Volume 32; Issue 12

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Semiconductors
Volume 32; Issue 12

Semiconductors

Volume 32; Issue 12

1

Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1−xSnxSe alloys

E. P. Skipetrov, B. B. Kovalev, L. A. Skipetrova, E. A. Zvereva

Journal:

Year:

1998

Language:

english

File:

PDF, 103 KB

english, 1998

2

Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

V. V. Artamanov, M. Ya. Valakh, N. I. Klyui, V. P. Mel’nik, A. B. Romanyuk, B. N. Romanyuk, V. A. Yukhimchuk

Journal:

Year:

1998

Language:

english

File:

PDF, 91 KB

english, 1998

3

Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon

O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev

Journal:

Year:

1998

Language:

english

File:

PDF, 86 KB

english, 1998

4

Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06contacts near the metal-insulator transition

T. Yu. Allen, Kh. G. Nazhmudinov, T. A. Polyanskaya

Journal:

Year:

1998

Language:

english

File:

PDF, 149 KB

english, 1998

5

Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivityn-Si

N. I. Bochkareva, A. V. Klochkov

Journal:

Year:

1998

Language:

english

File:

PDF, 153 KB

english, 1998

6

Macroscopic ion traps at the silicon-oxide interface

S. G. Dmitriev, Yu. V. Markin

Journal:

Year:

1998

Language:

english

File:

PDF, 115 KB

english, 1998

7

Manifestations of the deneutralization of mobile charges in SiO2in the spectroscopy of the silicon-oxide interface

S. G. Dmitriev, Yu. V. Markin

Journal:

Year:

1998

Language:

english

File:

PDF, 82 KB

english, 1998

8

Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4plasma followed by low-temperature annealing

K. S. Zhuravlev, A. L. Sokolov, K. P. Mogil’nikov

Journal:

Year:

1998

Language:

english

File:

PDF, 102 KB

english, 1998

9

Weak localization and intersubband transitions inδ-doped GaAs

G. M. Min’kov, S. A. Negashev, O. É. Rut, A. V. Germanenko, V. V. Valyaev, V. L. Gurtovoi

Journal:

Year:

1998

Language:

english

File:

PDF, 95 KB

english, 1998

10

Quantum corrections to the conductivity of a two-dimensional system with antidots

M. M. Makhmudian, M. V. Éntin

Journal:

Year:

1998

Language:

english

File:

PDF, 106 KB

english, 1998

11

Transient processes in photocathodes at high laser intensities

B. I. Reznikov, A. V. Subashiev

Journal:

Year:

1998

Language:

english

File:

PDF, 159 KB

english, 1998

12

Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions

N. M. Volodin, A. V. Khanova, P. S. Smertenko, L. L. Fedorenko

Journal:

Year:

1998

Language:

english

File:

PDF, 112 KB

english, 1998

13

Continuous stimulated emission atT=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel’nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, Zh. I. Alferov

Journal:

Year:

1998

Language:

english

File:

PDF, 516 KB

english, 1998

14

Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)]

I. K. Kamilov, A. A. Stepurenko, A. S. Kovalev

Journal:

Year:

1998

File:

PDF, 20 KB

1998

15

Solomon Meerovich Ryvkin (On his 80th Birthday)

Journal:

Year:

1998

Language:

english

File:

PDF, 211 KB

english, 1998