Volume 12; Issue 10

Semiconductor Science and Technology

Volume 12; Issue 10

1

Chemical bath deposition of ZnS thin films and modification by air annealing

Arenas, Olga L, Nair, M T S, Nair, P K

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 213 KB

english, 1997

2

The fabrication and characterization of nickel oxide films and their application as contacts to polymer/porous silicon electroluminescent devices

Wakefield, G, Dobson, P J, Foo, Y Y, Loni, A, Simons, A, Hutchison, J L

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 242 KB

english, 1997

3

Effects of radiation damage in silicon p - i - n photodiodes

McPherson, M, Jones, B K, Sloan, T

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 206 KB

english, 1997

4

Nanocrystals of CdSe in thin film matrix

Nesheva, D, Levi, Z

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 90 KB

english, 1997

5

Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP

Malina, V, Vogel, K, Ressel, P, Barnard, W O, Knauer, A

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 562 KB

english, 1997

6

Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials

Hong, J, Lee, J W, MacKenzie, J D, Donovan, S M, Abernathy, C R, Pearton, S J, Zolper, J C

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 1.17 MB

english, 1997

7

A novel GaAs structure for terahertz generators driven by plasma instability

Shiktorov, P, Gruzinskis, V, Starikov, E, Reggiani, L, Varanu, L

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 130 KB

english, 1997

8

Multi-stage annealing of defects in ion-implanted double-barrier diodes

Billen, K, Kelly, M J, Gwilliam, R M, Hutchinson, S, Eaves, L, Henini, M, Foster, T J

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 327 KB

english, 1997

9

Processes occurring during the formation of graded ZnSe/ZnTe contacts on p-ZnSe

Faschinger, W, Nürnberger, J, Kurtz, E, Schmitt, R, Korn, M, Schüll, K, Ehinger, M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 166 KB

english, 1997

10

Redistribution of the quantum well density of states under the influence of an electric field

Lefebvre, Kevin R, Anwar, A F M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

11

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

Masum, J, Hall, T J

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

12

One- and two-dimensional models of the transient response of metal - semiconductor - metal photodetectors including diffraction

Wilson, S P, Walker, A B

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 316 KB

english, 1997

13

A study of super-bandgap time-resolved luminescence in InP

Poles, E, Huppert, D, Rosenwaks, Y

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 157 KB

english, 1997

14

The effect of electron effective mass mismatch on the electron - optical-phonon scattering rate in a quantum well structure

Zheng, Yisong, Lü, Tianquan, Liu, Jiang, Su, Wenhui

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 138 KB

english, 1997

15

Annealing of proton-damaged GaAs and 1/f noise

Chen, X Y, Folter, L C de

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 184 KB

english, 1997

16

Photoluminescence and infrared transmission spectroscopies of

Aufgang, J B, Labrie, D, Olson, K, Paton, B, Simpson, A M, Iseler, G W, Borshchevsky, A

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 174 KB

english, 1997

17

Low-distortion AlGaAs/InGaAs power HFETs with quantum-doped graded-like channels

Lour, W S, Chen, H R, Hung, L T

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

18

Small-signal analysis of semiconductor heterojunctions with interacting interface states

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 202 KB

english, 1997

19

Screening phenomena in quantum wells

Plews, A D, Mattey, N L, Phillips, P J, Parker, E H C, Whall, T E

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 112 KB

english, 1997

20

Magnetic-field induced type I to type II transition in multiple quantum well samples

Klar, P J, Watling, J R, Wolverson, D, Davies, J J, Ashenford, D E, Lunn, B

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 297 KB

english, 1997

21

The electronic transport through ion-implanted double-barrier diodes

Billen, K, Kelly, M J, Gwilliam, R M, Hutchinson, S, Henini, M

Journal:

Semiconductor Science and Technology

Year:

1997

Language:

english

File:

PDF, 312 KB

english, 1997

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