Volume 34; Issue 3

Semiconductor Science and Technology

Volume 34; Issue 3

1

InSb nanowires for multispectral infrared detection

Goosney, Curtis J, Jarvis, Victoria M, Wilson, Debra P, Goktas, Nebile I, LaPierre, Ray R

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.31 MB

2019

2

Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs

Mateos-Angulo, S, Rodríguez, R, del Pino, J, González, B, Khemchandani, S L

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.51 MB

2019

3

Recent advances in manufacturing of miniaturized uncooled IR detection modules

Kalinowski, Przemysław, Mikołajczyk, Janusz, Piotrowski, Adam, Piotrowski, Józef

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 7.55 MB

2019

4

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Liu, Lu, Lu, Hanhan, Xu, Jingping, Lai, Pui-To, Tang, Wing-Man

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.25 MB

2019

5

Modified approach to modeling barrier inhomogeneity in Schottky diodes

Reddy, Pramod, Kumar, Jitendra

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.44 MB

2019

6

Cu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing

Erkan, Serkan, Başol, Bülent M, Atasoy, Y, Çiriş, Ali, Yüksel, Ömer F, Bacaksız, Emin

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.14 MB

2019

7

Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET

Uddin, Wasi, Saleem Pasha, Mohd, Dhyani, Veerendra, Maity, Sarmistha, Das, Samaresh

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.71 MB

2019

8

Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

Afalla, Jessica, Gonzales, Karl Cedric, Prieto, Elizabeth Ann, Catindig, Gerald, Vasquez, John Daniel, Husay, Horace Andrew, Tumanguil-Quitoras, Mae Agatha, Muldera, Joselito, Kitahara, Hideaki, Somin

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.26 MB

2019

9

InSb nanowires for multispectral infrared detection

Goosney, Curtis J, Jarvis, Victoria M, Wilson, Debra P, Goktas, Nebile I, LaPierre, Ray R

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.31 MB

english, 2019

10

Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs

Mateos-Angulo, S, Rodríguez, R, del Pino, J, González, B, Khemchandani, S L

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.51 MB

english, 2019

11

Special Issue on hybrid quantum materials and devices

Roddaro, Stefano, Fischer, Saskia F, Ishibashi, Koji

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 442 KB

english, 2019

12

Transition to the quantum hall regime in InAs nanowire cross-junctions

Gooth, Johannes, Borg, Mattias, Schmid, Heinz, Bologna, Nicolas, Rossell, Marta D, Wirths, Stephan, Moselund, Kirsten, Nielsch, Kornelius, Riel, Heike

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.22 MB

english, 2019

13

Transition to the quantum hall regime in InAs nanowire cross-junctions

Gooth, Johannes, Borg, Mattias, Schmid, Heinz, Bologna, Nicolas, Rossell, Marta D, Wirths, Stephan, Moselund, Kirsten, Nielsch, Kornelius, Riel, Heike

Journal:

Semiconductor Science and Technology

Year:

2019

File:

PDF, 1.22 MB

2019