Volume 23; Issue 12

Semiconductor Science and Technology

Volume 23; Issue 12

1

Strong exciton–photon coupling in semiconductor quantum dot systems

Reithmaier, Johann Peter

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 3.37 MB

english, 2008

2

Reactive ion etching of GaN in SF 6 + Ar and SF 6 + N 2 plasma

Sreenidhi, T, Baskar, K, DasGupta, Amitava, DasGupta, Nandita

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 355 KB

english, 2008

3

Minority carrier recombination in spherical silicon crystals: measurement and process-induced effects

Gharghi, M, Cheng, C, Sivoththaman, S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 563 KB

english, 2008

4

Effects of design parameters on the performance of terahertz quantum-cascade lasers

Li, H, Cao, J C, Liu, H C

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 153 KB

english, 2008

5

Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer

Zhang, Yong-Gang, Gu, Yi, Wang, Kai, Li, Ai-zhen, Li, Cheng

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.11 MB

english, 2008

6

Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes

Bogdanov, M V, Bulashevich, K A, Evstratov, I Yu, Zhmakin, A I, Karpov, S Yu

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 941 KB

english, 2008

7

Centers with low correlation energy in deep-level transient spectroscopy studies

Yarykin, Nikolai

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 184 KB

english, 2008

8

GaN thermal decomposition in N 2 AP-MOCVD environment

Bchetnia, A, Kemis, I, Touré, A, Fathallah, W, Boufaden, T, Jani, B El

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 660 KB

english, 2008

9

Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

Imhof, S, Bückers, C, Thränhardt, A, Hader, J, Moloney, J V, Koch, S W

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 219 KB

english, 2008

10

Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

Chen, Li-Yang, Cheng, Shiou-Ying, Lour, Wen-Shiung, Tsai, Jung-Hui, Guo, Der-Feng, Tsai, Tsung-Han, Chen, Tzu-Pin, Liu, Yi-Chun, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 232 KB

english, 2008

11

Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method

Ghosh, Biswajit, Das, Madhumita, Banerjee, Pushan, Das, Subrata

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.49 MB

english, 2008

12

The Hall effect in Ni-doped p-CdSb in a strong magnetic field

Laiho, R, Lashkul, A V, Lisunov, K G, Lähderanta, E, Shakhov, M A, Zakhvalinskii, V S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 815 KB

english, 2008

13

Comparison of electrodeposited and sputtered intrinsic and aluminium-doped zinc oxide thin films

Wellings, J S, Samantilleke, A P, Warren, P, Heavens, S N, Dharmadasa, I M

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 527 KB

english, 2008

14

Effect of a buffer layer on the properties of UV photodetectors based on a ZnO/diamond film structure

Huang, Jian, Wang, Linjun, Xu, Run, Shi, Weimin, Xia, Yiben

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 480 KB

english, 2008

15

An analytical model for current crowding and source contact resistance in top-contact organic thin-film transistors

Islam, M Nurul, Mazhari, B

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

16

Schottky versus bipolar 3.3 kV SiC diodes

Pérez-Tomás, A, Brosselard, P, Hassan, J, Jordà, X, Godignon, P, Placidi, M, Constant, A, Millán, J, Bergman, J P

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 800 KB

english, 2008

17

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Gagis, G S, Vasil'ev, V I, Deryagin, A G, Dudelev, V V, Maslov, A S, Levin, R V, Pushnyi, B V, Smirnov, V M, Sokolovskii, G S, Zegrya, G G, Kuchinskii, V I

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 687 KB

english, 2008

18

Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET

Wang, Ningjuan, Li, Ning, Liu, Zhongli, Yu, Fang

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 238 KB

english, 2008

19

The substrate-induced effect of GaN MSM photodetectors on silicon substrate

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 646 KB

english, 2008

20

Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu

Sun, Yongjian, Yu, Tongjun, Chen, Zhizhong, Kang, Xiangning, Qi, Shengli, Li, Minggang, Lian, Guijun, Huang, Sen, Xie, Rongsi, Zhang, Guoyi

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 393 KB

english, 2008

21

Investigation of InGaN/GaN power chip light emitting diodes with TiO 2 /SiO 2 omnidirectional reflector

Huang, H W, Lin, C H, Yu, C C, Lee, B D, Kuo, H C, Leung, K M, Wang, S C

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 983 KB

english, 2008

22

Theoretical study of structural parameters and energy gap composition dependence of Ga 1− x B x N alloys

Kanoun, M B, Goumri-Said, S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 523 KB

english, 2008

23

Comparison of optical and structural quality of GaIn(N)As analog and digital quantum wells grown by molecular beam epitaxy

Zhao, H, Wang, S M, Zhao, Q X, Lai, Z H, Sadeghi, M, Larsson, A

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 862 KB

english, 2008

24

The impact of gate–image charge on RTS amplitudes in ultra-thin gate oxide n-MOSFETs

Zhang, Peng, Zhuang, Yi Qi, Ma, Zhong Fa, Bao, Li, Du, Lei, Bao, Jun Lin

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 212 KB

english, 2008

25

Effect of swift heavy ion Ag 9+ irradiation on the surface morphology, structure and optical properties of AgGaS 2 single crystals

Prabukanthan, P, Asokan, K, Kanjilal, D, Dhanasekaran, R

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.02 MB

english, 2008

26

Electronic states in quantum rings based on narrow-gap III–V semiconductors

González-Santander, C, Domínguez-Adame, F

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 288 KB

english, 2008

27

Collapse of ferromagnetism in (Ga, Mn)As at high hole concentrations

Cho, Y J, Liu, X, Furdyna, J K

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 291 KB

english, 2008

28

Comparative influence study of gate-formation structuring on Al 0.22 Ga 0.78 As/In 0.16 Ga 0.84 As/Al 0.22 Ga 0.78 As double heterojunction high electron mobility transistors

Hsu, M K, Chiu, S Y, Wu, C H, Guo, D F, Lour, W S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1020 KB

english, 2008

29

GaAs-based III–N y –V 1− y active regions based on short-period super-lattice structures

Jalili, Yousef Seyed, Stavrinou, Paul N, Parry, Gareth

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 319 KB

english, 2008

30

Electrical and structural evaluations of high- k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO 2 /Si structure

Nakashima, H, Wang, D, Sugimoto, Y, Suehiro, Y, Yamamoto, K, Kajiwara, M, Hirayama, K

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 215 KB

english, 2008

31

Very low recombination phosphorus emitters for high efficiency crystalline silicon solar cells

Ortega, P, Vetter, M, Bermejo, S, Alcubilla, R

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 282 KB

english, 2008

32

Device considerations and design optimizations for dopant segregated Schottky barrier MOSFETs

Shih, Chun-Hsing, Yeh, Sheng-Pin

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 420 KB

english, 2008

33

High performance power VDMOSFETs with a split-gate floating np-well design

Liao, Chien-Nan, Chien, Feng-Tso, Chen, Chii-Wen, Cheng, Ching-Hwa, Tsai, Yao-Tsung

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 776 KB

english, 2008

34

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

Galeti, M, Martino, J A, Simoen, E, Claeys, C

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 754 KB

english, 2008

35

Pressure and temperature tuning of an external cavity InGaAsP laser diode

Dybała, F, Bercha, A, Piechal, B, Trzeciakowski, W, Bohdan, R, Mrozowicz, M, Klehr, A, Ressel, P, Wenzel, H, Sumpf, B, Erbert, G

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 475 KB

english, 2008

36

Creation of GaAs microstructures using the nuclear nanoprobe LIPSION

Menzel, F, Spemann, D, Lenzner, J, Böhlmann, W, Zimmermann, G, Butz, T

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.13 MB

english, 2008

37

The impact of wafer nanotopography on threshold voltage variation in NAND flash memory cells fabricated with poly-silicon chemical mechanical polishing

Park, Jea-Gun, Park, Jin-Hyung, Kim, Seong-Je, Kanemoto, Manabu, Lee, Gon-Sub

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 908 KB

english, 2008

38

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Leem, Shi Jong, Shin, Young Chul, Kim, Eun Hong, Kim, Chul Min, Lee, Byoung Gyu, Moon, Youngboo, Lee, In Hwan, Kim, Tae Geun

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 518 KB

english, 2008

39

Author index with titles (Volume 23)

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 463 KB

english, 2008

40

Deep-level transient spectroscopy study on direct silicon bonded (1 1 0)/(1 0 0) interfacial grain boundary

Yu, Xuegong, Lu, Jinggang, Rozgonyi, George

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 481 KB

english, 2008