Volume 12; Issue 1

Semiconductor Science and Technology

Volume 12; Issue 1

1

Monte Carlo simulation of impact ionization and current multiplication in short GaAs diodes

Dunn, G M, Rees, G J, David, J P R, Plimmer, S A, Herbert, D C

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 242 KB

english, 1997

2

Correlation lengths for scattering potentials in two-dimensional electron gases

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 131 KB

english, 1997

3

The photostability of dye-sensitized solid state photovoltaic cells: factors determining the stability of the pigment in a nanoporous n-/cyanidin/p-CuI cell

Tennakone, K, Kumara, G R R A, Kottegoda, I R M, Wijayantha, K G U

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 101 KB

english, 1997

4

The photoacoustic effect in porous silicon: peculiarities of its manifestation and its application to the investigation of optical and thermal properties of materials

Blonskij, I V, Brodyn, M S, Tkhoryk, V A, Filin, A G, Piryatinskij, Ju P

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 167 KB

english, 1997

5

Observation of resonant Raman lines during the photoluminescence of doped GaN

Dewsnip, D J, Andrianov, A V, Harrison, I, Lacklison, D E, Orton, J W, Morgan, J, Ren, G B, Cheng, T S, Hooper, S E, Foxon, C T

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 90 KB

english, 1997

6

Investigation of recombination parameters in silicon structures by infrared and microwave transient absorption techniques

Gaubas, E, Kaniava, A, Vaitkus, J

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 227 KB

english, 1997

7

Photoluminescence from GaN films grown by MBE on an substrate

Andrianov, A V, Lacklison, D E, Orton, J W, Cheng, T S, Foxon, C T, O'Donnell, K P, Nicholls, J F H

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 106 KB

english, 1997

8

Effect of p and n doping on neutral impurity and dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures

Ooi, B S, Bryce, A C, Marsh, J H, Roberts, J S

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 129 KB

english, 1997

9

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

Bert, N A, Chaldyshev, V V, Faleev, N N, Kunitsyn, A E, Lubyshev, D I, Preobrazhenskii, V V, Semyagin, B R, Tret'yakov, V V

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 272 KB

english, 1997

10

Semiconductor characterization by a new contactless electroreflectance technique employing surface acoustic waves

Fritz, I J, Brennan, T M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 71 KB

english, 1997

11

Envelope-function method for the conduction band in graded heterostructures

Takhtamirov, E E, Volkov, V A

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 184 KB

english, 1997

12

Electron impact ionization in p-type degenerate narrow-gap semiconductors with a Kane band dispersion law

Dmitriev, A V, Evlyukhin, A B

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 137 KB

english, 1997

13

Corrections to the calculation of bulk electron densities in quantum wells of HEMTs

Cole, Eric A B, Boettcher, Tobias, Snowden, Christopher M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 239 KB

english, 1997

14

Tunnel devices are not yet manufacturable

Wilkinson, V A, Kelly, M J, Carr, M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 210 KB

english, 1997

15

Exciton spectra and spin - orbit splitting in GaN epitaxial films

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 83 KB

english, 1997

16

Formation of narrow channels using split back-gates defined by in situ focused ion beam lithography

Iredale, N, Linfield, E H, Rose, P D, Ritchie, D A, Pepper, M, Jones, G A C

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 632 KB

english, 1997

17

X-ray absorption fine structure of ion-implanted semiconductors

Indrea, E, Jaouen, M, Chartier, P

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 109 KB

english, 1997

18

Monte Carlo study of diffusion phenomena in III - V modulation doped heterostructures

Sleiman, A, Thobel, J L, Bourel, P, Dessenne, F, Fauquembergue, R

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 166 KB

english, 1997

19

Dry etching of using chemically assisted ion beam etching

Ping, A T, Khan, M Asif, Adesida, I

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 136 KB

english, 1997

20

Tailored carrier escape rates in asymmetric double quantum wells

Thucydides, G, Barnes, J M, Tsui, E, Barnham, K W J, Phillips, C C, Cheng, T S, Foxon, C T

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 155 KB

english, 1997

21

An electron paramagnetic resonance study of vanadium-related defects in CdTe:V:Zn

Launay, J C, Arnoux, T, Bardeleben, H J von

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 92 KB

english, 1997

22

Quantum interference of electrons transmitted throughout a double-barrier resonant tunnelling structure under a perpendicular magnetic field

Figielski, T, Wosinski, T, Vitusevich, S A, Belyaev, A E, Makosa, A, Dobrowolski, W

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 119 KB

english, 1997

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