Volume 20; Issue 2

Semiconductor Science and Technology

Volume 20; Issue 2

1

Conventional n-type doping in diamond: state of the art and recent progress

Nesladek, Milos

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 1.07 MB

english, 2005

2

Channel thermal noise of SOI MOSFET in high-frequency region

Kapoor, Nirupama, Haldar, Subhasis, Gupta, Mridula, Gupta, R S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 115 KB

english, 2005

3

Numerical simulation of current–voltage characteristics of AlGaN/GaN HEMTs at high temperatures

Chang, Yuancheng, Tong, K Y, Surya, C

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

4

On the properties of indium doped ZnO thin films

Kumar, P M Ratheesh, Kartha, C Sudha, Vijayakumar, K P, Abe, T, Kashiwaba, Y, Singh, F, Avasthi, D K

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 628 KB

english, 2005

5

Dielectric properties of rf sputtered Ta 2 O 5 on rapid thermally nitrided Si

Novkovski, N, Paskaleva, A, Atanassova, E

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 161 KB

english, 2005

6

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Bogumilowicz, Y, Hartmann, J M, Truche, R, Campidelli, Y, Rolland, G, Billon, T

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 1020 KB

english, 2005

7

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation

Kähler, D, Knop, M, Kunze, U, Reuter, D, Wieck, A D

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 313 KB

english, 2005

8

Lateral n–i–p junctions formed in an InSb quantum well by bevel etching

Nash, G R, Nash, K J, Smith, S J, Bartlett, C J, Jefferson, J H, Buckle, L, Emeny, M T, Buckle, P D, Ashley, T

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 243 KB

english, 2005

9

Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different Al x Ga 1− x As matrices

Fürst, J, Pascher, H, Abalmassov, V A, Shamirzaev, T S, Zhuravlev, K S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 179 KB

english, 2005

10

Structure and energy gap of Cd 1− x Ca x Te and Cd 1− y Ca y Se as a function of Ca 2+ incorporation

Miotkowski, I, Alawadhi, H, Seong, M J, Tsoi, S, Ramdas, A K, Miotkowska, S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 187 KB

english, 2005

11

Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch

Tsai, Jung-Hui, Chu, Ying-Cheng, Chiu, Shao-Yen, Zhu, King-Poul, Chu, Yu-Jui, Chen, Jeng-Shyan

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

12

An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs

Djeffal, F, Guessasma, S, Benhaya, A, Chahdi, M

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 179 KB

english, 2005

13

Electronic and structural properties of grain boundaries in electron-irradiated edge-defined film-fed growth silicon

Vernon-Parry, K D, Davies, G, Galloway, S

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 396 KB

english, 2005

14

An experimental investigation of Zn diffusion into InP and InGaAs

He, Suxiang, Zhao, Yanli

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 81 KB

english, 2005

15

Diffusion length measurement with a quick EBIC technique

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 110 KB

english, 2005

16

Design optimization of 600 V SiC SITs for high power and high frequency operation

Choi, Young Chul, Cha, Ho-Young, Eastman, Lester F, Spencer, Michael G

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

17

Electronic field-assisted emission from GaN: the role of surface charges

Mayer, A, Miskovsky, N M, Cutler, P H

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 150 KB

english, 2005

18

Numerical study on the optimization of hole injection layers in organic light-emitting devices

Peng, Ying-Quan, Yang, Jian-Hong, Sun, Shuo

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 206 KB

english, 2005

19

Formation of a denuded zone in nitrogen-doped Czochralski silicon wafer treated by ramping anneals

Gong, Longfei, Ma, Xiangyang, Tian, Daxi, Fu, Liming, Yang, Deren

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 468 KB

english, 2005

20

Cathodoluminescence study of defects in deformed (110) and (100) surfaces of TiO 2 single crystals

Fernández, I, Cremades, A, Piqueras, J

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 378 KB

english, 2005

21

Deep level transient spectroscopy studies on BaTiO 3 and Ba 1– x Ca x TiO 3 thin films deposited on Si substrates

Victor, P, Krupanidhi, S B

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 498 KB

english, 2005

22

1.55 µm spot-size converter with monolithically integrated laser diode by conventional process

Hou, Lianping, Wang, Wei, Zhu, Hongliang

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 87 KB

english, 2005

23

Deep level transient spectroscopy of Al x Ga 1− x As/GaAs single-quantum-well lasers

Fekete, K Zdansky, V Gorodynskyy, J Kos

Journal:

Semiconductor Science and Technology

Year:

2005

File:

PDF, 111 KB

2005

24

Scaling capability improvement of silicon-on-void (SOV) MOSFET

Tian, Yu, Bu, Weihai, Wu, Dake, An, Xia, Huang, Ru, Wang, Yangyuan

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

25

Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP

Aninkevičius, V, Matulionis, A, Matulioniene, I

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 160 KB

english, 2005

26

GaAs/AlGaAs quantum well intermixing using high-density argon plasma

Djie, H S, Mei, T, Arokiaraj, J

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 183 KB

english, 2005