Volume 34; Issue 5

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Semiconductors
Volume 34; Issue 5

Semiconductors

Volume 34; Issue 5

1

Interaction between copper and antimony in a solid solution based on germanium with the formation of a charged complex

V. M. Glazov, A. Ya. Potemkin

Journal:

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

2

Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

V. P. Kuznetsov, R. A. Rubtsova

Journal:

Year:

2000

Language:

english

File:

PDF, 118 KB

english, 2000

3

The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev, Yu. A. Nikolaev

Journal:

Year:

2000

Language:

english

File:

PDF, 54 KB

english, 2000

4

Carbon-stimulated increase in the concentration of gallium divacancies in semi-insulating undoped GaAs crystals

K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, O. N. Stril’chuk

Journal:

Year:

2000

Language:

english

File:

PDF, 44 KB

english, 2000

5

Effect of diffusion length and surface recombination on the photopleochroism of anisotropic crystals

G. A. Medvedkin

Journal:

Year:

2000

Language:

english

File:

PDF, 62 KB

english, 2000

6

Effect of diffusion length and surface recombination on the polarization quantum efficiency of anisotropic crystals

G. A. Medvedkin

Journal:

Year:

2000

Language:

english

File:

PDF, 51 KB

english, 2000

7

Thermoelectric power of then-InSb in a transverse quantizing magnetic field at a large temperature gradient

M. M. Gadzhialiev

Journal:

Year:

2000

Language:

english

File:

PDF, 34 KB

english, 2000

8

Influence of annealing on the dislocation-related electrical conductivity of germanium

S. A. Shevchenko

Journal:

Year:

2000

Language:

english

File:

PDF, 207 KB

english, 2000

9

Optical spectroscopy of excitonic states in CuInSe2

A. V. Mudryi, M. V. Yakushev, R. D. Tomlinson, A. E. Hill, R. D. Pilkington, I. V. Bodnar’, I. A. Viktorov, V. F. Gremenok, I. A. Shakin, A. I. Patuk

Journal:

Year:

2000

Language:

english

File:

PDF, 58 KB

english, 2000

10

Effect of uniaxial deformation on electrophysical parameters of 6H-SiCp-nstructures

Journal:

Year:

2000

Language:

english

File:

PDF, 47 KB

english, 2000

11

Deep-level centers in undopedp-GaAs layers grown by liquid phase epitaxy

L. S. Berman, V. G. Danil’chenko, V. I. Korol’kov, F. Yu. Soldatenkov

Journal:

Year:

2000

Language:

english

File:

PDF, 58 KB

english, 2000

12

Photocapacitance effect in a monopolar metal-insulator-semiconductor capacitor at low temperatures

Journal:

Year:

2000

Language:

english

File:

PDF, 71 KB

english, 2000

13

Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal

D. A. Usanov, A. V. Skripal’, N. V. Ugryumova, S. B. Venig, V. E. Orlov

Journal:

Year:

2000

Language:

english

File:

PDF, 64 KB

english, 2000

14

Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

G. Gulyamov, M. G. Dadamirzaev, S. R. Boidedaev

Journal:

Year:

2000

Language:

english

File:

PDF, 51 KB

english, 2000

15

Photosensitivity of thin-film structures based on (CuInSe2)x(2ZnSe)1−xsolid solutions

V. Yu. Rud’, Yu. V. Rud’, R. N. Bekimbetov, V. F. Gremenok, I. V. Bodnar’, L. V. Rusak

Journal:

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

16

Shallow acceptors in strained Ge/Ge1−xSixheterostructures with quantum wells

V. Ya. Aleshkin, B. A. Andreev, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, O. A. Kuznetsov

Journal:

Year:

2000

Language:

english

File:

PDF, 69 KB

english, 2000

17

Exciton energy states and photoluminescence spectra of the strained-layer ZnS-ZnSe superlattices

N. V. Bondar’, V. V. Tishchenko, M. S. Brodin

Journal:

Year:

2000

Language:

english

File:

PDF, 101 KB

english, 2000

18

Zero-phonon and dipole Γ-Xelectron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field

V. Ya. Aleshkin, A. A. Andronov

Journal:

Year:

2000

Language:

english

File:

PDF, 108 KB

english, 2000

19

On the spectra of electrons and holes in an open spherical nanoheterostructure (through the example of GaAs/AlxGa1−xAs/GaAs)

N. V. Tkach, V. A. Holovatsky, O. N. Voitsekhivska

Journal:

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

20

Study of decay of elastically strained germanium film at the silicon surface

I. V. Zakurdaev, M. V. Baizer, S. Yu. Sadof’ev, M. M. Rzaev

Journal:

Year:

2000

Language:

english

File:

PDF, 270 KB

english, 2000

21

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev, B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V. A. Odnoblyudov, A. A. Suvorova, A. F. Tsatsul’nikov, Yu. M. Sh

Journal:

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

22

Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering

P. A. Ivanov, O. I. Kon’kov, E. I. Terukov

Journal:

Year:

2000

Language:

english

File:

PDF, 76 KB

english, 2000

23

Charge-carrier transport in a double-collector magnetotransistor

M. A. Glauberman, V. V. Kozel, A. V. Nakhabin

Journal:

Year:

2000

Language:

english

File:

PDF, 47 KB

english, 2000

24

A method for modulation of the charge-carrier mobility in a semiconductor

V. V. Novikov, R. R. Vardanyan, É. E. Pakhomov

Journal:

Year:

2000

Language:

english

File:

PDF, 44 KB

english, 2000

25

Power conversion efficiency of quantum dot laser diodes

A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V. A. Odnoblyudov, V. M. Ustinov, Yu. M. Shernyakov, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Al

Journal:

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

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