Volume 34; Issue 2

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Russian Microelectronics
Volume 34; Issue 2

Russian Microelectronics

Volume 34; Issue 2

1

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

I. S. Vasil’evskii, G. B. Galiev, G. V. Ganin, R. M. Imamov, E. A. Klimov, A. A. Lomov, V. G. Mokerov, V. V. Saraikin, M. A. Chuev

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 132 KB

english, 2005

2

IPL resistless lithography as a method for delta-doping of monocrystalline semiconductors by Al and Sb implantation

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 111 KB

english, 2005

3

Diffraction ellipsometric measurement of step height on wafer surfaces

E. S. Gornev, E. S. Lonskii

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 108 KB

english, 2005

4

Theory of the vacuum nanotriode, part 1: Explaining the results of an experiment

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 146 KB

english, 2005

5

Lifetime prediction for submicrometer LSI circuits and programmable logic: An overview

A. V. Strogonov

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 162 KB

english, 2005

6

Borophosphosilicate glass films in silicon microelectronics, part 2: Structure and applications

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005