Volume 7; Issue 4

Semiconductor Science and Technology

Volume 7; Issue 4

1

Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures

Gilperez, J M, Gonzalez-Sanz, F, Calleja, E, Munoz, E, Calleja, J M, Mestres, N, Castagne, J, Barbier, E

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 336 KB

english, 1992

2

Oxygen precipitation in antimony-doped silicon

Gupta, S, Messoloras, S, Schneider, J R, Stewart, R J, Zulehner, W

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 901 KB

english, 1992

3

Photoluminescence of Ga As -related 1.32 eV emission in bulk GaAs

Yu, P W, Fischer, D W, Sizelove, J R

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 383 KB

english, 1992

4

Investigations of MOCVD-grown AlInAs-InP type II heterostructures

Lugagne-Delpon, E, Voisin, P, Vieren, J P, Voos, M, Andre, J P, Patillon, J N

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 337 KB

english, 1992

5

Hole-acoustic phonon interaction in quantum wells

Greipel, K, Rossler, U

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 370 KB

english, 1992

6

Determination of the Np and pP heterojunction quality in Al x Ga 1-x As LPE-grown double heterostructures from the capacitance measurements

Puzin, I B, Phyliptchenko, V Ya, Sheinkman, M K, Shervarly, G K

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 454 KB

english, 1992

7

Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition

Katz, A, Feingold, A, Pearton, S J, Chakrabarti, U K, Lee, K M

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 944 KB

english, 1992

8

Overhauser shift and nuclear spin relaxation in Al x Ga 1-x As/GaAs heterostructures

Kamp, G, Obloh, H, Schneider, J, Weimann, G, Ploog, K

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 300 KB

english, 1992

9

Superlattice dispersion in InGaAs/InGaAsP multi-quantum wells

Wong, S L, Nicholas, R J, Cureton, C G, Jowett, J M, Thrush, E J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 316 KB

english, 1992

10

Cyclotron resonance of the quasi-two-dimensional electron gas at Hg 1-x Cd x Te grain boundaries

Ludwig, F, Nachtwei, G, Watts, M, Bassom, N J, Muller, H -U, Kraak, W, Gille, P, Nicholas, R J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 329 KB

english, 1992

11

n-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

Simpson, J, Wallace, J M, Wang, S Y, Stewart, H, Hunter, J J, Adams, S J A, Prior, K A, Cavenett, B C

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 195 KB

english, 1992

12

Hole traps in indium-doped and indium-free GaAs grown by molecular beam epitaxy

Brehme, S, Krispin, P, Lubyshev, D I

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 336 KB

english, 1992

13

Study of Zn-associated levels in GaN

Khan, M Rezaul Huque, Sawaki, N, Akasaki, I

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 343 KB

english, 1992

14

Nonlinear absorption and refraction in strained InGaAs/InP multiple quantum wells for all-optical switching

Bradley, P J, Calvani, R, Campi, D, Caponi, R, Genova, F

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 406 KB

english, 1992

15

Optical and photoelectrical properties of Hg 0.6 Cd 0.4 Te

Herrmann, K H, Hoerstel, W, Mollmann, K -P, Sassenberg, U, Tomm, J W

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 325 KB

english, 1992

16

AlGaAs/GaAs HBTs grown on InP by organometallic vapour phase epitaxy

Hobson, W S, Ren, F, Pearton, S J, Fullowan, T R, Laskowski, E J, Chen, Y K

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 234 KB

english, 1992

17

Metal-Ga 0.47 In 0.53 As contacts with GaAs assist layers

Malacky, L, Zwinge, G, Schlachetzki, A

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 299 KB

english, 1992

18

Calcium contamination of silicon epitaxy

Glasper, J L, Robbins, D J, Pidduck, A J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 627 KB

english, 1992

19

Electron interactions with coupled phonon-plasmons in GaAs/GaAlAs superlattices

Chamberlain, M P

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 561 KB

english, 1992

20

The temperature dependence of in-plane transient photoconductivity in GaInAs/InP MQWs

Bishop, P J, Ridley, B K, Bass, S J, Taylor, L L

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 515 KB

english, 1992

21

Magnetotransport investigations of the quasi-two-dimensional electron system in Hg 1-x Cd x Te bicrystals in tilted magnetic fields

Nachtwei, G, Bassom, N J, Kraak, W, Nicholas, R J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 423 KB

english, 1992

22

On the spatial resolution of small-signal DLTS: the need for a quantum model

Thurzo, I, Pincik, E

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 455 KB

english, 1992

23

Raman scattering in InAs 1-x Sb x alloys grown on GaAs by molecular beam epitaxy

Li, Y B, Dosanjh, S S, Ferguson, I T, Norman, A G, Oliveira, A G de, Stradling, R A, Zallen, R

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 214 KB

english, 1992

24

Magneto-optical study of CdTe/Cd 1-x Mn x Te multiple quantum wells with low potential barriers

Wasiela, A, Peyla, P, d'Aubigne, Y Merle, Nicholls, J E, Ashenford, D E, Lunn, B

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 515 KB

english, 1992

25

InGaP/GaAs single- and double-heterojunction bipolar transistors grown by organometallic vapour phase epitaxy

Hobson, W S, Ren, F, Lothian, J, Pearton, S J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 150 KB

english, 1992

26

A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET

Ouali, F F, Challis, L J, Cooper, J

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 308 KB

english, 1992

27

Observation of persistent photoconductivity in delta -doped GaAs

Arscott, S, Missous, M, Dobaczewski, L

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 270 KB

english, 1992