Volume 26; Issue 10

Main
Russian Physics Journal
Volume 26; Issue 10

Russian Physics Journal

Volume 26; Issue 10

1

Semiinsulating gallium arsenide for microwave electronics

M. G. Mil'vidskii, V. B. Osvenskii, I. N. Shershakova

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 1.06 MB

english, 1983

2

Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide

Yu. B. Bolkhovityanov, A. F. Kravchenko, S. I. Chikichev

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 1013 KB

english, 1983

3

Impurity trapping during gas-phase epitaxy on gallium arsenide

L. G. Lavrent'eva

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 954 KB

english, 1983

4

Electron structure of bulk centers in gallium arsenide

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 885 KB

english, 1983

5

Deep centers in gallium arsenide associated with intrinsic structural defects

B. I. Boltaks, M. N. Kolotov, E. A. Skoryatina

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 841 KB

english, 1983

6

Gallium arsenide avalanche s-diodes

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 922 KB

english, 1983

7

Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 1.29 MB

english, 1983

8

Defects in Schottky barrier structures

A. P. Vyatkin, N. K. Maksimova

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 1014 KB

english, 1983