Volume 40; Issue 8

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Semiconductors
Volume 40; Issue 8

Semiconductors

Volume 40; Issue 8

1

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs

Journal:

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006

2

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

O. V. Aleksandrov

Journal:

Year:

2006

Language:

english

File:

PDF, 174 KB

english, 2006

3

Planar lateral crystallization of the cobalt-silicide phase on silicon surface

I. V. Belousov, G. V. Kuznetsov, O. P. Pchelyakov

Journal:

Year:

2006

Language:

english

File:

PDF, 251 KB

english, 2006

4

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon

A. V. Sachenko, A. P. Gorban, V. P. Kostylyov, I. O. Sokolovsky

Journal:

Year:

2006

Language:

english

File:

PDF, 211 KB

english, 2006

5

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects inton-Si crystals

Journal:

Year:

2006

Language:

english

File:

PDF, 187 KB

english, 2006

6

Stabilization of the fermi level by a resonant gallium level in Pb1−xSnxTe alloys

E. P. Skipetrov, E. A. Zvereva, N. N. Dmitriev, A. V. Golubev, V. E. Slynko

Journal:

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

7

Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb1-xSnxS alloys

R. A. Castro, S. A. Nemov, P. P. Seregin

Journal:

Year:

2006

Language:

english

File:

PDF, 186 KB

english, 2006

8

Specific features of transmutational doping of30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance

P. G. Baranov, B. Ya. Ber, O. N. Godisov, I. V. Il’in, A. N. Ionov, A. K. Kaliteevskiĭ, M. A. Kaliteevskiĭ, I. M. Lazebnik, A. Yu. Safronov, H. -J. Pohl, H. Riemann, N. V. Abrosimov, P. S. Kop’ev, A.

Journal:

Year:

2006

Language:

english

File:

PDF, 293 KB

english, 2006

9

Characteristics of the oxide-p-InSe heterojunctions exposed to irradiation with X-ray photons

Z. D. Kovalyuk, V. N. Katerynchuk, O. A. Politanska, N. D. Raransky

Journal:

Year:

2006

Language:

english

File:

PDF, 201 KB

english, 2006

10

Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide

I. L. Baranov, L. V. Tabulina, L. S. Stanovaya, T. G. Rusalskaya

Journal:

Year:

2006

Language:

english

File:

PDF, 167 KB

english, 2006

11

Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures

N. T. Gurin, A. M. Afanas’ev, O. Yu. Sabitov, D. V. Ryabov

Journal:

Year:

2006

Language:

english

File:

PDF, 296 KB

english, 2006

12

Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses

N. V. Bondar, M. S. Brodyn, G. M. Tel’biz

Journal:

Year:

2006

Language:

english

File:

PDF, 206 KB

english, 2006

13

Excitonic photoluminescence of silicon quantum-well structures

A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, I. M. Kupchak

Journal:

Year:

2006

Language:

english

File:

PDF, 258 KB

english, 2006

14

Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures

V. A. Petrov, A. V. Nikitin

Journal:

Year:

2006

Language:

english

File:

PDF, 259 KB

english, 2006

15

Low-temperature materials and thin-film transistors for electronics on flexible substrates

A. Sazonov, M. Meitine, D. Stryakhilev, A. Nathan

Journal:

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

16

Specific features of anisotropic optical thermoelements

A. A. Ashcheulov, I. V. Gutsul

Journal:

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

17

InAs flip-chip LEDs with InGaAsSb buffer layers

N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyĭ, N. M. Stus’, V. V. Shustov, N. G. Tarakanova

Journal:

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

18

Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode

A. V. Ankudinov, V. P. Evtikhiev, K. S. Ladutenko, A. N. Titkov, R. Laiho

Journal:

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

19

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers

S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, K. S. Borschev, D. A. Vinokurov, I. S. Tarasov

Journal:

Year:

2006

Language:

english

File:

PDF, 207 KB

english, 2006