Volume 45; Issue 1

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Russian Microelectronics
Volume 45; Issue 1

Russian Microelectronics

Volume 45; Issue 1

1

Effect of a diamond heat spreader on the characteristics of gallium nitride-based transistors

Grishakov, K. S., Elesin, V. F., Kargin, N. I., Ryzhuk, R. V., Minnebaev, S. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 1.29 MB

english, 2016

2

Influence of ionizing radiation on the parameters of an operational amplifier based on complementary bipolar transistors

Dvornikov, O. V., Tchekhovski, V. A., Dziatlau, V. L., Prokopenko, N. N.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 841 KB

english, 2016

3

System-on-chip: Specifics of radiation behavior and estimation of radiation hardness

Kalashnikov, O. A., Nekrasov, P. V., Nikiforov, A. Yu., Telets, V. A., Chukov, G. V., Elesin, V. V.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 689 KB

english, 2016

4

Characteristics of chloride memristors based on nanothick metal films

Rozanov, R. Yu., Kondrashov, V. A., Nevolin, V. K., Chaplygin, Yu. A.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 448 KB

english, 2016

5

Simulation of the spectroscopic response and electron dynamics in a double quantum dot

Tsukanov, A. V., Chekmachev, V. G.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 965 KB

english, 2016

6

Multilayer graphene-based flash memory

Novikov, Yu. N., Gritsenko, V. A., Krasnikov, G. Ya., Orlov, O. M.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 349 KB

english, 2016

7

The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS

Nazarova, G. N., Elesin, V. V., Nikiforov, A. Yu., Kuznetsov, A. G., Usachev, N. A., Amburkin, D. M.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 1.40 MB

english, 2016

8

Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate

Golosov, D. A., Zavadski, S. M., Kolos, V. V., Turtsevich, A. S., Okodzhi, D. E.

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

9

Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

Yu. K. Ezhovskii,N. V. Zakharova

Journal:

Russian Microelectronics

Year:

2016

Language:

english

File:

PDF, 453 KB

english, 2016