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Volume 32; Issue 9
Main
Semiconductors
Volume 32; Issue 9
Semiconductors
Volume 32; Issue 9
1
Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals
A. F. Revinskii
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 107 KB
Your tags:
english, 1998
2
Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon
O. V. Aleksandrov
,
A. O. Zakhar’in
,
N. A. Sobolev
,
E. I. Shek
,
M. I. Makoviichuk
,
E. O. Parshin
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 62 KB
Your tags:
english, 1998
3
Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride
S. V. Ordin
,
B. N. Sharupin
,
M. I. Fedorov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 167 KB
Your tags:
english, 1998
4
Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium
A. N. Veis
,
S. A. Nemov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 48 KB
Your tags:
english, 1998
5
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
V. B. Neimash
,
V. M. Siratskii
,
A. N. Krachinskii
,
E. A. Puzenko
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 82 KB
Your tags:
english, 1998
6
The effect of antisite defects on the band structure and dielectric function of In1−xGaxSb solid solutions
V. G. Deibuk
,
V. I. Studenets
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 93 KB
Your tags:
english, 1998
7
Pressure dependence of the dielectric and optical properties of wide-gap semiconductors
S. Yu. Davydov
,
S. K. Tikhonov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 64 KB
Your tags:
english, 1998
8
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
V. G. Mokerov
,
Yu. V. Fedorov
,
A. V. Guk
,
G. B. Galiev
,
V. A. Strakhov
,
N. G. Yaremenko
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 70 KB
Your tags:
english, 1998
9
Mobility of charge carriers in double-layer PbTe/PbS structures
O. A. Aleksandrova
,
R. Ts. Bondokov
,
I. V. Saunin
,
Yu. M. Tairov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 102 KB
Your tags:
english, 1998
10
Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures
G. M. Min’kov
,
A. V. Germanenko
,
O. É. Rut
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1998
11
Current transport in porousp-Si and Pd-porous Si structures
S. V. Slobodchikov
,
Kh. M. Salikhov
,
E. V. Russu
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 75 KB
Your tags:
english, 1998
12
Determining surface recombination rates in epitaxial layers ofn-CdxHg1−xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers
P. A. Borodovskii
,
A. F. Buldygin
,
V. S. Varavin
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1998
13
Physical model and results of numerical simulation of the degradation of a Si/SiO2structure as a result of annealing in vacuum
G. V. Gadiyak
,
J. H. Stathis
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 77 KB
Your tags:
english, 1998
14
The effect of a nonmonotonic potential profile on edge magnetic states
E. B. Gorokhov
,
D. A. Romanov
,
S. A. Studenikin
,
V. A. Tkachenko
,
O. A. Tkachenko
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 254 KB
Your tags:
english, 1998
15
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
I. A. Karpovich
,
A. V. Anshon
,
D. O. Filatov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 81 KB
Your tags:
english, 1998
16
Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters
S. N. Grinyaev
,
V. A. Chaldyshev
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 155 KB
Your tags:
english, 1998
17
Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
D. D. Bykanov
,
A. M. Kreshchuk
,
S. V. Novikov
,
T. A. Polyanskaya
,
I. G. Savel’ev
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 130 KB
Your tags:
english, 1998
18
Energy spectrum of a nonideal quantum well in an electric field
O. L. Lazarenkova
,
A. N. Pikhtin
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 162 KB
Your tags:
english, 1998
19
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A. R. Kovsh
,
A. E. Zhukov
,
A. Yu. Egorov
,
V. M. Ustinov
,
Yu. M. Shernyakov
,
M. V. Maksimov
,
A. F. Tsatsul’nikov
,
B. V. Volovik
,
A. V. Lunev
,
N. N. Ledentsov
,
P. S. Kop’ev
,
Zh. I. Alferov
,
D. Bimberg
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 72 KB
Your tags:
english, 1998
20
Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure
Yu. L. Ivánov
,
S. A. Morozov
,
V. M. Ustinov
,
A. E. Zhukov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 42 KB
Your tags:
english, 1998
21
Composition and porosity of multicomponent structures: porous silicon as a three-component system
L. V. Belyakov
,
T. L. Makarova
,
V. I. Sakharov
,
I. T. Serenkov
,
O. M. Sreseli
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 67 KB
Your tags:
english, 1998
22
Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities
B. I. Reznikov
,
A. V. Subashiev
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 171 KB
Your tags:
english, 1998
23
Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors
V. V. Vasil’ev
,
Yu. P. Mashukov
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 74 KB
Your tags:
english, 1998
24
Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm
A. A. Popov
,
V. V. Sherstnev
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 214 KB
Your tags:
english, 1998
25
Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
I. V. Grekhov
,
M. I. Veksler
,
P. A. Ivanov
,
T. P. Samsonova
,
A. F. Shulekin
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 51 KB
Your tags:
english, 1998
26
Physical properties of CuxAg1−xIn5S8single crystals and related surface-barrier structures
I. V. Bodnar’
,
E. A. Kudritskaya
,
I. K. Polushina
,
V. Yu. Rud’
,
Yu. V. Rud’
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 87 KB
Your tags:
english, 1998
27
Vladimir Idelevich Perel’ (On his 70th birthday)
Journal:
Semiconductors
Year:
1998
Language:
english
File:
PDF, 88 KB
Your tags:
english, 1998
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