Volume 79; Issue 13

Applied Physics Letters

Volume 79; Issue 13
5

Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry

Year:
2001
Language:
english
File:
PDF, 412 KB
english, 2001
11

Carrier localization and the origin of luminescence in cubic InGaN alloys

Year:
2001
Language:
english
File:
PDF, 500 KB
english, 2001
13

Tailoring of self-assembled monolayer for polymer light-emitting diodes

Year:
2001
Language:
english
File:
PDF, 274 KB
english, 2001
21

Removable template route to metallic nanowires and nanogaps

Year:
2001
Language:
english
File:
PDF, 558 KB
english, 2001
24

As-grown superconducting MgB[sub 2] thin films prepared by molecular beam epitaxy

Year:
2001
Language:
english
File:
PDF, 307 KB
english, 2001
45

Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode

Year:
2001
Language:
english
File:
PDF, 235 KB
english, 2001
49

Importance of quadrupolar ordering in antiferroelectric liquid crystal devices

Year:
2001
Language:
english
File:
PDF, 297 KB
english, 2001