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Volume 42; Issue 5
Main
Semiconductors
Volume 42; Issue 5
Semiconductors
Volume 42; Issue 5
1
Study of self-organization in disordered materials using information theory
T. G. Avacheva
,
N. V. Bodyagin
,
S. P. Vikhrov
,
S. M. Mursalov
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 319 KB
Your tags:
english, 2008
2
Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition
A. P. Belyaev
,
V. P. Rubets
,
V. V. Antipov
,
Kh. A. Toshkhodzhaev
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 179 KB
Your tags:
english, 2008
3
Optical and photoelectrical properties of AgCd2GaS4single-crystal compounds
L. V. Bulatetskaya
,
V. V. Bozhko
,
G. E. Davidyuk
,
O. V. Parasyuk
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 206 KB
Your tags:
english, 2008
4
Extrinsic conductivity of Hg3In2Te6single crystals
L. A. Kosyachenko
,
I. I. German
,
I. M. Rarenko
,
Z. I. Zakharuk
,
E. S. Nikonyuk
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 209 KB
Your tags:
english, 2008
5
Electroluminescence and phototrigger effect in single crystals of GaSxSe1−xalloys
A. G. Kyazym-Zade
,
V. M. Salmanov
,
A. G. Mokhtari
,
V. V. Dadashova
,
A. A. Agaeva
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 179 KB
Your tags:
english, 2008
6
YandZluminescence of polycrystalline cadmium telluride grown by a nonequilibrium reaction of the direct synthesis of components
V. V. Ushakov
,
Yu. V. Klevkov
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 209 KB
Your tags:
english, 2008
7
Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide
Ph. V. Makarenko
,
N. N. Pribylov
,
S. I. Rembeza
,
V. A. Mel’nik
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 184 KB
Your tags:
english, 2008
8
Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy
V. G. Bozhkov
,
N. A. Torkhov
,
I. V. Ivonin
,
V. A. Novikov
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 449 KB
Your tags:
english, 2008
9
Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
S. V. Zaitsev
,
A. A. Maksimov
,
I. I. Tartakovskiĭ
,
D. R. Yakovlev
,
A. Waag
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 255 KB
Your tags:
english, 2008
10
Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation
I. P. Lisovskyy
,
S. A. Zlobin
,
É. B. Kaganovich
,
É. G. Manoĭlov
,
E. V. Begun
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 226 KB
Your tags:
english, 2008
11
Theoretical study of auger recombination processes in deep quantum wells
L. V. Danilov
,
G. G. Zegrya
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 215 KB
Your tags:
english, 2008
12
Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well
L. V. Danilov
,
G. G. Zegrya
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 198 KB
Your tags:
english, 2008
13
Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation
D. V. Yurasov
,
Yu. N. Drozdov
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 181 KB
Your tags:
english, 2008
14
High-frequency properties of double-well nanostructures
V. F. Elesin
,
I. Yu. Kateev
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 186 KB
Your tags:
english, 2008
15
Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons
I. P. Lisovskyy
,
I. Z. Indutniĭ
,
M. V. Muravskaya
,
V. V. Voitovich
,
E. G. Gule
,
P. E. Shepelyavyĭ
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 237 KB
Your tags:
english, 2008
16
Hysteresis of tunnel current inw-GaN/AlGaN(0001) double-barrier structures
A. N. Razzhuvalov
,
S. N. Grinyaev
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 237 KB
Your tags:
english, 2008
17
Nature of damped current oscillations in the formation of a static acoustoelectric domain in an-InGaAs/GaAs quantum-well heterostructure
P. A. Belevskiĭ
,
M. N. Vinoslavskiĭ
,
V. N. Poroshin
,
I. V. Stroganova
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 232 KB
Your tags:
english, 2008
18
Electron diffraction studies of short-range order parameters in amorphous Yb1−xSmxAs2S4films
É. Sh. Hajiyev
,
A. I. Madadzade
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 165 KB
Your tags:
english, 2008
19
Thermal instability of silicon fullerenes stabilized with hydrogen: Computer simulation
A. E. Galashev
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 215 KB
Your tags:
english, 2008
20
Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids
É. A. Lebedev
,
M. Ya. Goikhman
,
D. M. Zhigunov
,
I. V. Podeshvo
,
S. E. Nikitin
,
P. A. Forsh
,
V. V. Kudryavtsev
,
A. V. Yakimanskiĭ
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 221 KB
Your tags:
english, 2008
21
A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices
N. A. Bekin
,
V. N. Shastin
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 232 KB
Your tags:
english, 2008
22
Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
V. N. Jmerik
,
A. M. Mizerov
,
T. V. Shubina
,
D. S. Plotnikov
,
M. V. Zamoryanskaya
,
M. A. Yagovkina
,
Ya. V. Domracheva
,
A. A. Sitnikova
,
S. V. Ivanov
Journal:
Semiconductors
Year:
2008
Language:
english
File:
PDF, 364 KB
Your tags:
english, 2008
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