Volume 33; Issue 12

Main
Semiconductors
Volume 33; Issue 12

Semiconductors

Volume 33; Issue 12

1

Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation

V. V. Kozlovskii, V. A. Kozlov

Journal:

Year:

1999

Language:

english

File:

PDF, 31 KB

english, 1999

2

Electronic properties of ZnGeP2crystals obtained by a solid-phase reaction

A. A. Vaipolin, Yu. V. Rud’, T. N. Ushakova, V. Yu. Rud’

Journal:

Year:

1999

Language:

english

File:

PDF, 64 KB

english, 1999

3

Behavior of manganese impurities in Hg3In2Te6

O. G. Grushka, Z. M. Grushka, V. M. Frasunyak, V. S. Gerasimenko

Journal:

Year:

1999

Language:

english

File:

PDF, 130 KB

english, 1999

4

Photoelectric properties of Hg1−xCdxTe single crystals grown from the vapor phase

S. S. Varshava, I. V. Kurilo, I. S. Virt, D. I. Tsyutsyura

Journal:

Year:

1999

Language:

english

File:

PDF, 47 KB

english, 1999

5

Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)

V. B. Neimash, E. A. Puzenko, A. N. Kabaldin, A. N. Kraichinskii, N. N. Kras’ko

Journal:

Year:

1999

Language:

english

File:

PDF, 56 KB

english, 1999

6

Donor-acceptor photoluminescence of weakly compensated GaN:Mg

V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, N. N. Zinov’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 134 KB

english, 1999

7

Cascade capture of electrons by dislocations in many-valley semiconductors

Journal:

Year:

1999

Language:

english

File:

PDF, 39 KB

english, 1999

8

Electrical properties of Hg1−xMnxTe-based photodiodes

L. A. Kosyachenko, I. M. Rarenko, O. A. Bodnaruk, Weiguo Sun

Journal:

Year:

1999

Language:

english

File:

PDF, 67 KB

english, 1999

9

Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice

M. V. Vyazovskii, G. A. Syrodoev

Journal:

Year:

1999

Language:

english

File:

PDF, 65 KB

english, 1999

10

Position of the Fermi level on an indium arsenide surface treated in sulfur vapor

N. N. Bezryadin, E. A. Tatokhin, A. V. Budanov, A. V. Linnik, I. N. Arsent’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 36 KB

english, 1999

11

Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe

A. D. Andreev, A. A. Lipovskii

Journal:

Year:

1999

Language:

english

File:

PDF, 79 KB

english, 1999

12

Superradiance in semiconductors

S. V. Zaitsev, L. A. Graham, D. L. Huffaker, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinsky, I. I. Novikov, P. S. Kop’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 83 KB

english, 1999

13

Effect ofγirradiation on the photoluminescence kinetics of porous silicon

V. F. Agekyan, Yu. A. Stepanov, V. V. Emtsev, A. A. Lebedev, D. S. Poloskin, A. D. Remenyuk

Journal:

Year:

1999

Language:

english

File:

PDF, 45 KB

english, 1999

14

Photodetectors based on osmium-doped silicon

M. S. Yunusov, R. A. Muminov, G. Nurkuziev, N. Gapparov, A. Kholboev

Journal:

Year:

1999

Language:

english

File:

PDF, 30 KB

english, 1999

15

Effect of liquid dielectrics on the efficiency of silicon solar cells

Yu. A. Abramyan, G. G. Karamyan, A. A. Murodyan, V. I. Stafeev, V. I. Serago

Journal:

Year:

1999

Language:

english

File:

PDF, 33 KB

english, 1999

16

Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm

A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, V. V. Sherstnev, Yu. P. Yakovlev, S. Civis

Journal:

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

17

Nonpolarizing radiation detectors based on wide-gap semiconductor crystals

P. G. Kasherininov, A. N. Lodygin, S. S. Martynov, V. S. Khrunov

Journal:

Year:

1999

Language:

english

File:

PDF, 44 KB

english, 1999