Volume 9; Issue 3

Semiconductor Science and Technology

Volume 9; Issue 3

1

Cyclotron emission study of electron masses in GaAs-GaAlAs heterostructures

Zawadzki, W, Chaubet, C, Dur, D, Knap, W, Raymond, A

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 680 KB

english, 1994

2

Hole states in GaAs/AlAs double-barrier structures and multiple quantum wells

Edwards, G, Inkson, J C

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 740 KB

english, 1994

3

Long-wavelength optical phonons of Cd x Zn 1-x Sb mixed crystals

Smirnov, D V, Mashovets, D V, Pasquier, S, Leotin, J, Puech, P, Landa, G, Roznovan, Yu V

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 313 KB

english, 1994

4

Electronic structure of Si delta -doped GaAs in an electric field

Dominguez-Adame, F, Mendez, B, Macia, E

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 647 KB

english, 1994

5

The ground-state energy of an exciton in a parabolic quantum dot

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 207 KB

english, 1994

6

Extension of the spectral response of sprayed ZnO thin film electrodes induced by nickel and cobalt doping

Bahadur, L, Rao, T N, Pandey, J P

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 624 KB

english, 1994

7

Tunnelling in Pb-p-HgCdTe Schottky barriers in longitudinal and transverse magnetic fields

Zav'ialov, V V, Radantsev, V F

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 654 KB

english, 1994

8

Effect of the diffusion impurity profile on the microwave properties of silicon p + nn + IMPATT diodes

Panda, A K, Dash, G N, Pati, S P

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 495 KB

english, 1994

9

Angle lapping of multilayer structures for thickness measurements using focused ion beam micromachining

Khamsehpour, B, Davies, S T

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 564 KB

english, 1994

10

Confinement effects on the phonon spectrum of thin InAs/InP strained single quantum wells

Pavesi, L, Mariotto, G, Carlin, J F, Rudra, A, Colombo, L

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 535 KB

english, 1994

11

Fabrication of GaN nanostructures by a sidewall-etchback process

Pearton, S J, Ren, F, Abernathy, C R, Lothian, J R

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 330 KB

english, 1994