Volume 22; Issue 5

Semiconductor Science and Technology

Volume 22; Issue 5

1

Characteristics of HfO 2 and SiO 2 on p-type silicon wafers using terahertz spectroscopy

Altan, H, Sengupta, A, Pham, D, Grebel, H, Federici, J F

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 158 KB

english, 2007

2

Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopy

Elhadidy, H, Franc, J, Moravec, P, Höschl, P, Fiederle, M

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 481 KB

english, 2007

3

Enhanced device performance of AlGaN/GaN HEMTs using HfO 2 high- k dielectric for surface passivation and gate oxide

Liu, Chang, Chor, Eng Fong, Tan, Leng Seow

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 462 KB

english, 2007

4

Long wavelength quantum-dot lasers selectively populated using tunnel injection

George, A A, Smowton, P M, Mi, Z, Bhattacharya, P

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 193 KB

english, 2007

5

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al 0.25 Ga 0.75 N/GaN heterostructures

Lisesivdin, S B, Acar, S, Kasap, M, Ozcelik, S, Gokden, S, Ozbay, E

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 398 KB

english, 2007

6

Collective coherence in planar semiconductor microcavities

Keeling, J, Marchetti, F M, Szymańska, M H, Littlewood, P B

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 1.34 MB

english, 2007

7

Structure evaluation of submicrometre silicon chips removed by diamond turning

Jasinevicius, R G, Duduch, J G, Pizani, P S

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 1.16 MB

english, 2007

8

Comparative analysis of nanoscale MOS device architectures for RF applications

Kranti, Abhinav, Armstrong, G Alastair

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 382 KB

english, 2007

9

Investigations on the 100 MeV Au 7+ ion irradiation of GaN

Kumar, V Suresh, Kumar, M Senthil, Puviarasu, P, Kumar, J, Mohanty, T, Kanjilal, D, Asokan, K, Tripathi, A, Fontana, M, Camarani, A

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 753 KB

english, 2007

10

Spin and orbital motion surfaces in HgTe

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 146 KB

english, 2007

11

Optical properties of quantum dots produced from inverted-gap semiconductors

Isaev, Leonid S, Satanin, Arkady M, Joe, Yong S

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 151 KB

english, 2007

12

Highly efficient phosphorescent organic light-emitting devices based on Re(CO) 3 Cl-bathophenanthroline

Li, Jiang, Si, Zhenjun, Liu, Chunbo, Li, Chuannan, Zhao, Feifei, Duan, Yu, Chen, Ping, Liu, Shiyong, Li, Bin

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 143 KB

english, 2007

13

Recessed source/drain for sub-50 nm UTB SOI MOSFET

Ke, Wei, Han, Xu, Li, Dingyu, Wang, Xinan, Zhang, Tianyi, Han, Ruqi, Zhang, Shengdong

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 538 KB

english, 2007

14

Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S -parameter measurements

Penarier, A, Jarrix, S G, Perotin, M, Pascal, F, Delseny, C

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 199 KB

english, 2007

15

Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes

Bulashevich, K A, Mymrin, V F, Karpov, S Yu, Demidov, D M, Ter-Martirosyan, A L

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 922 KB

english, 2007

16

High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

Choi, Y C, Pophristic, M, Peres, B, Cha, H-Y, Spencer, M G, Eastman, L F

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 587 KB

english, 2007

17

Optimization of super-junction SOI-LDMOS with a step doping surface-implanted layer

Chen, Wanjun, Zhang, Bo, Li, Zhaoji

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 388 KB

english, 2007

18

On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Lai, Po-Hsien, Fu, Ssu-I, Hung, Ching-Wen, Tsai, Yan-Ying, Chen, Tzu-Pin, Chen, Chun-Wei, Huang, Yi-Wen, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 476 KB

english, 2007

19

Analysis of the local indium composition in ultrathin InGaN layers

Usov, S O, Tsatsulnikov, A F, Lundin, V V, Sakharov, A V, Zavarin, E E, Sizov, D S, Musikhin, Yu G, Bert, N A, Arakcheeva, E M, Ledentsov, N N

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 301 KB

english, 2007

20

Frequency dependence of the effective series capacitance of metal–Ta 2 O 5 /SiO 2 –Si structures

Novkovski, N, Atanassova, E

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 188 KB

english, 2007