Volume 40; Issue 9

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Semiconductors
Volume 40; Issue 9

Semiconductors

Volume 40; Issue 9

1

Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure

S. S. Khludkov, O. B. Koretskaya, G. R. Burnashova

Journal:

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

2

Charge-carrier transport in annealed coarse-and fine-grained CdTe polycrystals

Yu. V. Klevkov, S. A. Kolosov, A. F. Plotnikov

Journal:

Year:

2006

Language:

english

File:

PDF, 183 KB

english, 2006

3

Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity

V. V. Krivolapchyuk, M. M. Mezdrogina, Yu. V. Kozhanova, S. N. Rodin

Journal:

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

4

Modification of zinc sulfide phosphors by irradiation with gamma-ray photons and electrons

M. M. Sychov, E. V. Komarov, L. V. Grigor’ev, S. V. Myakin, I. V. Vasil’eva, A. I. Kuznetsov, V. P. Usacheva

Journal:

Year:

2006

Language:

english

File:

PDF, 179 KB

english, 2006

5

Conductivity of Pb1−xSnxTe:In solid solutions in an ac electric field

A. E. Kozhanov, A. V. Nikorich, L. I. Ryabova, D. R. Khokhlov

Journal:

Year:

2006

Language:

english

File:

PDF, 181 KB

english, 2006

6

Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films

Journal:

Year:

2006

Language:

english

File:

PDF, 165 KB

english, 2006

7

Surface-barrier In/p-CuGa3Te5and In/p-CuGa5Te8structures: Fabrication and properties

V. Yu. Rud’, Yu. V. Rud’, I. V. Bodnar’

Journal:

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

8

Tunneling emission of electrons from semiconductors’ valence bands in high electric fields

V. D. Kalganov, N. V. Mileshkina, E. V. Ostroumova

Journal:

Year:

2006

Language:

english

File:

PDF, 244 KB

english, 2006

9

Point quantum contacts in disordered Si MOS structures with an inversionp-type channel: Nonlinear behavior of the system in the longitudinal and transverse electric fields

A. S. Vedeneev, M. A. Feklisov

Journal:

Year:

2006

Language:

english

File:

PDF, 205 KB

english, 2006

10

Effect of passivation of thep-CdTe surface in (NH4)2Sxon the current-voltage characteristics of contacts

Yu. V. Klevkov, S. A. Kolosov, A. F. Plotnikov

Journal:

Year:

2006

Language:

english

File:

PDF, 201 KB

english, 2006

11

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, L. Tsybeskov

Journal:

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

12

Mesoscopic fluctuations of conductance in a depleted built-in channel of a MOSFET

B. A. Aronzon, A. S. Vedeneev, A. A. Panferov, V. V. Ryl’kov

Journal:

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

13

Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

V. P. Klad’ko, S. V. Chornen’kii, A. V. Naumov, A. V. Komarov, M. Tacano, Yu. N. Sveshnikov, S. A. Vitusevich, A. E. Belyaev

Journal:

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

14

Investigation of electron properties of semiconductor surface by modulation spectroscopy of electroreflection

P. A. Gentsar, A. I. Vlasenko

Journal:

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

15

Circularly polarized photoluminescence related toA(+) centers in GaAs/AlGaAs quantum wells

P. V. Petrov, Yu. L. Ivanov, K. S. Romanov, A. A. Tonkikh, N. S. Averkiev

Journal:

Year:

2006

Language:

english

File:

PDF, 212 KB

english, 2006

16

The role of surface diffusion of adatoms in the formation of nanowire crystals

V. G. Dubrovskiĭ, N. V. Sibirev, R. A. Suris, G. É. Cirlin, V. M. Ustinov, M. Tchernysheva, J. C. Harmand

Journal:

Year:

2006

Language:

english

File:

PDF, 290 KB

english, 2006

17

Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width

N. V. Tkach, Yu. A. Sety

Journal:

Year:

2006

Language:

english

File:

PDF, 269 KB

english, 2006

18

Spectra of nuclear quadrupole resonance in vitreous semiconductors

I. P. Korneva, N. Ya. Sinyavskiĭ, M. Ostafin, B. Nogaj

Journal:

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

19

Spectrometric properties of SiC detectors based on ion-implantedp+-njunctions

E. V. Kalinina, V. G. Kossov, N. B. Strokan, A. M. Ivanov, R. R. Yafaev, G. F. Kholuyanov

Journal:

Year:

2006

Language:

english

File:

PDF, 194 KB

english, 2006

20

Room-temperature 1.3-μm lasing in a microdisk with quantum dots

N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev, A. G. Kuz’menkov, E. M. Arakcheeva, E. M. Tanklevskaya, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, N. N. Ledentsov

Journal:

Year:

2006

Language:

english

File:

PDF, 244 KB

english, 2006

21

Effect of stationary ionization of traps near the midgap on the spectrum of thermally stimulated capacitance of semiconductor devices

S. V. Bulyarskiĭ, A. V. Zhukov, O. S. Svetukhina, O. A. Trifonov

Journal:

Year:

2006

Language:

english

File:

PDF, 211 KB

english, 2006

22

Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

M. I. Vexler, S. E. Tyaginov, A. F. Shulekin, I. V. Grekhov

Journal:

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

23

Two-dimensional simulation of large-area InGaAs/InPp-i-nphotodiodes

S. A. Malyshev, A. L. Chizh, Yu. G. Vasileuski

Journal:

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006