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Volume 34; Issue 2
Main
Semiconductors
Volume 34; Issue 2
Semiconductors
Volume 34; Issue 2
1
Modification of semiconductors with proton beams. A review
V. V. Kozlovskii
,
V. A. Kozlov
,
V. N. Lomasov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 203 KB
Your tags:
english, 2000
2
Electronic properties of variably charged defects in crystalline semiconductors
A. N. Kraichinskii
,
L. I. Shpinar
,
I. I. Yaskovets
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 71 KB
Your tags:
english, 2000
3
Electrical properties of InP irradiated with fast neutrons in a nuclear reactor
N. G. Kolin
,
D. I. Merkurisov
,
S. P. Solov’ev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 55 KB
Your tags:
english, 2000
4
Electrical properties of transmutation-doped indium phosphide
N. G. Kolin
,
D. I. Merkurisov
,
S. P. Solov’ev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 67 KB
Your tags:
english, 2000
5
Thermal acceptors in irradiated silicon
V. F. Stas’
,
I. V. Antonova
,
E. P. Neustroev
,
V. P. Popov
,
L. S. Smirnov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 77 KB
Your tags:
english, 2000
6
Influence of Au and Pt on the concentration profile of Mn in Si
G. S. Kulikov
,
Sh. A. Yusupova
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 29 KB
Your tags:
english, 2000
7
Variation in resistance of a nitrogen-enriched silicon layer as a result of the long-range effect of ion implantation
E. S. Demidov
,
V. V. Karzanov
,
K. A. Markov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 46 KB
Your tags:
english, 2000
8
Contribution of the electron subsystem of crystal into reactions between multicharge centers in semiconductors
N. I. Boyarkina
,
A. V. Vasil’ev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 62 KB
Your tags:
english, 2000
9
Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese
M. K. Bakhadyrkhanov
,
Kh. Azimkhuzhaev
,
N. F. Zikrillaev
,
A. B. Sabdullaev
,
É. Arzikulov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 44 KB
Your tags:
english, 2000
10
Reconstruction transition (4×2) → (2×4) on the (001) surfaces of InAs and GaAs
Yu. G. Galitsyn
,
S. P. Moshchenko
,
A. S. Suranov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 132 KB
Your tags:
english, 2000
11
Physicochemical properties of the surface and near-surface region of epitaxialn-GaAs layers modified by atomic hydrogen
N. A. Torkhov
,
S. V. Eremeev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 342 KB
Your tags:
english, 2000
12
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
M. M. Sobolev
,
I. V. Kochnev
,
V. M. Lantratov
,
N. A. Bert
,
N. A. Cherkashin
,
N. N. Ledentsov
,
D. A. Bedarev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 237 KB
Your tags:
english, 2000
13
On the constriction of the Hall current in the Corbino disk under quantum Hall effect conditions
V. B. Shikin
,
Yu. V. Shikina
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 90 KB
Your tags:
english, 2000
14
The effect of ultrafast low-temperature doping of vitreous As-Se films with copper, silver, gold, and chromium (The Khan effect)
M. A. Korzhuev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 70 KB
Your tags:
english, 2000
15
Scanning tunneling microscopy of films of amorphous carbon doped with copper
A. O. Golubok
,
O. M. Gorbenko
,
T. K. Zvonareva
,
S. A. Masalov
,
V. V. Rozanov
,
S. G. Yastrebov
,
V. I. Ivanov-Omskii
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 147 KB
Your tags:
english, 2000
16
Mechanisms of transport and injection of carriers into a porous silicon: Electroluminescence in electrolytes
D. N. Goryachev
,
G. Polisskii
,
O. M. Sreseli
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 110 KB
Your tags:
english, 2000
17
Quantum-mechanical features of the field effect in heterotransistors with modulation-and δ-doped regions
V. A. Gergel’
,
V. G. Mokerov
,
M. V. Timofeev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 64 KB
Your tags:
english, 2000
18
Ultraquasi-hydrodynamic electron transport in submicrometer field effect MIS transistors and heterotransistors
V. A. Gergel’
,
V. G. Mokerov
,
M. V. Timofeev
,
Yu. V. Fedorov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 50 KB
Your tags:
english, 2000
19
Single-mode InAsSb/InAsSbP laser (λ≈3.2 μm) Tunable over 100 Å
A. P. Danilova
,
A. N. Imenkov
,
N. M. Kolchanova
,
S. Civis
,
V. V. Sherstnev
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 87 KB
Your tags:
english, 2000
20
6H-SiC epilayers as nuclear particle detectors
A. A. Lebedev
,
N. S. Savkina
,
A. M. Ivanov
,
N. B. Strokan
,
D. V. Davydov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 88 KB
Your tags:
english, 2000
21
Magnetotransport in a semimetal channel inp-Ga1−xInxAsySb1−y/p-InAs heterostructures with various compositions of the solid solution
T. I. Voronina
,
T. S. Lagunova
,
M. P. Mikhailova
,
K. D. Moiseev
,
A. E. Rozov
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 84 KB
Your tags:
english, 2000
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