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Volume 35; Issue 2
Main
Semiconductors
Volume 35; Issue 2
Semiconductors
Volume 35; Issue 2
1
Study of photoluminescence of SiOxNyfilms implanted with Ge+ions and annealed under the conditions of hydrostatic pressure
I. E. Tyschenko
,
K. S. Zhuravlev
,
E. N. Vandyshev
,
A. Misiuk
,
R. A. Yankov
,
L. Rebohle
,
W. Skorupa
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 146 KB
Your tags:
english, 2001
2
Quasi-local impurity states in uniaxially compressedp-type Ge
A. A. Abramov
,
V. N. Tulupenko
,
D. A. Firsov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 50 KB
Your tags:
english, 2001
3
The effect of stress fields produced by growth defects on the dielectric photoresponse of Cd1−xZnxTe crystals
I. A. Klimenko
,
V. K. Komar’
,
V. P. Migal’
,
D. P. Nalivaiko
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 53 KB
Your tags:
english, 2001
4
Nickel impurity excitons and photoinduced lattice distortion in ZnSe1−ySy:Ni and Zn1−xCdxSe:Ni solid solutions
V. I. Sokolov
,
V. N. Starovoitova
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 81 KB
Your tags:
english, 2001
5
The edge ultraviolet luminescence of GaN:Zn films activated in a nitrogen plasma
A. N. Georgobiani
,
A. N. Gruzintsev
,
U. A. Aminov
,
M. O. Vorob’ev
,
I. I. Khodos
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 169 KB
Your tags:
english, 2001
6
Reflection spectra of doped bismuth-antimony crystals in the far-infrared region of the spectrum
V. M. Grabov
,
N. P. Stepanov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 54 KB
Your tags:
english, 2001
7
The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide
N. S. Savkina
,
V. V. Ratnikov
,
V. B. Shuman
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 205 KB
Your tags:
english, 2001
8
Hopping transport in doped (Pb0.78Sn0.22)1−xInxTe solid solutions
Yu. I. Ravich
,
S. A. Nemov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 80 KB
Your tags:
english, 2001
9
The spread of cross section for electron capture by a trap with a discrete energy level in γ-La2S3crystals
E. M. Zobov
,
M. A. Rizakhanov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 89 KB
Your tags:
english, 2001
10
Photoluminescence of CuGaTeAsand CuGaSnGacomplexes inn-GaAs under resonance polarized excitation
N. S. Averkiev
,
A. A. Gutkin
,
V. E. Sedov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 73 KB
Your tags:
english, 2001
11
Electrical conductivity ofn-InSb films in strong electric fields
Yu. A. Nikol’skii
,
S. E. Zyuzin
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 45 KB
Your tags:
english, 2001
12
Surface gettering of background impurities and defects in GaAs wafers
L. S. Vlasenko
,
A. T. Gorelenok
,
V. V. Emtsev
,
A. V. Kamanin
,
D. S. Poloskin
,
N. M. Shmidt
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 55 KB
Your tags:
english, 2001
13
Mechanism of reverse current in the Al/p-InP schottky diodes
P. A. Pipinys
,
A. K. Rimeika
,
V. A. Lapeika
,
A. V. Pipiniene
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 70 KB
Your tags:
english, 2001
14
Quasi-static ion currents in thin insulating films of metal-insulator-semiconductor structures and the distribution of ions in the films
S. G. Dmitriev
,
Yu. V. Markin
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 114 KB
Your tags:
english, 2001
15
Simulation of hysteresis in a metal-ferroelectric-semiconductor structure
L. S. Berman
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 45 KB
Your tags:
english, 2001
16
Investigation of a change in the chemical composition of the surface of CdxHg1−xTe samples as a result of treatment by N2O and H2gases activated in a high-frequency discharge
V. V. Vasil’ev
,
T. I. Zakhar’yash
,
V. G. Kesler
,
I. O. Parm
,
A. P. Solov’ev
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 52 KB
Your tags:
english, 2001
17
Tunneling via impurity states related to theXvalley in a thin AlAs barrier
Yu. N. Khanin
,
K. S. Novoselov
,
E. E. Vdovin
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 72 KB
Your tags:
english, 2001
18
Spectra of the field and current oscillations in superlattices exposed to terahertz laser radiation
Yu. A. Romanov
,
Yu. Yu. Romanova
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2001
19
Investigation of the SiC/(SiC)1−x(AlN)xheterostructures by the method of capacitance-voltage characteristics
M. K. Kurbanov
,
B. A. Bilalov
,
Sh. A. Nurmagomedov
,
G. K. Safaraliev
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 52 KB
Your tags:
english, 2001
20
Electron localization and bloch oscillations in quantum-dot superlattices under a constant electric field
I. A. Dmitriev
,
R. A. Suris
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 204 KB
Your tags:
english, 2001
21
Optical properties of amorphous carbon films deposited by magnetron sputtering of graphite
V. I. Ivanov-Omskii
,
A. V. Tolmatchev
,
S. G. Yastrebov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 88 KB
Your tags:
english, 2001
22
Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films
N. A. Kaliteevskaya
,
R. P. Seisyan
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 56 KB
Your tags:
english, 2001
23
Investigation of surface morphology of copper-modified amorphous carbon films
T. K. Zvonareva
,
V. I. Ivanov-Omskii
,
S. G. Yastrebov
,
A. O. Golubok
,
O. M. Gorbenko
,
V. V. Rozanov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 98 KB
Your tags:
english, 2001
24
High-power high-voltage bipolar transistors based on complex semiconductor structures
M. Yu. Volokobinskii
,
I. N. Komarov
,
T. V. Matyukhina
,
V. I. Reshetnikov
,
A. A. Rush
,
I. V. Falina
,
A. S. Yastrebov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 57 KB
Your tags:
english, 2001
25
Optical study of InP quantum dots
D. A. Vinokurov
,
V. A. Kapitonov
,
D. N. Nikolaev
,
Z. N. Sokolova
,
I. S. Tarasov
Journal:
Semiconductors
Year:
2001
Language:
english
File:
PDF, 44 KB
Your tags:
english, 2001
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