Volume 31; Issue 12

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Semiconductors
Volume 31; Issue 12

Semiconductors

Volume 31; Issue 12

1

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, A. V. Markov

Journal:

Year:

1997

Language:

english

File:

PDF, 86 KB

english, 1997

2

Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

T. Ya. Gorbach, S. V. Svechnikov, P. S. Smertenko, P. G. Tul’chinskii, A. V. Bondarenko, S. A. Volchek, A. M. Dorofeev, G. Masini, G. Maiello, S. La Monica, A. Ferrari

Journal:

Year:

1997

Language:

english

File:

PDF, 83 KB

english, 1997

3

Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data

Journal:

Year:

1997

Language:

english

File:

PDF, 78 KB

english, 1997

4

Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum

A. M. Agal’tsov, V. S. Gorelik, I. A. Rakhmatullaev

Journal:

Year:

1997

Language:

english

File:

PDF, 54 KB

english, 1997

5

Photoconductivity of sulfur-doped silicon near 10.6 µm

Kh. B. Siyabekov, V. T. Tulanov

Journal:

Year:

1997

Language:

english

File:

PDF, 62 KB

english, 1997

6

Effect of different types of surface treatment on the photoelectric and optical properties of CdTe

A. Baidullaeva, A. I. Vlasenko, P. E. Mozol’

Journal:

Year:

1997

Language:

english

File:

PDF, 60 KB

english, 1997

7

Properties ofp-PbTe (Ga) based diode structures

B. A. Akimov, E. V. Bogdanov, V. A. Bogoyavlenskii, L. I. Ryabova, V. I. Shtanov

Journal:

Year:

1997

Language:

english

File:

PDF, 79 KB

english, 1997

8

Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma

K. S. Zhuravlev, V. A. Kolosanov, I. I. Marahovka, M. Holland

Journal:

Year:

1997

Language:

english

File:

PDF, 68 KB

english, 1997

9

Photoluminescence of localized exitons in coherently strained ZnS-ZnSe/GaAs(001) quantum wells

V. V. Tishchenko, N. V. Bondar, M. S. Brodyn, A. V. Kovalenko

Journal:

Year:

1997

Language:

english

File:

PDF, 56 KB

english, 1997

10

Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures

Journal:

Year:

1997

Language:

english

File:

PDF, 108 KB

english, 1997

11

Metastability and relaxation processes in hydrogenated amorphous silicon

B. G. Budaguan, A. A. Aivazov, M. N. Meitin, A. Yu. Sazonov, A. E. Berdnikov, A. A. Popov

Journal:

Year:

1997

Language:

english

File:

PDF, 101 KB

english, 1997

12

Light-induced processes ina-Si:H films at elevated temperatures

I. A. Kurova, É. V. Larina, N. N. Ormont, D. V. Senashenko

Journal:

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

13

Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states

B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, V. V. Ryl’kov, V. E. Sizov

Journal:

Year:

1997

Language:

english

File:

PDF, 119 KB

english, 1997

14

Kinetics of ion depolarization of Si-MOS structures in the linear voltage sweep regime

A. G. Zhdan, E. I. Goldman, G. V. Chucheva

Journal:

Year:

1997

Language:

english

File:

PDF, 130 KB

english, 1997

15

Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations

L. E. Vorob’ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, V. N. Tulupenko

Journal:

Year:

1997

Language:

english

File:

PDF, 158 KB

english, 1997

16

Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields

L. E. Vorob’ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, V. N. Tulupenko

Journal:

Year:

1997

Language:

english

File:

PDF, 126 KB

english, 1997