Volume 33; Issue 6

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Semiconductors
Volume 33; Issue 6

Semiconductors

Volume 33; Issue 6

1

INTAS-RFBR Seminar on rare-earth impurities in semiconductors and low-dimensional semiconductor structures, St. Petersburg State Technical University, October 26, 1998: Opening address

B. P. Zakharchenya

Journal:

Year:

1999

Language:

english

File:

PDF, 23 KB

english, 1999

2

Photoluminescence of erbium-doped silicon: Excitation power dependence

C. A. J. Ammerlaan, D. T. X. Thao, T. Gregorkiewicz, N. A. Sobolev

Journal:

Year:

1999

Language:

english

File:

PDF, 84 KB

english, 1999

3

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel, L. C. Kimerling

Journal:

Year:

1999

Language:

english

File:

PDF, 55 KB

english, 1999

4

Redistribution of erbium during the crystallization of buried amorphous silicon layers

O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, Yu. A. Kudryavtsev

Journal:

Year:

1999

Language:

english

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PDF, 68 KB

english, 1999

5

Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures

N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel’yanov, V. I. Vdovin

Journal:

Year:

1999

Language:

english

File:

PDF, 72 KB

english, 1999

6

Mechanisms of excitation of thef-femission in silicon codoped with erbium and oxygen

V. F. Masterov, L. G. Gerchikov

Journal:

Year:

1999

Language:

english

File:

PDF, 128 KB

english, 1999

7

Mechanism of erbium electroluminescence in hydrogenated amorph silicon

M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, K. D. Tséndin, I. N. Yassievich

Journal:

Year:

1999

Language:

english

File:

PDF, 48 KB

english, 1999

8

Effect of annealing on the optical and structural properties of GaN:Er

N. A. Sobolev, V. V. Lundin, V. I. Sakharov, I. T. Serenkov, A. S. Usikov, A. M. Emel’yanov

Journal:

Year:

1999

Language:

english

File:

PDF, 51 KB

english, 1999

9

Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures

A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov, V. V. Ushakov

Journal:

Year:

1999

Language:

english

File:

PDF, 58 KB

english, 1999

10

Photothermoacoustic and photoelectric microscopy of silicon

R. M. Burbelo, A. G. Kuz’mich, I. Ya. Kucherov

Journal:

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

11

Radiation-thermal activation of silicon implanted in gallium arsenide

V. M. Ardyshev, A. P. Surzhikov

Journal:

Year:

1999

Language:

english

File:

PDF, 79 KB

english, 1999

12

Photoionization of short-range acceptor states in uniaxially deformed semiconductors

A. A. Abramov, V. N. Tulupenko, V. T. Vas’ko, D. A. Firsov

Journal:

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

13

Electric and luminescence properties of GaAs-AIIBIVC2Vsingle crystals

I. K. Polushina, Yu. V. Rud’, V. Yu. Rud’

Journal:

Year:

1999

Language:

english

File:

PDF, 81 KB

english, 1999

14

Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors

I. I. Lyapilin, Kh. M. Bikkin

Journal:

Year:

1999

Language:

english

File:

PDF, 133 KB

english, 1999

15

Scanning tunneling microscopy investigation of the microtopography of SiO2and Si surfaces at the Si/SiO2interface in SIMOX structures

D. V. Vyalykh, S. I. Fedoseenko

Journal:

Year:

1999

Language:

english

File:

PDF, 452 KB

english, 1999

16

Reconstruction and electron states of a Ga2Se3-GaAs heterointerface

B. L. Agapov, N. N. Bezryadin, G. I. Kotov, M. P. Sumets, I. N. Arsent’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 195 KB

english, 1999

17

Sulfide passivation of GaAs power diodes

V. M. Botnaryuk, Yu. V. Zhilyaev, E. V. Konenkova

Journal:

Year:

1999

Language:

english

File:

PDF, 62 KB

english, 1999

18

Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor

N. N. Bezryadin, É. P. Domashevskaya, G. I. Kotov, R. V. Kuz’menko, M. P. Sumets, I. N. Arsent’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 175 KB

english, 1999

19

Deep-level recombination spectroscopy in GaP light-emitting diodes

S. V. Bulyarskii, M. O. Vorob’ev, N. S. Grushko, A. V. Lakalin

Journal:

Year:

1999

Language:

english

File:

PDF, 89 KB

english, 1999

20

Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbidep-nstructures

M. V. Belous, A. M. Genkin, V. K. Genkina

Journal:

Year:

1999

Language:

english

File:

PDF, 98 KB

english, 1999

21

Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy

G. É. Tsyrlin, V. N. Petrov, S. A. Masalov, A. O. Golubok

Journal:

Year:

1999

Language:

english

File:

PDF, 726 KB

english, 1999

22

Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition

V. F. Sapega, V. I. Perel’, D. N. Mirlin, I. A. Akimov, T. Ruf, M. Cardona, W. Winter, K. Eberl

Journal:

Year:

1999

Language:

english

File:

PDF, 70 KB

english, 1999

23

Effect of substrate material on the rate of growth and the optical parameters ofa-C:H layers

T. K. Zvonareva, L. V. Sharonova

Journal:

Year:

1999

Language:

english

File:

PDF, 93 KB

english, 1999

24

Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light

V. Yu. Rud’, Yu. V. Rud’, V. P. Khvostikov

Journal:

Year:

1999

Language:

english

File:

PDF, 103 KB

english, 1999

25

Increasing the power of broad-waveguide lasers by additional selection of transverse modes

I. A. Kostko, V. P. Evtikhiev, E. Yu. Kotel’nikov, G. G. Zegrya

Journal:

Year:

1999

Language:

english

File:

PDF, 199 KB

english, 1999

26

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

1999

Language:

english

File:

PDF, 101 KB

english, 1999

27

In Memory of Vadim Fedorovich Masterov

Journal:

Year:

1999

Language:

english

File:

PDF, 148 KB

english, 1999

28

Erbium-doped silicon epilayers grown by liquid-phase epitaxy

S. Binetti, S. Pizzini, A. Cavallini, B. Fraboni

Journal:

Year:

1999

Language:

english

File:

PDF, 50 KB

english, 1999

29

Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon

N. A. Sobolev, E. I. Shek, A. M. Emel’yanov, V. I. Vdovin, T. G. Yugova

Journal:

Year:

1999

Language:

english

File:

PDF, 57 KB

english, 1999