Volume 11; Issue 7

Semiconductor Science and Technology

Volume 11; Issue 7

1

Middle infrared study of layered compounds

Fontal, B, López-Rivera, S A, Martínez, L, Giriat, W

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 76 KB

english, 1996

2

Transport properties of n-channel Si/SiGe modulation-doped systems with varied channel thickness: effect of the interface roughness

Yutani, A, Shiraki, Y

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 171 KB

english, 1996

3

Modification of electrical, optical and crystalline properties of chemically deposited CdS films by thermal diffusion of indium and tin

George, P J, Sanchez-Juarez, A, Nair, P K

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 122 KB

english, 1996

4

Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 91 KB

english, 1996

5

Can fractal-like spectra be experimentally observed in aperiodic superlattices?

Maciá, Enrique, Domínguez-Adame, Francisco

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 106 KB

english, 1996

6

Exact block diagonalization of the eight-band Hamiltonian matrix for tetrahedral semiconductors and its application to strained quantum wells

Enders, P, Woerner, M

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 149 KB

english, 1996

7

Growth law of silicon oxides by dry oxidation

Kim, Keunjoo, Lee, Young Hee, An, Myung Hwan, Suh, Moon Suhk, Youn, Chang Joo, Lee, Kee Bang, Lee, Hyung Jae

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 121 KB

english, 1996

8

A general relation between zero-bias resistance - area product and perimeter-to-area ratio of the diodes in variable-area diode test structures

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 137 KB

english, 1996

9

Type conversion of p-(HgCd)Te using and Ar reactive ion etching

Belas, E, Franc, J, Toth, A, Moravec, P, Grill, R, Sitter, H, Höschl, P

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 108 KB

english, 1996

10

Charge transfer and electron mobility in GaAlAs/GaAs modulation-doped heterostructures: the role of interface states

Sibari, H, Raymond, A, Kubisa, M

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 146 KB

english, 1996

11

Quantitative model of phonon-drag imaging experiments

Kershaw, Y M, Bending, S J, Dietsche, W, Eberl, K

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 140 KB

english, 1996

12

Enhanced electron mobility in novel side-gated quantum wire structures

Wirner, C, Momose, H, Hamaguchi, C, Smoliner, J, Köck, A, Gornik, E

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 131 KB

english, 1996

13

Illumination-induced inhomogeneity in the carrier density profile of split gate devices

Hofmann, Holger F, Ishibashi, Koji, Bird, Jonathan P, Aoyagi, Yoshinobu, Sugano, Takuo

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 110 KB

english, 1996

14

Self-aligned cobalt disilicide/silicon Schottky barrier contacts: fabrication, materials and electrical characterization

Woods, N J, Hall, S

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 478 KB

english, 1996

15

Deep donors in tellurium and sulphur codoped GaSb

Hubík, P, Mares, J J, Kristofik, J, Sestáková, V, Stepánek, B

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 134 KB

english, 1996

16

A complex luminescent defect in Be-doped oxygen-rich silicon

Daly, S E, Henry, M O, McGuigan, K G, Carmo, M C do

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 124 KB

english, 1996

17

Non-equilibrium behaviour of spin-resolved quantum transport in tilted magnetic fields

Nachtwei, G, Heide, S, Breitlow, C, Svoboda, P, Streda, P, Cukr, M

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 154 KB

english, 1996

18

Effect of strain on GaN exciton spectra

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 76 KB

english, 1996

19

The phonon-induced drag of charge carriers in heterostructures in weak magnetic fields

Gancza, W M, Jasiukiewicz, Cz, Kent, A J, Lehmann, D, Paszkiewicz, T, Strickland, K R, Strickland, R E

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

20

Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

Malina, V, Moro, L, Micheli, V, Mojzes, I

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 160 KB

english, 1996

21

Photodetection at 3.65 in the atmospheric window using heteroepitaxy

Podlecki, J, Gouskov, L, Pascal, F, Pascal-Delannoy, F, Giani, A

Journal:

Semiconductor Science and Technology

Year:

1996

Language:

english

File:

PDF, 106 KB

english, 1996