Volume 19; Issue 3

Semiconductor Science and Technology

Volume 19; Issue 3

1

Influence of copper precipitation on oxygen precipitation in Czochralski silicon

Xi, Zhenqiang, Yang, Deren, Chen, Jun, Xu, Jin, Ji, Yujie, Que, Duanlin, Moeller, H J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 220 KB

english, 2004

2

InGaN/GaN blue light-emitting diodes with self-assembled quantum dots

Su, Y K, Chang, S J, Ji, L W, Chang, C S, Wu, L W, Lai, W C, Fang, T H, Lam, K T

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 194 KB

english, 2004

3

Characteristics of doped indium in Cd 0.9 Zn 0.1 Te grown by the Bridgman method

Li, Guoqiang, Jie, Wanqi, Wang, Tao, Gu, Zhi

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

4

The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

Zanato, D, Gokden, S, Balkan, N, Ridley, B K, Schaff, W J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 148 KB

english, 2004

5

High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors

Aslan, B, Liu, H C, Bezinger, A, Poole, P J, Buchanan, M, Rehm, R, Schneider, H

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 133 KB

english, 2004

6

Electronic structure of high density carrier states in PbS, PbSe and PbTe

Das, R K, Sahoo, S, Tripathi, G S

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 158 KB

english, 2004

7

Comprehensive study of InGaP/Al x Ga 1 x As/GaAs heterojunction bipolar transistors with different doping concentrations of Al x Ga 1 x As graded layers

Cheng, Shiou-Ying, Chen, Jing-Yuh, Chen, Chun-Yuan, Chuang, Hung-Ming, Yen, Chih-Hung, Lee, Kuan-Ming, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 372 KB

english, 2004

8

Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes

Stewart, A G, Cherkaoui, K, Hall, R S, Crowder, J G

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 81 KB

english, 2004

9

Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe 2 layered crystals

Qasrawi, A F, Gasanly, N M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 135 KB

english, 2004

10

Improved ohmic contact to the n-type 4H-SiC semiconductor using cobalt silicides

Cho, Nam-Ihn, Jung, Kyung-Hwa, Choi, Yong

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 141 KB

english, 2004

11

Carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors

Bhan, R K, Dhar, V

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 272 KB

english, 2004

12

Electrical transport properties of p-GaTe grown by directional freezing method

Efeo lu, H, Karacali, T, Abay, B, Yo urtçu, Y K

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 355 KB

english, 2004

13

Base–collector leakage currents in circular geometry InGaP/GaAs double heterojunction bipolar transistors

Loga, R, Vilches, A

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 451 KB

english, 2004

14

Effective carrier density in porous silicon carbide

Ivanov, P A, Mynbaeva, M G, Saddow, S E

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 3.50 MB

english, 2004

15

Terahertz ultra-fast single-electron transistors fabricated on silicon-on-insulator structures by pattern-dependent oxidation

Park, K S, Kim, S J, Paik, I B, Lee, W H, Kang, J S, Cho, Y B, Lee, S D, Lee, C K, Kim, J H, Choi, J B

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 341 KB

english, 2004

16

Patterned buried oxide layers under a single MOSFET to improve the device performance

Dong, Yemin, Chen, Meng, Chen, Jing, Wang, Xiang, Wang, Xi, He, Ping, Lin, Xi, Tian, Lilin, Li, Zhijian

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 134 KB

english, 2004

17

Design guideline of an ultra-thin body SOI MOSFET for low-power and high-performance applications

An, Xia, Huang, Ru, Zhao, Baoying, Zhang, Xing, Wang, Yangyuan

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 130 KB

english, 2004

18

Characterization of ZnTe films electrodeposited from aqueous solution containing NaOH

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 183 KB

english, 2004

19

Effect of nitrogen on denuded zone in Czochralski silicon wafer

Cui, Can, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Li, Liben, Que, Duanlin

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 603 KB

english, 2004

20

Terahertz generation and chaotic dynamics in GaN NDR diode

Lü, J T, Cao, J C

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 1.03 MB

english, 2004

21

The influence of deposition conditions on the dielectric properties of diamond films

Wang, Linjun, Xia, Yiben, Zhang, Minglong, Fang, Zhijun, Shi, Weimin

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 105 KB

english, 2004

22

Colour coding Ge concentrations in Si 1 x Ge x by bevelling and oxidation: CABOOM

Fobelets, K, Tan, T L, Thielemans, K, Ahmad, M M, Ferguson, R S, Zhang, J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 260 KB

english, 2004

23

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Korbutyak, D V, Klad'ko, V P, Krylyuk, S G, Litovchenko, V G, Shalimov, A V, Kuchuk, A V

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 551 KB

english, 2004

24

Texturization of cast multicrystalline silicon for solar cells

Xi, Zhenqiang, Yang, Deren, Dan, Wu, Jun, Chen, Li, Xianhang, Que, Duanlin

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 227 KB

english, 2004

25

Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate

Tan, S W, Hsu, M K, Lin, A H, Chu, M Y, Chen, W T, Lour, W S

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 263 KB

english, 2004

26

Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

Harmer, P, Halsall, M P, Wolverson, D, Parbrook, P J, Henley, S J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 105 KB

english, 2004

27

Small molecular white organic light emitting devices with a single emission layer

Duan, Yu, Zhao, Yi, Cheng, Gang, Jiang, Wenlong, Li, Jiang, Wu, Zhijun, Hou, Jingying, Liu, Shiyong

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 112 KB

english, 2004

28

Electronic flow across swift ( 100 MeV) heavy ion irradiated Fe/Si interfaces

Srivastava, P C, Pandey, P S, Tripathi, J K

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 234 KB

english, 2004

29

Negatively charged excitons as an optical probe of spin injection from Cd 0.73 Mg 0.24 Mn 0.03 Te spin aligner into a graded bandgap Cd 1 x Mg x Te/CdTe quantum well structure

Ghali, M, Kossut, J, Janik, E, Heiss, W

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 259 KB

english, 2004

30

Luminescence from indented Te-doped GaSb crystals

Chioncel, M F, Díaz-Guerra, C, Piqueras, J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 321 KB

english, 2004

31

Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

Soshnikov, I P, Kovsh, A R, Ustinov, V M, Kryzhanovskaya, N V, Ledentsov, N N, Bimberg, D, Kirmse, H, Neumann, W, Gorbenko, O M, Lin, G, Wang, J, Shiao, R S, Chi, J

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 194 KB

english, 2004

32

P -type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Novikov, S V, Edmonds, K W, Giddings, A D, Wang, K Y, Staddon, C R, Campion, R P, Gallagher, B L, Foxon, C T

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 100 KB

english, 2004

33

Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

Kim, Il-Soo, Jeong, Sang-Hun, Kim, Sang Sub, Lee, Byung-Teak

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 177 KB

english, 2004

34

Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data

Nakwaski, W, Wasiak, M, Ma kowiak, P, Bedyk, W, Osi ski, M, Passaseo, A, Tasco, V, Todaro, M T, Vittorio, M De, Joray, R, Chen, J X, Stanley, R P, Fiore, A

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 363 KB

english, 2004

35

Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFET

Kaushik, Navneet, Haldar, Subhasis, Gupta, Mridula, Gupta, R S

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

36

Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

Aslan, B, Turan, R, Liu, H C, Baribeau, J-M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 165 KB

english, 2004

37

Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas

Shang, X Z, Wang, W C, Wu, S D, Xing, Z G, Guo, L W, Wang, W X, Huang, Q, Zhou, J M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 92 KB

english, 2004

38

Studies on the fabrication of Ag/Hg 1 Ba 2 Ca 1 Cu 2 O 6+ /CdSe heterostructures using the pulse electrodeposition technique

Shivagan, D D, Shirage, P M, Pawar, S H

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 355 KB

english, 2004

39

Design of a multiple ring Aharonov–Bohm gradiometer

Banfi, Francesco

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

40

Modification of the electrodes of organic light-emitting devices using the SnO 2 ultrathin layer

Xie, Wenfa, Zhang, Letian, Liu, Shiyong

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 98 KB

english, 2004

41

Electric-field-dependent subband population in undoped GaAs/(Al,Ga)As quantum-cascade structures

Schrottke, L, Ohtsuka, T, Hey, R, Kostial, H, Grahn, H T

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

42

Analytical models for polarization-induced carriers

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 178 KB

english, 2004

43

Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots

Hastas, N A, Tassis, D H, Dimitriadis, C A, Dozsa, L, Franchi, S, Frigeri, P

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

44

The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes

Monakhov, A, Krier, A, Sherstnev, V V

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 472 KB

english, 2004

45

A physics-based VLSI interconnect model including substrate and conductor skin effects

Ymeri, H, Nauwelaers, B, Maex, Karen, Roest, D De

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 134 KB

english, 2004

46

Improved performance of 2-imidazolin-5-one as sensitizer at nanocrystalline ZnO thin film electrode in acetonitrile solution

Bahadur, Lal, Srivastava, Pankaj

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 114 KB

english, 2004

47

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Cojocari, O, Mottet, B, Rodriguez-Girones, M, Biber, S, Marchand, L, Schmidt, L-P, Hartnagel, H L

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 738 KB

english, 2004

48

Electron quasi-Fermi level splitting at the base–emitter junction of HBTs and DHBTs

García-Loureiro, Antonio J, López-González, Juan M

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 182 KB

english, 2004

49

All-optical digitizing of laser transmission through thin-film GaAs on glass

Erlacher, A, Ullrich, B

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 91 KB

english, 2004

50

Fabrication and characterization of circular geometry InGaP/GaAs double heterojunction bipolar transistors

Loga, R, Vilches, A

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 89 KB

english, 2004

51

THz photocurrent through an independently contacted three-level heterostructure

Vasko, F T, O'Reilly, E P

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 124 KB

english, 2004

52

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Hartmann, J M, Bogumilowicz, Y, Holliger, P, Laugier, F, Truche, R, Rolland, G, Séméria, M N, Renard, V, Olshanetsky, E B, Estibals, O, Kvon, Z D, Portal, J C, Vincent, L, Cristiano, F, Claverie, A

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 676 KB

english, 2004