popkov, A. F., Savchenko, L. L., Vorotnikova, N. V., Tehrani, S., Shi, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

2

Uniaxial anisotropy and switching behavior in epitaxial CrO2 films

Yang, F. Y., Chien, C. L., Ferrari, E. F., Li, X. W., Xiao, Gang, Gupta, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

3

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., Mishra, U. K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 348 KB

english, 2000

4

Evaluation of Schottky contact parameters in metalâsemiconductorâmetal photodiode structures

Averine, S., Chan, Y. C., Lam, Y. L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 319 KB

english, 2000

5

Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Eliseev, P. G., Li, H., Stintz, A., Liu, G. T., Newell, T. C., Malloy, K. J., Lester, L. F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 285 KB

english, 2000

6

Modal gain and internal optical mode loss of a quantum dot laser

Herrmann, E., Smowton, P. M., Summers, H. D., Thomson, J. D., Hopkinson, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 257 KB

english, 2000

7

Photonic band gaps and flat band edges in periodically textured metallic microcavities

Salt, M. G., Tan, W. C., Barnes, W. L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 591 KB

english, 2000

8

Room-temperature operation at 333 nm of Al[sub 0.03]Ga[sub 0.97]N/Al[sub 0.25]Ga[sub 0.75]N quantum-well light-emitting diodes with Mg-doped superlattice layers

Kinoshita, A., Hirayama, H., Ainoya, M., Aoyagi, Y., Hirata, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 252 KB

english, 2000

9

Laser emission from quantum dots in microdisk structures

Michler, P., Kiraz, A., Zhang, Lidong, Becher, C., Hu, E., Imamoglu, A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

10

Mg-doped Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin films for tunable microwave applications

Joshi, P. C., Cole, M. W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 360 KB

english, 2000

11

Dynamically stable growth of strained-layer superlattices

Shilkrot, L. E., Srolovitz, D. J., Tersoff, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 282 KB

english, 2000

12

In situ observation of nucleation and subsequent growth of clusters in silane radio frequency discharges

K. Koga, Y. Matsuoka, K. Tanaka, M. Shiratani, Y. Watanabe

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 223 KB

english, 2000

13

Flexible microdischarge arrays: Metal/polymer devices

S. Park, C. J. Wagner, C. M. Herring, J. G. Eden

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 296 KB

english, 2000

14

Low-loss one-dimensional metallodielectric photonic crystals fabricated by metallic insertions in a multilayer dielectric structure

Ye, Yong-Hong, Bader, Georges, Truong, Vo-Van

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 278 KB

english, 2000

15

Decay dynamics of visible luminescence in amorphous silicon nanoparticles

Kanemitsu, Yoshihiko, Fukunishi, Yunosuke, Kushida, Takashi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

16

Spatially selective materials deposition by hydrogen-assisted laser-induced transfer

Toet, D., Smith, P. M., Sigmon, T. W., Thompson, Michael O.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 490 KB

english, 2000

17

Dominant iron gettering mechanism in p/p[sup +] silicon wafers

Lin, Wen, Benton, J. L., Pinacho, R., Ramappa, D. A., Henley, W.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

18

Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues

Sakamoto, T., Manako, S., Fujita, J., Ochiai, Y., Baba, T., Yamamoto, H., Teshima, T.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

19

Monolithic active mode locking of quantum cascade lasers

Paiella, Roberto, Capasso, Federico, Gmachl, Claire, Hwang, Harold Y., Sivco, Deborah L., Hutchinson, Albert L., Cho, Alfred Y., Liu, H. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 389 KB

english, 2000

20

Green II–VI light emitting diodes with long lifetime on InP substrate

Faschinger, W., Nürnberger, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 292 KB

english, 2000

21

Quasimagnetic clusters in icosahedral Al–Pd–Mn system

Nimori, Shigeki, Tsai, An Pang

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

22

Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata

Orlov, Alexei O., Amlani, Islamshah, Kummamuru, Ravi K., Ramasubramaniam, Rajagopal, Toth, Geza, Lent, Craig S., Bernstein, Gary H., Snider, Gregory L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 465 KB

english, 2000

23

Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe[sub 2] thin films grown by molecular beam epitaxy

Yoshino, Kenji, Maruoka, Daisuke, Ikari, Tetsuo, Fons, Paul J., Niki, Shigeru, Yamada, Akimasa

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 301 KB

english, 2000

24

Strong enhancement of second-order response coefficients in tellurium containing Ag–III–VI[sub 2] compounds

Rashkeev, Sergey N., Lambrecht, Walter R. L.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 293 KB

english, 2000

25

Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface

Miura, Yoshinao, Ono, Haruhiko, Ando, Koichi

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 299 KB

english, 2000

26

Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition

Yang, Q., Scott, D. S., Chung, T., Stillman, G. E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 292 KB

english, 2000

27

Confinement of phonons in InGaAs/InP superlattices

Shin, H. K., Lockwood, D. J., Poole, P. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 313 KB

english, 2000

28

Heavy photon dispersions in photonic crystal waveguides

Astratov, V. N., Stevenson, R. M., Culshaw, I. S., Whittaker, D. M., Skolnick, M. S., Krauss, T. F., De La Rue, R. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 557 KB

english, 2000

29

A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process

El-Bahar, A., Nemirovsky, Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 578 KB

english, 2000

30

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Pan, Z., Li, L. H., Zhang, W., Lin, Y. W., Wu, R. H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 318 KB

english, 2000

31

Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

Heera, V., Fontaine, F., Skorupa, W., Pécz, B., Barna, Á.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 614 KB

english, 2000

32

Vacancies in SiGe: Jahn–Teller distortion and spin effects

Lento, J., Pesola, M., Mozos, J.-L., Nieminen, R. M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 227 KB

english, 2000

33

Quantitative evaluation of growth-induced residual stress in InP epitaxial micromechanical structures

Chitica, N., Strassner, M., Daleiden, J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 358 KB

english, 2000

34

Molecular alignment in submicron patterned polymer matrix using nanoimprint lithography

Wang, Jian, Sun, Xiaoyun, Chen, Lei, Zhuang, Lei, Chou, Stephen Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 329 KB

english, 2000

35

Single-phase hexagonal GaN grown on AlAs/GaAs(001)

Funato, Mitsuru, Ishido, Teruki, Hamaguchi, Atsushi, Fujita, Shizuo, Fujita, Shigeo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 335 KB

english, 2000

36

Highly efficient blue-green emission from organic light-emitting diodes using dibenzochrysene derivatives

Tokito, Shizuo, Noda, Koji, Fujikawa, Hisayoshi, Taga, Yasunori, Kimura, Makoto, Shimada, Kou, Sawaki, Yasuhiko

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

37

Structure variation of intersubband electron–acoustic phonon scattering rate in coupled quantum wells

Požela, K., Naran, S. B., Leburton, J.-P., Heyman, J. N.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 240 KB

english, 2000

38

Improvement of the interface quality during thermal oxidation of Al[sub 0.98]Ga[sub 0.02]As layers due to the presence of low-temperature-grown GaAs

Ferrer, J. C., Liliental-Weber, Z., Reese, H., Chiu, Y. J., Hu, E.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 434 KB

english, 2000

39

Study of the crystalline quality of exfoliated surfaces in hydrogen-implanted silicon

Breese, M. B. H., Alves, L. C., Hoechbauer, T., Nastasi, M.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 435 KB

english, 2000

40

Fabrication of high-magnetoresistance tunnel junctions using Co[sub 75]Fe[sub 25] ferromagnetic electrodes

Han, Xiu-Feng, Oogane, Mikihiko, Kubota, Hitoshi, Ando, Yasuo, Miyazaki, Terunobu

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 246 KB

english, 2000

41

Configurations of misfit dislocations at interfaces of lattice-matched Ga[sub 0.5]In[sub 0.5]P/GaAs heterostructures

Wang, Y. Q., Wang, Z. L., Brown, T., Brown, A., May, G.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 695 KB

english, 2000

42

Drastic increase of the density of Ge islands by capping with a thin Si layer

Usami, N., Miura, M., Ito, Y., Araki, Y., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 726 KB

english, 2000

43

Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

Appenzeller, J., Martel, R., Solomon, P., Chan, K., Avouris, Ph., Knoch, J., Benedict, J., Tanner, M., Thomas, S., Wang, K. L., del Alamo, J. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 612 KB

english, 2000

44

Electron energy-loss spectrometry on lithiated graphite

Hightower, A., Ahn, C. C., Fultz, B., Rez, P.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 302 KB

english, 2000

45

Interplay between segregation, roughness, and local strains in the growth of Ga[sub 0.75]In[sub 0.25]P alloy

Wallart, X., Priester, C., Deresmes, D., Mollot, F.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 790 KB

english, 2000

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