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Volume 40; Issue 8
Main
Russian Microelectronics
Volume 40; Issue 8
Russian Microelectronics
Volume 40; Issue 8
1
Conditions for the formation of defectless quantum dots in the theoretical estimation of InxGa1 −xAs/GaAs heterostructures
R. Kh. Akchurin
,
N. T. Vagapova
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 218 KB
Your tags:
english, 2011
2
Pb1 −xSnxTe epitaxial films for terahertz detectors
A. I. Belogorokhov
,
A. A. Konovalov
,
Yu. N. Parkhomenko
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 140 KB
Your tags:
english, 2011
3
Electric properties of (SiC)1 −x(AlN)x/SiC anisotropic heterostructures
B. A. Bilalov
,
M. K. Kurbanov
,
A. A. Gadzhiev
,
Sh. M. Ramazanov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 183 KB
Your tags:
english, 2011
4
Atomic structure and methods for structural investigations how ingot growth conditions of Bi2Te2.7Se0.3solid solutions influence the physical properties of anisotropy
V. T. Bublik
,
A. I. Voronin
,
E. A. Vygovskaya
,
V. F. Ponomarev
,
N. Yu. Tabachkova
,
O. V. Toropova
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 318 KB
Your tags:
english, 2011
5
Optical transmission spectra and electrical properties of langasite and langatate crystals as dependent on growth conditions
O. A. Buzanov
,
N. S. Kozlova
,
E. V. Zabelina
,
A. P. Kozlova
,
N. A. Siminel
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 199 KB
Your tags:
english, 2011
6
The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon
K. L. Enisherlova
,
V. T. Bublik
,
K. D. Shcherbachev
,
M. I. Voronova
,
E. M. Temper
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 955 KB
Your tags:
english, 2011
7
How the edge permeability of a 2D island influences the transition from 2D to 3D growth
S. N. Filimonov
,
Yu. Yu. Hervieu
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 237 KB
Your tags:
english, 2011
8
Approaches to hydrogenation of silicon tetrachloride in polysilicon manufacture
V. M. Ivanov
,
Yu. V. Trubitsin
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 100 KB
Your tags:
english, 2011
9
Spectral and photoelectric parameters of high-voltage multi-junction solar batteries
A. S. Korol’chenko
,
S. A. Legotin
,
S. I. Didenko
,
S. P. Kobeleva
,
M. N. Orlova
,
V. N. Murashev
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 811 KB
Your tags:
english, 2011
10
Effect of the microstructure on the properties of radio-absorbing nickel-zinc ferrites
V. G. Kostishin
,
R. M. Vergazov
,
V. G. Andreev
,
S. B. Bibikov
,
S. V. Podgornaya
,
A. T. Morchenko
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 999 KB
Your tags:
english, 2011
11
On the essence of the high photosensitivity of a-Si:H layered films
I. A. Kurova
,
N. N. Ormont
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 166 KB
Your tags:
english, 2011
12
Activated-process parameters for diamond, silicon, and germanium crystals
M. N. Magomedov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 212 KB
Your tags:
english, 2011
13
Surface structure of nanocomposites based on silicon-carbon matrix revealed by scanning probe microscopy
M. D. Malinkovich
,
Yu. N. Parkhomenko
,
D. S. Polyakov
,
M. L. Shupegin
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 1.89 MB
Your tags:
english, 2011
14
How the modes of operation of light-emitting diodes influence the process of the formation of defects in the area of ap-njunction and the quantum yield drop
F. I. Manyakhin
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 191 KB
Your tags:
english, 2011
15
Internal-getter formation in nitrogen-doped dislocation-free silicon wafers
M. V. Mezhennyi
,
M. G. Mil’vidskii
,
V. Ya. Reznik
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 1.94 MB
Your tags:
english, 2011
16
Structural and electric properties of AlN substrates used for LED Heterostructures’ growth
A. Ya. Polyakov
,
N. B. Smirnov
,
A. V. Govorkov
,
I. A. Belogorokhov
,
K. D. Scherbatchev
,
V. T. Bublik
,
O. A. Avdeev
,
T. Yu. Chemekova
,
E. N. Mokhov
,
S. S. Nagalyuk
,
H. Helava
,
Yu. N. Makarov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 386 KB
Your tags:
english, 2011
17
Modeling and simulating the nucleation of amorphous or crystalline films of diamond-like materials
B. M. Sinel’nikov
,
V. A. Tarala
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 848 KB
Your tags:
english, 2011
18
Hydrogen sorption by carbon nanomaterials
A. V. Timonina
,
D. N. Borisenko
,
V. V. Kveder
,
N. N. Kolesnikov
,
S. K. Brantov
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 920 KB
Your tags:
english, 2011
19
Wide-bandgap compound semiconductors for X- or gamma-ray detectors
V. M. Zaletin
,
V. P. Varvaritsa
Journal:
Russian Microelectronics
Year:
2011
Language:
english
File:
PDF, 1.23 MB
Your tags:
english, 2011
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