Volume 13; Issue 7

Semiconductor Science and Technology

Volume 13; Issue 7

1

Strong coupling phenomena in quantum microcavity structures

Skolnick, M S, Fisher, T A, Whittaker, D M

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 538 KB

english, 1998

2

Phonon-assisted photoluminescence in wurtzite GaN epilayer

Liu, W, Li, M F, Xu, S J, Uchida, Kazuo, Matsumoto, Koh

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 88 KB

english, 1998

3

Modelling of hole mobilities in heavily doped strained SiGe

Briggs, P J, Walker, Alison B, Herbert, D C

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 172 KB

english, 1998

4

Theory of interface roughness scattering in quantum wells

Penner, U, Rücker, H, Yassievich, I N

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 126 KB

english, 1998

5

Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors

Lour, W-S, Lia, C-Y

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 304 KB

english, 1998

6

X-ray characterization of an Esaki-Tsu superlattice and transport properties

Grenzer, J, Schomburg, E, Lingott, I, Ignatov, A A, Renk, K F, Pietsch, U, Zeimer, U, Melzer, B Ja, Ivanov, S, Schaposchnikov, S, Kop'ev, P S, Pavel'ev, D G, Koschurinov, Yu

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 142 KB

english, 1998

7

Dielectric image potential of charges in 2D quantum structures

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

8

Optical spectroscopy of titanium-doped CdZnTe

Dammak, M, Alaya, S, Zerrai, A, Brémond, G, Triboulet, R

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 149 KB

english, 1998

9

Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport

González, T, Mateos, J, Pardo, D, Bulashenko, O M, Reggiani, L

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 534 KB

english, 1998

10

MOCVD layer growth of ZnO using DMZn and tertiary butanol

Hahn, B, Heindel, G, Pschorr-Schoberer, E, Gebhardt, W

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 327 KB

english, 1998

11

Intersubband relaxation of two-dimensional electrons in a parallel magnetic field

Filin, A I, Borovitskaya, E S, Larionov, A V

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 135 KB

english, 1998

12

Experimental studies on deep submicron CMOS scaling

Chen, K, Hu, C, Fang, P, Gupta, A, Lin, M R, Wollesen, D L

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 194 KB

english, 1998

13

Searches for skyrmions in the limit of zero -factor

Leadley, D R, Nicholas, R J, Maude, D K, Utjuzh, A N, Portal, J C, Harris, J J, Foxon, C T

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 255 KB

english, 1998

14

Tunable twin guide laser diodes with high output efficiency fabricated by an improved reactive ion etching technique

Schmidt, Berthold, Illek, Stefan, Borchert, Bernd, Rieger, Josef, Amann, Markus-Christian

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 419 KB

english, 1998

15

Magnetotransport study of the intersubband scattering in an Si -doped GaAs

Katsuno, Motonari, Sawaki, Nobuhiko, Suzuki, Takamasa, Hara, Kunihiko

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 170 KB

english, 1998

16

Thermal stability of Cr-Ni-Co alloy Schottky contacts on MBE -GaAs

Türüt, A, Gümüs, A, Saglam, M, Tüzemen, S, Efeoglu, H, Yalçin, N, Missous, M

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 116 KB

english, 1998

17

Effective diffusion length of multicrystalline solar cells

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 163 KB

english, 1998

18

The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates

Li, C R, Tanner, B K, Ashenford, D E, Hogg, J H C, Lunn, B

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 215 KB

english, 1998

19

Calculation of hole mobilities in relaxed and strained SiGe by Monte Carlo simulation

Briggs, P J, Walker, Alison B, Herbert, D C

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 240 KB

english, 1998

20

Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation

Wyllie, C K W, Thompson, D A

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 159 KB

english, 1998

21

Current filamentation in point contact geometry and its 2D stationary model

Novák, V, Hirschinger, J, Prettl, W, Niedernostheide, F-J

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

22

Two experimental methods to characterize load capacitance of a CMOS gate

Chen, Kai, Hu, Chenming, Fang, Peng, Lin, Min Ren, Wollesen, Donald L

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 110 KB

english, 1998

23

Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers

Sellai, A, Dawson, P

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 141 KB

english, 1998

24

Electron nuclear double resonance investigation of iron-acceptor pairs in silicon

Spaeth, J-M, Martini, S, Greulich-Weber, S

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 191 KB

english, 1998

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