Volume 36; Issue 2

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Semiconductors
Volume 36; Issue 2

Semiconductors

Volume 36; Issue 2

1

Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors

Journal:

Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

2

Electrical properties of silicon layers implanted with ytterbium ions

O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev

Journal:

Year:

2002

Language:

english

File:

PDF, 58 KB

english, 2002

3

Effect of optical radiation on internal friction in piezoelectric semiconductors with deep-level centers

V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, N. P. Yaroslavtsev

Journal:

Year:

2002

Language:

english

File:

PDF, 87 KB

english, 2002

4

“LO-Phonon” correlation between picosecond superluminescence spectrum and special features of absorption spectrum in GaAs for non-Fermi distribution of carriers induced by picosecond light pulse

N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, S. V. Stegantsov

Journal:

Year:

2002

Language:

english

File:

PDF, 71 KB

english, 2002

5

Linear photovoltaic effect in gyrotropic crystals

R. Ya. Rasulov, Yu. E. Salenko, D. Kambarov

Journal:

Year:

2002

Language:

english

File:

PDF, 97 KB

english, 2002

6

Optical properties of fluorite in a wide energy range

V. V. Sobolev, A. I. Kalugin

Journal:

Year:

2002

Language:

english

File:

PDF, 76 KB

english, 2002

7

Influence of laser pump density on the characteristic time constant and the intermediate-field electromodulationE0component of the photoreflectance signal

R. V. Kuz’menko, A. V. Ganzha, É. P. Domashevskaya, S. Hildenbrandt, J. Schreiber

Journal:

Year:

2002

Language:

english

File:

PDF, 52 KB

english, 2002

8

Effect of ionization on the behavior of silicon in gallium arsenide subjected to electron-beam annealing

M. V. Ardyshev, V. M. Ardyshev

Journal:

Year:

2002

Language:

english

File:

PDF, 48 KB

english, 2002

9

Annealing of deep boron centers in silicon carbide

V. S. Ballandovich, E. N. Mokhov

Journal:

Year:

2002

Language:

english

File:

PDF, 86 KB

english, 2002

10

Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs

V. F. Kovalenko, M. B. Litvinova, S. V. Shutov

Journal:

Year:

2002

Language:

english

File:

PDF, 66 KB

english, 2002

11

Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy

V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil’nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, G. Pensl

Journal:

Year:

2002

Language:

english

File:

PDF, 70 KB

english, 2002

12

Optical absorption in (Pb0.78Sn0.22)1−XInXTe (X=0.001–0.005)

Journal:

Year:

2002

Language:

english

File:

PDF, 65 KB

english, 2002

13

Distribution of charge carriers in dissipative semiconductor structures

I. K. Kamilov, A. A. Stepurenko, A. S. Kovalev

Journal:

Year:

2002

Language:

english

File:

PDF, 83 KB

english, 2002

14

The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors

V. F. Kovalenko, A. Yu. Mironchenko, S. V. Shutov

Journal:

Year:

2002

Language:

english

File:

PDF, 66 KB

english, 2002

15

Silicon surface treatment by pulsed nitrogen plasma

F. B. Baimbetov, B. M. Ibraev, A. M. Zhukeshov

Journal:

Year:

2002

Language:

english

File:

PDF, 36 KB

english, 2002

16

Role of surface segregation in formation of abrupt interfaces in Si/Si1−xGexheterocompositions grown by molecular-beam epitaxy with combined sources

L. K. Orlov, N. L. Ivina

Journal:

Year:

2002

Language:

english

File:

PDF, 78 KB

english, 2002

17

Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures

S. G. Dmitriev, Yu. V. Markin

Journal:

Year:

2002

Language:

english

File:

PDF, 85 KB

english, 2002

18

Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, T. S. Cheng

Journal:

Year:

2002

Language:

english

File:

PDF, 67 KB

english, 2002

19

Energy spectrum and optical properties of the quantum dot-impurity center complex

V. D. Krevchik, A. V. Levashov

Journal:

Year:

2002

Language:

english

File:

PDF, 72 KB

english, 2002

20

Injection excitation of luminescence in multilayernc-Si/insulator structures

Yu. A. Berashevich, B. V. Kamenev, V. E. Borisenko

Journal:

Year:

2002

Language:

english

File:

PDF, 68 KB

english, 2002

21

Temperature dependence of the optical energy gap for the CdSxSe1−xquantum dots

V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, N. I. Malysh

Journal:

Year:

2002

Language:

english

File:

PDF, 62 KB

english, 2002

22

The dicke superradiation in quantum heterostructures under optical pumping

A. I. Klimovskaya, E. G. Gule, Yu. A. Driga

Journal:

Year:

2002

Language:

english

File:

PDF, 35 KB

english, 2002

23

Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range

N. N. Zinov’ev, A. V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, J. M. Chamberlain

Journal:

Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

24

Effect of thermal treatment on structure and properties ofa-Si:H films obtained by cyclic deposition

V. P. Afanas’ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, E. I. Terukov

Journal:

Year:

2002

Language:

english

File:

PDF, 155 KB

english, 2002

25

Optimal doping of the drift region in unipolar diodes and transistors

A. S. Kyuregyan

Journal:

Year:

2002

Language:

english

File:

PDF, 54 KB

english, 2002

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