Volume 40; Issue 2

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Semiconductors
Volume 40; Issue 2

Semiconductors

Volume 40; Issue 2

1

The effect of the hydrogen state in lattice on the introduction efficiency of donor centers in oxygen-containing silicon

V. V. Bolotov, G. N. Kamaev, A. V. Noskov, S. A. Chernyaev, V. E. Roslikov

Journal:

Year:

2006

Language:

english

File:

PDF, 186 KB

english, 2006

2

Stability of the photoresponse of Cd1−xZnxTe crystals

V. K. Komar, V. P. Mygal, S. V. Sulima, A. S. Phomin

Journal:

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

3

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type

V. A. Romaka, Yu. V. Stadnyk, M. G. Shelyapina, D. Fruchart, V. F. Chekurin, L. P. Romaka, Yu. K. Gorelenko

Journal:

Year:

2006

Language:

english

File:

PDF, 221 KB

english, 2006

4

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

D. I. Bletskan, J. J. Madyar, V. N. Kabaciy

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Year:

2006

Language:

english

File:

PDF, 220 KB

english, 2006

5

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals

O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskiĭ, P. M. Fochuk, O. M. Strilchuk, S. G. Krylyuk, D. V. Korbutyak

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Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

6

Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components

Yu. V. Klevkov, V. P. Martovitskiĭ, V. S. Bagaev, V. S. Krivobok

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Year:

2006

Language:

english

File:

PDF, 298 KB

english, 2006

7

Monte Carlo simulation of the Dember effect inn-InAs exposed to femtosecond pulse laser excitation

Journal:

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

8

Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor

V. A. Bogdanova, N. A. Davletkil’deev, N. A. Semikolenova, E. N. Sidorov

Journal:

Year:

2006

Language:

english

File:

PDF, 190 KB

english, 2006

9

Photosensitivity of Pb1−xSnxTe:In films in the terahertz region of the spectrum

A. N. Akimov, V. G. Erkov, V. V. Kubarev, E. L. Molodtsova, A. É. Klimov, V. N. Shumskiĭ

Journal:

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

10

Conduction mechanisms of magnetic semiconductors with a garnet structure in relation to variable-valence impurity concentration

M. F. Bulatov, Yu. N. Parkhomenko

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Year:

2006

Language:

english

File:

PDF, 153 KB

english, 2006

11

A mechanism of variation in the electrical properties of polycrystallinep-PbSe films as a result of irradiation with α particles

Journal:

Year:

2006

Language:

english

File:

PDF, 256 KB

english, 2006

12

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

A. A. Evtukh, É. B. Kaganovich, É. G. Manoĭlov, N. A. Semenenko

Journal:

Year:

2006

Language:

english

File:

PDF, 229 KB

english, 2006

13

Dynamics of the defects recharging in coarse-grainedp-CdTe films

Kh. Kh. Ismailov, Zh. Zhanabergenov, Sh. A. Mirsagatov, S. Zh. Karazhanov

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Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

14

Methods for the doping of silicon layers in growth by sublimation MBE

V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, D. V. Shengurov, S. A. Denisov

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Year:

2006

Language:

english

File:

PDF, 236 KB

english, 2006

15

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures

A. G. Zhdan, G. V. Chucheva, E. I. Goldman

Journal:

Year:

2006

Language:

english

File:

PDF, 229 KB

english, 2006

16

Properties of the CuInS2surface and the effect of organic layers

A. B. Verbitskiĭ, Ya. I. Vertsimakha, P. N. Lutsyk, S. L. Studzinskiĭ, S. Bereznev, J. Kois

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Year:

2006

Language:

english

File:

PDF, 225 KB

english, 2006

17

Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation

V. A. Volodin, A. I. Yakimov, A. V. Dvurechenskiĭ, M. D. Efremov, A. I. Nikiforov, E. I. Gatskevich, G. D. Ivlev, G. Yu. Mikhalev

Journal:

Year:

2006

Language:

english

File:

PDF, 244 KB

english, 2006

18

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

V. A. Kul’bachinskiĭ, V. A. Rogozin, V. G. Kytin, R. A. Lunin, B. N. Zvonkov, Z. M. Dashevsky, V. A. Casian

Journal:

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

19

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots

S. I. Pokutniĭ

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Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

20

The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9superlattice with vertically correlated quantum dots

N. V. Sibirev, V. G. Talalaev, A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskiĭ, N. D. Zakharov, P. Werner

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Year:

2006

Language:

english

File:

PDF, 223 KB

english, 2006

21

Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, D. N. Lobanov, A. V. Novikov, M. V. Shaleev

Journal:

Year:

2006

Language:

english

File:

PDF, 243 KB

english, 2006

22

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier

J. A. Berashevich, S. K. Lazarouk, V. E. Borisenko

Journal:

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

23

Unusual photoelectric properties of polymeric composites containing heteropolynuclear complexes of transition metals

N. A. Davidenko, V. N. Kokozay, I. I. Davidenko, O. V. Nesterova, D. V. Shevchenko

Journal:

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006