Volume 33; Issue 4

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Semiconductors
Volume 33; Issue 4

Semiconductors

Volume 33; Issue 4

1

Low-temperature relaxation of a solid solution of iron in gallium phosphide

E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, O. N. Morozkin

Journal:

Year:

1999

Language:

english

File:

PDF, 70 KB

english, 1999

2

Modeling Si nanoprecipitate formation in SiO2layers with excess Si atoms

A. F. Leier, L. N. Safronov, G. A. Kachurin

Journal:

Year:

1999

Language:

english

File:

PDF, 121 KB

english, 1999

3

Optical spectra and electronic structure of indium nitride

V. V. Sobolev, M. A. Zlobina

Journal:

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

4

Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon

N. A. Poklonskii, A. I. Syaglo

Journal:

Year:

1999

Language:

english

File:

PDF, 92 KB

english, 1999

5

Acoustostimulated activation of bound defects in CdHgTe alloys

A. I. Vlasenko, Ya. M. Olikh, R. K. Savkina

Journal:

Year:

1999

Language:

english

File:

PDF, 92 KB

english, 1999

6

A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation

N. A. Poklonskii, A. I. Syaglo, G. Biskupski

Journal:

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

7

Low-temperature photoluminescence in holmium-doped silicon

B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, E. O. Parshin

Journal:

Year:

1999

Language:

english

File:

PDF, 59 KB

english, 1999

8

Generation-recombination instabilities in thin-film structures

Journal:

Year:

1999

Language:

english

File:

PDF, 51 KB

english, 1999

9

Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures

V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud’, V. Yu. Rud’

Journal:

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

10

Analysis of mechanisms for electron scattering in GaAs/AlxGa1−xAs superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures

S. I. Borisenko, G. F. Karavaev

Journal:

Year:

1999

Language:

english

File:

PDF, 133 KB

english, 1999

11

Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells

V. E. Kudryashov, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, F. I. Manyakhin

Journal:

Year:

1999

Language:

english

File:

PDF, 131 KB

english, 1999

12

Photoionization of deep impurity centers in quantum well structures

V. I. Belyavskii, Yu. A. Pomerantsev

Journal:

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

13

Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity

B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, J. Leotin

Journal:

Year:

1999

Language:

english

File:

PDF, 151 KB

english, 1999

14

Conductivity relaxation in coated porous silicon after annealing

S. P. Zimin, A. N. Bragin

Journal:

Year:

1999

Language:

english

File:

PDF, 66 KB

english, 1999

15

Photomemory in CdTe thin-film solar cells

É. N. Voronkov, A. E. Sharonov, V. V. Kolobaev

Journal:

Year:

1999

Language:

english

File:

PDF, 63 KB

english, 1999

16

Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2solar cells

V. Yu. Rud’, Yu. V. Rud’, H. W. Schock

Journal:

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

17

Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host

A. F. Tsatsul’nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop’ev, Zh. I. Alfërov, I. É. Kozin, M. V. Belousov, D. Bimberg

Journal:

Year:

1999

Language:

english

File:

PDF, 75 KB

english, 1999

18

Influence of deep traps on current transport in Pd-p(n)-CdTe structures

S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu

Journal:

Year:

1999

Language:

english

File:

PDF, 57 KB

english, 1999

19

Effect of laser radiation on GaP epitaxial diode structures

V. V. Inyakov, E. N. Moos, Yu. A. Shrainer

Journal:

Year:

1999

Language:

english

File:

PDF, 50 KB

english, 1999

20

Vitali(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l} )Ivanovich Stafeev (on his 70th birthday)

Zh. I. Alferov, L. A. Bovina, V. I. Ivanov-Omskii, L. E. Vorob’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 178 KB

english, 1999

21

Aleksandr Aleksandrovich Lebedev (on his 70th birthday)

Journal:

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

22

Electrical and photoelectric characteristics of an isotypicn-ZnO-n-Si structure

S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu

Journal:

Year:

1999

Language:

english

File:

PDF, 76 KB

english, 1999

23

The influence of defect clusters on redistribution of doping impurities inn-andp-type Si0.7Ge0.3irradiated by reactor neutrons

A. P. Dolgolenko

Journal:

Year:

1999

Language:

english

File:

PDF, 81 KB

english, 1999

24

Surface ofn-type InP (100) passivated in sulfide solutions

V. N. Bessolov, M. V. Lebedev, D. R. T. Zahn

Journal:

Year:

1999

Language:

english

File:

PDF, 101 KB

english, 1999

25

Defects ina-Si:H films induced by Si ion implantation

Journal:

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

26

Absorption and the optical gap ofa-C:H films produced from acetylene plasmas

Journal:

Year:

1999

Language:

english

File:

PDF, 95 KB

english, 1999

27

Determination of the parameters of deep levels from the relaxational delay of breakdown of ap-njunction

S. V. Bulyarskii, Yu. N. Serëzhkin, V. K. Ionychev

Journal:

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

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