Volume 42; Issue 5

Semiconductors

Volume 42; Issue 5
4

Extrinsic conductivity of Hg3In2Te6single crystals

Year:
2008
Language:
english
File:
PDF, 209 KB
english, 2008
11

Theoretical study of auger recombination processes in deep quantum wells

Year:
2008
Language:
english
File:
PDF, 215 KB
english, 2008
12

Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well

Year:
2008
Language:
english
File:
PDF, 198 KB
english, 2008
14

High-frequency properties of double-well nanostructures

Year:
2008
Language:
english
File:
PDF, 186 KB
english, 2008
16

Hysteresis of tunnel current inw-GaN/AlGaN(0001) double-barrier structures

Year:
2008
Language:
english
File:
PDF, 237 KB
english, 2008
19

Thermal instability of silicon fullerenes stabilized with hydrogen: Computer simulation

Year:
2008
Language:
english
File:
PDF, 215 KB
english, 2008
21

A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices

Year:
2008
Language:
english
File:
PDF, 232 KB
english, 2008